JPS5830101A - Ａｌの陽極酸化薄膜を用いた湿度センサ−素子の製造方法 - Google Patents
Ａｌの陽極酸化薄膜を用いた湿度センサ−素子の製造方法Info
- Publication number
- JPS5830101A JPS5830101A JP56128170A JP12817081A JPS5830101A JP S5830101 A JPS5830101 A JP S5830101A JP 56128170 A JP56128170 A JP 56128170A JP 12817081 A JP12817081 A JP 12817081A JP S5830101 A JPS5830101 A JP S5830101A
- Authority
- JP
- Japan
- Prior art keywords
- sensor element
- thin film
- humidity sensor
- manufacturing
- humidity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 20
- 238000000034 method Methods 0.000 title claims description 16
- 229910052782 aluminium Inorganic materials 0.000 title description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title description 3
- 238000004519 manufacturing process Methods 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000004094 surface-active agent Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000010407 anodic oxide Substances 0.000 claims description 3
- 239000002736 nonionic surfactant Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 14
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000006872 improvement Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000012190 activator Substances 0.000 description 4
- 238000007743 anodising Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910001593 boehmite Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- -1 polyoxyethylene Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Non-Adjustable Resistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56128170A JPS5830101A (ja) | 1981-08-18 | 1981-08-18 | Ａｌの陽極酸化薄膜を用いた湿度センサ−素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56128170A JPS5830101A (ja) | 1981-08-18 | 1981-08-18 | Ａｌの陽極酸化薄膜を用いた湿度センサ−素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5830101A true JPS5830101A (ja) | 1983-02-22 |
| JPS6328481B2 JPS6328481B2 (enrdf_load_stackoverflow) | 1988-06-08 |
Family
ID=14978128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56128170A Granted JPS5830101A (ja) | 1981-08-18 | 1981-08-18 | Ａｌの陽極酸化薄膜を用いた湿度センサ−素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5830101A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61178123A (ja) * | 1985-01-30 | 1986-08-09 | Inoue Japax Res Inc | 穴明放電加工装置 |
| JPS62124828A (ja) * | 1985-11-25 | 1987-06-06 | Mitsubishi Electric Corp | 細穴放電加工装置 |
| CN107257923A (zh) * | 2015-02-27 | 2017-10-17 | Em微电子-马林有限公司 | 具有热模块的湿度传感器 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0410870U (enrdf_load_stackoverflow) * | 1990-05-18 | 1992-01-29 |
-
1981
- 1981-08-18 JP JP56128170A patent/JPS5830101A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61178123A (ja) * | 1985-01-30 | 1986-08-09 | Inoue Japax Res Inc | 穴明放電加工装置 |
| JPS62124828A (ja) * | 1985-11-25 | 1987-06-06 | Mitsubishi Electric Corp | 細穴放電加工装置 |
| CN107257923A (zh) * | 2015-02-27 | 2017-10-17 | Em微电子-马林有限公司 | 具有热模块的湿度传感器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6328481B2 (enrdf_load_stackoverflow) | 1988-06-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS58220457A (ja) | 誘電体材料の形成方法 | |
| TW533440B (en) | Method for forming titanium oxide film and titanium electrolytic capacitor | |
| JPS623976B2 (enrdf_load_stackoverflow) | ||
| JPS5830101A (ja) | Ａｌの陽極酸化薄膜を用いた湿度センサ−素子の製造方法 | |
| US3397446A (en) | Thin film capacitors employing semiconductive oxide electrolytes | |
| US3861031A (en) | Method of making a moisture-sensitive element | |
| JPH0244022B2 (enrdf_load_stackoverflow) | ||
| JPS646521B2 (enrdf_load_stackoverflow) | ||
| JPH0239417A (ja) | 電解コンデンサの製造方法 | |
| JPH0244023B2 (ja) | Alnoyokyokusankahakumakuomochiitashitsudosensasoshioyobisonoseizohoho | |
| JPS5858805B2 (ja) | 固体電解コンデンサの製造方法 | |
| JPH0147740B2 (enrdf_load_stackoverflow) | ||
| JP3048089B2 (ja) | シリコン単結晶ウェーハの処理方法 | |
| JP2001152202A (ja) | 耐酸化性が優れたニッケル粉とその製造方法 | |
| JP3416716B2 (ja) | 半導体基板表面の酸化膜の形成処理方法 | |
| JPH0722078B2 (ja) | 固体電解コンデンサの製造法 | |
| JP2516121B2 (ja) | 金属と固体電解質との接合方法 | |
| KR930001853B1 (ko) | 2층 질화막 구조를 이용한 고유전박막 제조방법 | |
| JPS5942966B2 (ja) | 薄膜コンデンサの製造方法 | |
| JPS6151263B2 (enrdf_load_stackoverflow) | ||
| JPS62124728A (ja) | 固体電解コンデンサの製造方法 | |
| JPS6066144A (ja) | 酸素濃度検出器用素子の電極の製造方法 | |
| JPH0433130B2 (enrdf_load_stackoverflow) | ||
| JPS58147023A (ja) | 固体電解コンデンサの製造方法 | |
| JPH01309334A (ja) | 半導体装置の製造方法 |