JPS5825222A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5825222A
JPS5825222A JP57087879A JP8787982A JPS5825222A JP S5825222 A JPS5825222 A JP S5825222A JP 57087879 A JP57087879 A JP 57087879A JP 8787982 A JP8787982 A JP 8787982A JP S5825222 A JPS5825222 A JP S5825222A
Authority
JP
Japan
Prior art keywords
film
single crystal
substrate
polycrystalline
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57087879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS643047B2 (enExample
Inventor
Hiroyuki Tango
丹呉　浩侑
Yoshihisa Mizutani
水谷　嘉久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57087879A priority Critical patent/JPS5825222A/ja
Publication of JPS5825222A publication Critical patent/JPS5825222A/ja
Publication of JPS643047B2 publication Critical patent/JPS643047B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam

Landscapes

  • Recrystallisation Techniques (AREA)
JP57087879A 1982-05-26 1982-05-26 半導体装置の製造方法 Granted JPS5825222A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57087879A JPS5825222A (ja) 1982-05-26 1982-05-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57087879A JPS5825222A (ja) 1982-05-26 1982-05-26 半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP14327079A Division JPS5667923A (en) 1979-11-07 1979-11-07 Preparation method of semiconductor system

Publications (2)

Publication Number Publication Date
JPS5825222A true JPS5825222A (ja) 1983-02-15
JPS643047B2 JPS643047B2 (enExample) 1989-01-19

Family

ID=13927146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57087879A Granted JPS5825222A (ja) 1982-05-26 1982-05-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5825222A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6336515A (ja) * 1986-07-30 1988-02-17 Sony Corp 半導体単結晶薄膜の製造方法
JPS6445975A (en) * 1987-08-12 1989-02-20 Nippon Kokan Kk Cavitation detecting device for pump

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6336515A (ja) * 1986-07-30 1988-02-17 Sony Corp 半導体単結晶薄膜の製造方法
JPS6445975A (en) * 1987-08-12 1989-02-20 Nippon Kokan Kk Cavitation detecting device for pump

Also Published As

Publication number Publication date
JPS643047B2 (enExample) 1989-01-19

Similar Documents

Publication Publication Date Title
JPS5893221A (ja) 半導体薄膜構造とその製造方法
JPH0629320A (ja) 薄膜トランジスタの製造方法
JPS643045B2 (enExample)
JPS58116764A (ja) 半導体装置の製造方法
JPS5825222A (ja) 半導体装置の製造方法
JPS643046B2 (enExample)
JP2687393B2 (ja) 半導体装置の製造方法
JPS5885520A (ja) 半導体装置の製造方法
JPH0467336B2 (enExample)
JPS6342417B2 (enExample)
JPS5825271A (ja) 半導体装置の製造方法
JPS63283013A (ja) 多結晶シリコン薄膜の形成方法
JPS62202559A (ja) 半導体装置及びその製造方法
JPH0231468A (ja) 浮遊ゲート型半導体記憶装置の製造方法
JPH0810669B2 (ja) Ｓｏｉ膜の形成方法
JPH0284716A (ja) 半導体素子とその製造方法
JPH0235710A (ja) 薄膜半導体層の形成方法
JPS5837952A (ja) 半導体装置およびその製造方法
JPS628572A (ja) 半導体層の形成方法
JPS58180019A (ja) 半導体基体およびその製造方法
JPS5893224A (ja) 半導体単結晶膜の製造方法
JPS6151874A (ja) Ｓｏｉ−ｍｏｓの製造方法
JPS6028223A (ja) 半導体結晶薄膜の製造方法
JPH0243331B2 (enExample)
JPH0799742B2 (ja) 半導体装置の製造方法