JPS58212156A - 半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置の製造方法

Info

Publication number
JPS58212156A
JPS58212156A JP57095332A JP9533282A JPS58212156A JP S58212156 A JPS58212156 A JP S58212156A JP 57095332 A JP57095332 A JP 57095332A JP 9533282 A JP9533282 A JP 9533282A JP S58212156 A JPS58212156 A JP S58212156A
Authority
JP
Japan
Prior art keywords
region
transistor
base
type
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57095332A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6334627B2 (enExample
Inventor
Toyoki Takemoto
竹本　豊樹
Haruyasu Yamada
山田　晴保
Tadanaka Yoneda
米田　忠央
Tsutomu Fujita
勉 藤田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57095332A priority Critical patent/JPS58212156A/ja
Priority to EP83103726A priority patent/EP0093304B1/en
Priority to DE8383103726T priority patent/DE3361832D1/de
Publication of JPS58212156A publication Critical patent/JPS58212156A/ja
Priority to US07/124,423 priority patent/US4826780A/en
Publication of JPS6334627B2 publication Critical patent/JPS6334627B2/ja
Priority to US07/295,380 priority patent/US5066602A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/658—Integrated injection logic integrated in combination with analog structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP57095332A 1982-04-19 1982-06-02 半導体集積回路装置の製造方法 Granted JPS58212156A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP57095332A JPS58212156A (ja) 1982-06-02 1982-06-02 半導体集積回路装置の製造方法
EP83103726A EP0093304B1 (en) 1982-04-19 1983-04-18 Semiconductor ic and method of making the same
DE8383103726T DE3361832D1 (en) 1982-04-19 1983-04-18 Semiconductor ic and method of making the same
US07/124,423 US4826780A (en) 1982-04-19 1987-11-23 Method of making bipolar transistors
US07/295,380 US5066602A (en) 1982-04-19 1989-01-10 Method of making semiconductor ic including polar transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57095332A JPS58212156A (ja) 1982-06-02 1982-06-02 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58212156A true JPS58212156A (ja) 1983-12-09
JPS6334627B2 JPS6334627B2 (enExample) 1988-07-11

Family

ID=14134758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57095332A Granted JPS58212156A (ja) 1982-04-19 1982-06-02 半導体集積回路装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58212156A (enExample)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515973A (enExample) * 1974-07-04 1976-01-19 Nippon Electric Co
JPS53134374A (en) * 1977-04-28 1978-11-22 Sony Corp Semiconductor device
JPS56126960A (en) * 1980-03-11 1981-10-05 Nec Corp Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515973A (enExample) * 1974-07-04 1976-01-19 Nippon Electric Co
JPS53134374A (en) * 1977-04-28 1978-11-22 Sony Corp Semiconductor device
JPS56126960A (en) * 1980-03-11 1981-10-05 Nec Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6334627B2 (enExample) 1988-07-11

Similar Documents

Publication Publication Date Title
JPS6322070B2 (enExample)
US20130207236A1 (en) High-beta bipolar junction transistor and method of manufacture
JPH0526342B2 (enExample)
JP3128808B2 (ja) 半導体装置
JPS58212159A (ja) 半導体集積回路装置の製造方法
JPS58212158A (ja) 半導体集積回路装置の製造方法
JPS58182260A (ja) 半導体集積回路装置
JPS6334627B2 (enExample)
JPH05299591A (ja) 半導体集積回路装置およびその製造方法
JPS58212157A (ja) 半導体集積回路装置の製造方法
JP3150420B2 (ja) バイポーラ集積回路とその製造方法
JP2764988B2 (ja) 半導体装置
JP2604793B2 (ja) 半導体装置
JP3977201B2 (ja) 半導体装置
JP2558472B2 (ja) 半導体集積回路
JPH0499387A (ja) 半導体集積回路
JPS6347965A (ja) 半導体集積回路
JPS63232370A (ja) 半導体装置およびその製造方法
JPH0451067B2 (enExample)
JPH0256935A (ja) 半導体集積回路装置
JPH06151733A (ja) バイポーラ型半導体装置およびその製造方法
JPH0555494A (ja) 高耐圧ｍｏｓｉｃ
JPS60776B2 (ja) 半導体装置
JPS63136660A (ja) 半導体装置とその製造法
JPS60136250A (ja) 半導体集積回路装置