JPS58210658A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JPS58210658A
JPS58210658A JP57093345A JP9334582A JPS58210658A JP S58210658 A JPS58210658 A JP S58210658A JP 57093345 A JP57093345 A JP 57093345A JP 9334582 A JP9334582 A JP 9334582A JP S58210658 A JPS58210658 A JP S58210658A
Authority
JP
Japan
Prior art keywords
region
island
type
conductivity type
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57093345A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0425704B2 (enrdf_load_stackoverflow
Inventor
Teruo Tabata
田端　輝夫
Tetsuo Asano
哲郎 浅野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP57093345A priority Critical patent/JPS58210658A/ja
Publication of JPS58210658A publication Critical patent/JPS58210658A/ja
Publication of JPH0425704B2 publication Critical patent/JPH0425704B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP57093345A 1982-05-31 1982-05-31 半導体集積回路 Granted JPS58210658A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57093345A JPS58210658A (ja) 1982-05-31 1982-05-31 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57093345A JPS58210658A (ja) 1982-05-31 1982-05-31 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS58210658A true JPS58210658A (ja) 1983-12-07
JPH0425704B2 JPH0425704B2 (enrdf_load_stackoverflow) 1992-05-01

Family

ID=14079674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57093345A Granted JPS58210658A (ja) 1982-05-31 1982-05-31 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS58210658A (enrdf_load_stackoverflow)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5399783A (en) * 1977-02-10 1978-08-31 Hewlett Packard Yokogawa Ic with schottky barrier diode
JPS5433681A (en) * 1977-08-22 1979-03-12 Hitachi Ltd Semiconductor integrated circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5399783A (en) * 1977-02-10 1978-08-31 Hewlett Packard Yokogawa Ic with schottky barrier diode
JPS5433681A (en) * 1977-08-22 1979-03-12 Hitachi Ltd Semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPH0425704B2 (enrdf_load_stackoverflow) 1992-05-01

Similar Documents

Publication Publication Date Title
US5798560A (en) Semiconductor integrated circuit having a spark killer diode
JPS6142862U (ja) 縦形ｐｎｐトランジスタを含む集積回路
JP2635044B2 (ja) 半導体デバイス
JPS58210658A (ja) 半導体集積回路
JP3459532B2 (ja) 半導体集積回路およびその製造方法
JP3018417B2 (ja) 集積回路用保護装置
JP3883681B2 (ja) 半導体集積回路
JPH0440272Y2 (enrdf_load_stackoverflow)
JPH0475371A (ja) 半導体集積回路
JPH0440273Y2 (enrdf_load_stackoverflow)
JPS58210635A (ja) 半導体集積回路
JPS61185979A (ja) 集積型光電変換素子
JPS6364058B2 (enrdf_load_stackoverflow)
JP2777054B2 (ja) 半導体装置
JPS58213446A (ja) 半導体集積回路
JPS5933848A (ja) 半導体集積回路
JPS58225647A (ja) 半導体集積回路
JP3135615B2 (ja) 半導体装置及びその製造方法
JPH0337739B2 (enrdf_load_stackoverflow)
JPS6045051A (ja) 半導体集積回路
JPH09116021A (ja) 半導体集積回路とその製造方法
JPS6239830B2 (enrdf_load_stackoverflow)
JPH0322693B2 (enrdf_load_stackoverflow)
JPS61150383A (ja) 半導体装置
JPS59108349A (ja) 縦方向トランジスタ