JPS5826095A - 単結晶シリコン引上装置 - Google Patents
単結晶シリコン引上装置Info
- Publication number
- JPS5826095A JPS5826095A JP12015481A JP12015481A JPS5826095A JP S5826095 A JPS5826095 A JP S5826095A JP 12015481 A JP12015481 A JP 12015481A JP 12015481 A JP12015481 A JP 12015481A JP S5826095 A JPS5826095 A JP S5826095A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- pulling
- inert gas
- crystal silicon
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 41
- 239000011261 inert gas Substances 0.000 claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000155 melt Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 19
- 239000013078 crystal Substances 0.000 abstract description 17
- 239000010453 quartz Substances 0.000 abstract description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 230000001012 protector Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 101150027068 DEGS1 gene Proteins 0.000 description 1
- 241000600169 Maro Species 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 235000012745 brilliant blue FCF Nutrition 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 101150093826 par1 gene Proteins 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12015481A JPS5826095A (ja) | 1981-07-31 | 1981-07-31 | 単結晶シリコン引上装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12015481A JPS5826095A (ja) | 1981-07-31 | 1981-07-31 | 単結晶シリコン引上装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5826095A true JPS5826095A (ja) | 1983-02-16 |
| JPH021117B2 JPH021117B2 (enrdf_load_stackoverflow) | 1990-01-10 |
Family
ID=14779288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12015481A Granted JPS5826095A (ja) | 1981-07-31 | 1981-07-31 | 単結晶シリコン引上装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5826095A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61111990A (ja) * | 1984-11-05 | 1986-05-30 | Kokusai Electric Co Ltd | 単結晶引上装置 |
| JPS61122184A (ja) * | 1984-11-15 | 1986-06-10 | Kokusai Electric Co Ltd | 単結晶引上げ装置におけるガス吹出し方法 |
| WO2002027077A1 (fr) * | 2000-09-26 | 2002-04-04 | Shin-Etsu Handotai Co.,Ltd. | Procede de fabrication d'un monocristal en silicium et dispositif de fabrication d'un monocristal semiconducteur |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5177064A (ja) * | 1974-12-27 | 1976-07-03 | Shinetsu Handotai Kk | Handotaitanketsushohikiagesochiniokeru geetobarubu |
| JPS57180759U (enrdf_load_stackoverflow) * | 1981-05-06 | 1982-11-16 |
-
1981
- 1981-07-31 JP JP12015481A patent/JPS5826095A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5177064A (ja) * | 1974-12-27 | 1976-07-03 | Shinetsu Handotai Kk | Handotaitanketsushohikiagesochiniokeru geetobarubu |
| JPS57180759U (enrdf_load_stackoverflow) * | 1981-05-06 | 1982-11-16 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61111990A (ja) * | 1984-11-05 | 1986-05-30 | Kokusai Electric Co Ltd | 単結晶引上装置 |
| JPS61122184A (ja) * | 1984-11-15 | 1986-06-10 | Kokusai Electric Co Ltd | 単結晶引上げ装置におけるガス吹出し方法 |
| WO2002027077A1 (fr) * | 2000-09-26 | 2002-04-04 | Shin-Etsu Handotai Co.,Ltd. | Procede de fabrication d'un monocristal en silicium et dispositif de fabrication d'un monocristal semiconducteur |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH021117B2 (enrdf_load_stackoverflow) | 1990-01-10 |
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