JPS58222527A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58222527A
JPS58222527A JP10382782A JP10382782A JPS58222527A JP S58222527 A JPS58222527 A JP S58222527A JP 10382782 A JP10382782 A JP 10382782A JP 10382782 A JP10382782 A JP 10382782A JP S58222527 A JPS58222527 A JP S58222527A
Authority
JP
Japan
Prior art keywords
section
polycrystalline silicon
silicon film
impurity concentration
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10382782A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0416939B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Tamura
博 田村
Kunihiro Yagi
矢木　邦博
Tatsumi Mizutani
水谷　巽
Minoru Wada
稔 和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10382782A priority Critical patent/JPS58222527A/ja
Publication of JPS58222527A publication Critical patent/JPS58222527A/ja
Publication of JPH0416939B2 publication Critical patent/JPH0416939B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
JP10382782A 1982-06-18 1982-06-18 半導体装置の製造方法 Granted JPS58222527A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10382782A JPS58222527A (ja) 1982-06-18 1982-06-18 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10382782A JPS58222527A (ja) 1982-06-18 1982-06-18 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58222527A true JPS58222527A (ja) 1983-12-24
JPH0416939B2 JPH0416939B2 (enrdf_load_stackoverflow) 1992-03-25

Family

ID=14364244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10382782A Granted JPS58222527A (ja) 1982-06-18 1982-06-18 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58222527A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1279927A3 (fr) * 2001-07-03 2016-07-20 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Procédés de fabrication d'un dispositif piézorésistif

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1279927A3 (fr) * 2001-07-03 2016-07-20 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Procédés de fabrication d'un dispositif piézorésistif

Also Published As

Publication number Publication date
JPH0416939B2 (enrdf_load_stackoverflow) 1992-03-25

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