JPS5828875A - 半導体集積回路装置 - Google Patents
半導体集積回路装置Info
- Publication number
- JPS5828875A JPS5828875A JP56127042A JP12704281A JPS5828875A JP S5828875 A JPS5828875 A JP S5828875A JP 56127042 A JP56127042 A JP 56127042A JP 12704281 A JP12704281 A JP 12704281A JP S5828875 A JPS5828875 A JP S5828875A
- Authority
- JP
- Japan
- Prior art keywords
- transistors
- memory
- writing
- transistor
- memory transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 230000005669 field effect Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 abstract description 3
- 239000011159 matrix material Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 239000002356 single layer Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 2
- 241000828585 Gari Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- JTJMJGYZQZDUJJ-UHFFFAOYSA-N phencyclidine Chemical compound C1CCCCN1C1(C=2C=CC=CC=2)CCCCC1 JTJMJGYZQZDUJJ-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56127042A JPS5828875A (ja) | 1981-08-13 | 1981-08-13 | 半導体集積回路装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56127042A JPS5828875A (ja) | 1981-08-13 | 1981-08-13 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5828875A true JPS5828875A (ja) | 1983-02-19 |
JPH0137854B2 JPH0137854B2 (enrdf_load_stackoverflow) | 1989-08-09 |
Family
ID=14950181
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56127042A Granted JPS5828875A (ja) | 1981-08-13 | 1981-08-13 | 半導体集積回路装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5828875A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6260266A (ja) * | 1985-09-10 | 1987-03-16 | Toshiba Corp | 不揮発性半導体記憶装置 |
US5097444A (en) * | 1989-11-29 | 1992-03-17 | Rohm Corporation | Tunnel EEPROM with overerase protection |
US5467310A (en) * | 1991-01-16 | 1995-11-14 | Fujitsu Limited | EEPROM and EEPROM reading method |
WO2002037502A3 (en) * | 2000-10-30 | 2003-09-25 | Virtual Silicon Technology Inc | Common source eeprom and flash memory |
-
1981
- 1981-08-13 JP JP56127042A patent/JPS5828875A/ja active Granted
Non-Patent Citations (1)
Title |
---|
SOLID STATE ELECTRONICS=1978 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6260266A (ja) * | 1985-09-10 | 1987-03-16 | Toshiba Corp | 不揮発性半導体記憶装置 |
US5097444A (en) * | 1989-11-29 | 1992-03-17 | Rohm Corporation | Tunnel EEPROM with overerase protection |
US5467310A (en) * | 1991-01-16 | 1995-11-14 | Fujitsu Limited | EEPROM and EEPROM reading method |
WO2002037502A3 (en) * | 2000-10-30 | 2003-09-25 | Virtual Silicon Technology Inc | Common source eeprom and flash memory |
Also Published As
Publication number | Publication date |
---|---|
JPH0137854B2 (enrdf_load_stackoverflow) | 1989-08-09 |
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