JPS62216990A - 単結晶成長装置 - Google Patents
単結晶成長装置Info
- Publication number
- JPS62216990A JPS62216990A JP5828186A JP5828186A JPS62216990A JP S62216990 A JPS62216990 A JP S62216990A JP 5828186 A JP5828186 A JP 5828186A JP 5828186 A JP5828186 A JP 5828186A JP S62216990 A JPS62216990 A JP S62216990A
- Authority
- JP
- Japan
- Prior art keywords
- crystal growth
- heating element
- chamber
- growth chamber
- partition wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 59
- 238000010438 heat treatment Methods 0.000 claims abstract description 37
- 238000005192 partition Methods 0.000 claims abstract description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 21
- 229910002804 graphite Inorganic materials 0.000 claims description 21
- 239000010439 graphite Substances 0.000 claims description 21
- 230000002265 prevention Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 30
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 230000002411 adverse Effects 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000012535 impurity Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000007770 graphite material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5828186A JPS62216990A (ja) | 1986-03-18 | 1986-03-18 | 単結晶成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5828186A JPS62216990A (ja) | 1986-03-18 | 1986-03-18 | 単結晶成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62216990A true JPS62216990A (ja) | 1987-09-24 |
| JPH0535119B2 JPH0535119B2 (enrdf_load_stackoverflow) | 1993-05-25 |
Family
ID=13079802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5828186A Granted JPS62216990A (ja) | 1986-03-18 | 1986-03-18 | 単結晶成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62216990A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02172884A (ja) * | 1988-12-26 | 1990-07-04 | Shin Etsu Handotai Co Ltd | 単結晶棒の引上げ装置 |
| US5730799A (en) * | 1993-05-31 | 1998-03-24 | Sumitomo Sitix Corporation | Device for producing single crystals |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53142386A (en) * | 1977-05-18 | 1978-12-12 | Toshiba Ceramics Co | Low carbon silicon single crystal manufacturing apparatus |
| JPS5930792A (ja) * | 1982-08-10 | 1984-02-18 | Toshiba Corp | 単結晶育成装置 |
| JPS60131892A (ja) * | 1983-12-19 | 1985-07-13 | Mitsubishi Monsanto Chem Co | 単結晶育成装置 |
-
1986
- 1986-03-18 JP JP5828186A patent/JPS62216990A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53142386A (en) * | 1977-05-18 | 1978-12-12 | Toshiba Ceramics Co | Low carbon silicon single crystal manufacturing apparatus |
| JPS5930792A (ja) * | 1982-08-10 | 1984-02-18 | Toshiba Corp | 単結晶育成装置 |
| JPS60131892A (ja) * | 1983-12-19 | 1985-07-13 | Mitsubishi Monsanto Chem Co | 単結晶育成装置 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02172884A (ja) * | 1988-12-26 | 1990-07-04 | Shin Etsu Handotai Co Ltd | 単結晶棒の引上げ装置 |
| US5730799A (en) * | 1993-05-31 | 1998-03-24 | Sumitomo Sitix Corporation | Device for producing single crystals |
| US5925147A (en) * | 1993-05-31 | 1999-07-20 | Sumitomo Sitix Corporation | Process for producing single crystals |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0535119B2 (enrdf_load_stackoverflow) | 1993-05-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |