JPS58220574A - 固体撮像装置 - Google Patents

固体撮像装置

Info

Publication number
JPS58220574A
JPS58220574A JP57104319A JP10431982A JPS58220574A JP S58220574 A JPS58220574 A JP S58220574A JP 57104319 A JP57104319 A JP 57104319A JP 10431982 A JP10431982 A JP 10431982A JP S58220574 A JPS58220574 A JP S58220574A
Authority
JP
Japan
Prior art keywords
type
output
gate
solid
state imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57104319A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0412068B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Masaharu Imai
今井　正晴
Osamu Onizuka
修 鬼塚
Ikuo Toufukuji
東福寺　幾夫
Akimasa Morita
晃正 森田
Shunpei Tanaka
俊平 田中
Hiroshi Matsui
宏 松井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Corp
Olympus Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Corp, Olympus Optical Co Ltd filed Critical Olympus Corp
Priority to JP57104319A priority Critical patent/JPS58220574A/ja
Priority to US06/500,303 priority patent/US4611221A/en
Publication of JPS58220574A publication Critical patent/JPS58220574A/ja
Publication of JPH0412068B2 publication Critical patent/JPH0412068B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454—Output structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP57104319A 1982-06-17 1982-06-17 固体撮像装置 Granted JPS58220574A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57104319A JPS58220574A (ja) 1982-06-17 1982-06-17 固体撮像装置
US06/500,303 US4611221A (en) 1982-06-17 1983-06-02 Solid state image pick-up device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57104319A JPS58220574A (ja) 1982-06-17 1982-06-17 固体撮像装置

Publications (2)

Publication Number Publication Date
JPS58220574A true JPS58220574A (ja) 1983-12-22
JPH0412068B2 JPH0412068B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-03-03

Family

ID=14377609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57104319A Granted JPS58220574A (ja) 1982-06-17 1982-06-17 固体撮像装置

Country Status (2)

Country Link
US (1) US4611221A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS58220574A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS615680A (ja) * 1984-06-20 1986-01-11 Hitachi Ltd 固体撮像装置
JPS6146680A (ja) * 1984-08-10 1986-03-06 Shoichi Tanaka 電荷検出回路
JP2007278760A (ja) * 2006-04-04 2007-10-25 Toyohashi Univ Of Technology 化学・物理現象検出装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442992A (en) * 1987-08-08 1989-02-15 Olympus Optical Co Solid-state image pickup device
JP2727584B2 (ja) * 1988-09-20 1998-03-11 ソニー株式会社 固体撮像装置
JP3036175B2 (ja) * 1991-11-11 2000-04-24 日本電気株式会社 電荷転送装置
US5563429A (en) * 1994-06-14 1996-10-08 Nikon Corp. Solid state imaging device
US5712498A (en) * 1996-08-26 1998-01-27 Massachusetts Institute Of Technology Charge modulation device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3721839A (en) * 1971-03-24 1973-03-20 Philips Corp Solid state imaging device with fet sensor
US3886582A (en) * 1972-04-05 1975-05-27 Sony Corp Field effect transistor
NL7308240A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-06-14 1974-12-17
US4427990A (en) * 1978-07-14 1984-01-24 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor photo-electric converter with insulated gate over p-n charge storage region

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS615680A (ja) * 1984-06-20 1986-01-11 Hitachi Ltd 固体撮像装置
JPS6146680A (ja) * 1984-08-10 1986-03-06 Shoichi Tanaka 電荷検出回路
JP2007278760A (ja) * 2006-04-04 2007-10-25 Toyohashi Univ Of Technology 化学・物理現象検出装置

Also Published As

Publication number Publication date
JPH0412068B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-03-03
US4611221A (en) 1986-09-09

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