JPS6325700B2 - - Google Patents
Info
- Publication number
- JPS6325700B2 JPS6325700B2 JP56101088A JP10108881A JPS6325700B2 JP S6325700 B2 JPS6325700 B2 JP S6325700B2 JP 56101088 A JP56101088 A JP 56101088A JP 10108881 A JP10108881 A JP 10108881A JP S6325700 B2 JPS6325700 B2 JP S6325700B2
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- film
- glass film
- silicon
- impurities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10108881A JPS583225A (ja) | 1981-06-29 | 1981-06-29 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10108881A JPS583225A (ja) | 1981-06-29 | 1981-06-29 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS583225A JPS583225A (ja) | 1983-01-10 |
| JPS6325700B2 true JPS6325700B2 (enrdf_load_stackoverflow) | 1988-05-26 |
Family
ID=14291335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10108881A Granted JPS583225A (ja) | 1981-06-29 | 1981-06-29 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS583225A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02177535A (ja) * | 1988-12-28 | 1990-07-10 | Matsushita Electron Corp | 半導体装置の製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5512709A (en) * | 1978-07-12 | 1980-01-29 | Toshiba Corp | Manufactiring method of semiconductor device |
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1981
- 1981-06-29 JP JP10108881A patent/JPS583225A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS583225A (ja) | 1983-01-10 |