JPH0535119B2 - - Google Patents
Info
- Publication number
- JPH0535119B2 JPH0535119B2 JP61058281A JP5828186A JPH0535119B2 JP H0535119 B2 JPH0535119 B2 JP H0535119B2 JP 61058281 A JP61058281 A JP 61058281A JP 5828186 A JP5828186 A JP 5828186A JP H0535119 B2 JPH0535119 B2 JP H0535119B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal growth
- heating element
- growth chamber
- container
- graphite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5828186A JPS62216990A (ja) | 1986-03-18 | 1986-03-18 | 単結晶成長装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5828186A JPS62216990A (ja) | 1986-03-18 | 1986-03-18 | 単結晶成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62216990A JPS62216990A (ja) | 1987-09-24 |
JPH0535119B2 true JPH0535119B2 (enrdf_load_stackoverflow) | 1993-05-25 |
Family
ID=13079802
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5828186A Granted JPS62216990A (ja) | 1986-03-18 | 1986-03-18 | 単結晶成長装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62216990A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1994028206A1 (fr) * | 1993-05-31 | 1994-12-08 | Sumitomo Sitix Corporation | Appareil et procede de production d'une matiere monocristalline |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2614095B2 (ja) * | 1988-12-26 | 1997-05-28 | 信越半導体 株式会社 | 単結晶棒の引上げ装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53142386A (en) * | 1977-05-18 | 1978-12-12 | Toshiba Ceramics Co | Low carbon silicon single crystal manufacturing apparatus |
JPS5930792A (ja) * | 1982-08-10 | 1984-02-18 | Toshiba Corp | 単結晶育成装置 |
JPS60131892A (ja) * | 1983-12-19 | 1985-07-13 | Mitsubishi Monsanto Chem Co | 単結晶育成装置 |
-
1986
- 1986-03-18 JP JP5828186A patent/JPS62216990A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1994028206A1 (fr) * | 1993-05-31 | 1994-12-08 | Sumitomo Sitix Corporation | Appareil et procede de production d'une matiere monocristalline |
Also Published As
Publication number | Publication date |
---|---|
JPS62216990A (ja) | 1987-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3491402B2 (ja) | 単結晶製造方法及びその単結晶製造装置 | |
US5016567A (en) | Apparatus for treatment using gas | |
JPS612321A (ja) | 垂直ホツトウオール型cvdリアクタ | |
US6402836B1 (en) | Method for epitaxial growth on a substrate | |
US4664742A (en) | Method for growing single crystals of dissociative compounds | |
JPH0535119B2 (enrdf_load_stackoverflow) | ||
JPS61247683A (ja) | 単結晶サフアイヤ引上装置 | |
JPS5918360B2 (ja) | ガドリニウムガ−ネツトを製造する為の方法 | |
JP2517803B2 (ja) | Ii−vi族化合物半導体多結晶の合成方法 | |
JP2520924B2 (ja) | 単結晶引上装置 | |
JPS61158890A (ja) | 結晶成長装置 | |
JPH021117B2 (enrdf_load_stackoverflow) | ||
KR0157365B1 (ko) | 실리콘 단결정 성장노내의 가스 흐름을 원활하게 하기 위한 방법 및 이를 실현하기 위한 장치 | |
JP2733898B2 (ja) | 化合物半導体単結晶の製造方法 | |
KR0134033B1 (ko) | 처리장치 | |
JPH06124909A (ja) | 縦型熱処理装置 | |
JP2002234792A (ja) | 単結晶製造方法 | |
JPH0840796A (ja) | 単結晶シリコン製造装置 | |
JPH0214898A (ja) | シリコン単結晶製造装置 | |
JP2726887B2 (ja) | 化合物半導体単結晶の製造方法 | |
JPH0234909A (ja) | 化合物半導体気相成長方法および装置 | |
JP2831813B2 (ja) | 半導体気相成長装置 | |
KR930005406B1 (ko) | 단결정체의 성장방법과 장치 | |
JPS61245539A (ja) | 化学気相成長装置 | |
JP3392245B2 (ja) | 化合物半導体単結晶の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |