JPS5832072A - 窒化アルミニウム焼結体およびその製法並びに焼結体製造用粉末組成物 - Google Patents

窒化アルミニウム焼結体およびその製法並びに焼結体製造用粉末組成物

Info

Publication number
JPS5832072A
JPS5832072A JP56126771A JP12677181A JPS5832072A JP S5832072 A JPS5832072 A JP S5832072A JP 56126771 A JP56126771 A JP 56126771A JP 12677181 A JP12677181 A JP 12677181A JP S5832072 A JPS5832072 A JP S5832072A
Authority
JP
Japan
Prior art keywords
aluminum nitride
sintered body
lithium
nitride sintered
body according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56126771A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6337065B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
竹田　幸男
荻原　覚
康隆 鈴木
浦　満
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56126771A priority Critical patent/JPS5832072A/ja
Publication of JPS5832072A publication Critical patent/JPS5832072A/ja
Publication of JPS6337065B2 publication Critical patent/JPS6337065B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Ceramic Products (AREA)
JP56126771A 1981-08-14 1981-08-14 窒化アルミニウム焼結体およびその製法並びに焼結体製造用粉末組成物 Granted JPS5832072A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56126771A JPS5832072A (ja) 1981-08-14 1981-08-14 窒化アルミニウム焼結体およびその製法並びに焼結体製造用粉末組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56126771A JPS5832072A (ja) 1981-08-14 1981-08-14 窒化アルミニウム焼結体およびその製法並びに焼結体製造用粉末組成物

Publications (2)

Publication Number Publication Date
JPS5832072A true JPS5832072A (ja) 1983-02-24
JPS6337065B2 JPS6337065B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-07-22

Family

ID=14943514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56126771A Granted JPS5832072A (ja) 1981-08-14 1981-08-14 窒化アルミニウム焼結体およびその製法並びに焼結体製造用粉末組成物

Country Status (1)

Country Link
JP (1) JPS5832072A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4478785A (en) * 1983-08-01 1984-10-23 General Electric Company Process of pressureless sintering to produce dense, high thermal conductivity aluminum nitride ceramic body
US4533645A (en) * 1983-08-01 1985-08-06 General Electric Company High thermal conductivity aluminum nitride ceramic body
US4537863A (en) * 1983-08-10 1985-08-27 Nippon Electric Glass Company, Ltd. Low temperature sealing composition
US4547471A (en) * 1983-11-18 1985-10-15 General Electric Company High thermal conductivity aluminum nitride ceramic body
US4591537A (en) * 1982-12-24 1986-05-27 W. C. Heraeus Gmbh Combination of AlN-Y2 O3 heat conductive ceramic substrate and electronic component
US4627815A (en) * 1983-10-15 1986-12-09 W.C. Heraeus Gmbh Ceramic temperature stabilization body, and method of making same
US4843042A (en) * 1986-06-30 1989-06-27 General Electric Company Alkaline earth fluoride additive for sintering aluminum nitride
JPH0352435U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1989-09-27 1991-05-21
JPH04101789U (ja) * 1991-02-12 1992-09-02 川崎重工業株式会社 二輪車のフロントブレーキ構造
JPH07165473A (ja) * 1994-10-24 1995-06-27 Toshiba Corp 半導体装置
US6664597B2 (en) 2000-12-26 2003-12-16 Canon Kabushiki Kaisha Substrate for mounting a semiconductor element thereon and semiconductor device comprising a semiconductor element mounted on said substrate

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4591537A (en) * 1982-12-24 1986-05-27 W. C. Heraeus Gmbh Combination of AlN-Y2 O3 heat conductive ceramic substrate and electronic component
US4478785A (en) * 1983-08-01 1984-10-23 General Electric Company Process of pressureless sintering to produce dense, high thermal conductivity aluminum nitride ceramic body
US4533645A (en) * 1983-08-01 1985-08-06 General Electric Company High thermal conductivity aluminum nitride ceramic body
US4537863A (en) * 1983-08-10 1985-08-27 Nippon Electric Glass Company, Ltd. Low temperature sealing composition
US4627815A (en) * 1983-10-15 1986-12-09 W.C. Heraeus Gmbh Ceramic temperature stabilization body, and method of making same
US4547471A (en) * 1983-11-18 1985-10-15 General Electric Company High thermal conductivity aluminum nitride ceramic body
US4843042A (en) * 1986-06-30 1989-06-27 General Electric Company Alkaline earth fluoride additive for sintering aluminum nitride
JPH0352435U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1989-09-27 1991-05-21
JPH04101789U (ja) * 1991-02-12 1992-09-02 川崎重工業株式会社 二輪車のフロントブレーキ構造
JPH07165473A (ja) * 1994-10-24 1995-06-27 Toshiba Corp 半導体装置
US6664597B2 (en) 2000-12-26 2003-12-16 Canon Kabushiki Kaisha Substrate for mounting a semiconductor element thereon and semiconductor device comprising a semiconductor element mounted on said substrate

Also Published As

Publication number Publication date
JPS6337065B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-07-22

Similar Documents

Publication Publication Date Title
US4540673A (en) Sintered aluminum nitride and semi-conductor device using the same
US4571610A (en) Semiconductor device having electrically insulating substrate of SiC
US4672046A (en) Sintered aluminum nitride body
WO2000076940A1 (en) Composite material and semiconductor device using the same
JPS5832072A (ja) 窒化アルミニウム焼結体およびその製法並びに焼結体製造用粉末組成物
JPS6353151B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6331434B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS5969473A (ja) 電気絶縁性焼結材用炭化けい素粉末組成物
JPH0470776B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS63295479A (ja) 窒化アルミニウム焼結体およびその製造方法
JPS61146764A (ja) 窒化アルミニウム焼結体およびその製造方法
JPS5815953B2 (ja) 電気的装置用基板
JPH01188472A (ja) 窒化アルミニウム焼結体の製造方法
JPH0247856B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS61261270A (ja) 窒化アルミニウム焼結体の製造方法
JPH0522670B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS61286267A (ja) 窒化アルミニウム質焼結体の製造方法
JPS6330372A (ja) 窒化アルミニウム焼結体の製法
JPH04182358A (ja) 窒化アルミニウム質焼結体の製造方法
JP2851712B2 (ja) 窒化アルミニウム質回路基板
JPS60255677A (ja) 窒化アルミニウム焼結体の製造方法
JPS593436B2 (ja) 焼結用炭火ケイ素粉末組成物
JPS63218585A (ja) 高熱伝導性窒化アルミニウム焼結体とその製造方法
JPS62275069A (ja) ＡｌＮ系セラミツクスの製造方法
JPS61232274A (ja) 窒化アルミニウム焼結体の製造方法