JPS58207009A - 回折格子の製造方法 - Google Patents
回折格子の製造方法Info
- Publication number
- JPS58207009A JPS58207009A JP8882182A JP8882182A JPS58207009A JP S58207009 A JPS58207009 A JP S58207009A JP 8882182 A JP8882182 A JP 8882182A JP 8882182 A JP8882182 A JP 8882182A JP S58207009 A JPS58207009 A JP S58207009A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- diffraction grating
- semiconductor substrate
- photoresist
- alcohol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000005530 etching Methods 0.000 claims abstract description 24
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000007788 liquid Substances 0.000 claims abstract description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 4
- 230000000737 periodic effect Effects 0.000 claims abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910001868 water Inorganic materials 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 7
- 235000019441 ethanol Nutrition 0.000 claims 3
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 18
- 239000000758 substrate Substances 0.000 abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 11
- 239000000203 mixture Substances 0.000 abstract description 8
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 abstract description 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 abstract 3
- 208000004613 nanophthalmos 3 Diseases 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 1
- 241001282110 Pagrus major Species 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 235000019256 formaldehyde Nutrition 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8882182A JPS58207009A (ja) | 1982-05-27 | 1982-05-27 | 回折格子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8882182A JPS58207009A (ja) | 1982-05-27 | 1982-05-27 | 回折格子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58207009A true JPS58207009A (ja) | 1983-12-02 |
| JPS6216275B2 JPS6216275B2 (enrdf_load_stackoverflow) | 1987-04-11 |
Family
ID=13953584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8882182A Granted JPS58207009A (ja) | 1982-05-27 | 1982-05-27 | 回折格子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58207009A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4200382A1 (de) * | 1992-01-09 | 1993-07-15 | Siemens Ag | Verfahren zum ueberwachsen von iii-v-halbleitermaterial |
| WO2000060651A1 (en) * | 1999-04-05 | 2000-10-12 | Micron Technology, Inc. | Method for etching doped polysilicon with high selectivity to undoped polysilicon |
-
1982
- 1982-05-27 JP JP8882182A patent/JPS58207009A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4200382A1 (de) * | 1992-01-09 | 1993-07-15 | Siemens Ag | Verfahren zum ueberwachsen von iii-v-halbleitermaterial |
| WO2000060651A1 (en) * | 1999-04-05 | 2000-10-12 | Micron Technology, Inc. | Method for etching doped polysilicon with high selectivity to undoped polysilicon |
| US6316370B1 (en) | 1999-04-05 | 2001-11-13 | Micron Technology, Inc. | Method for etching doped polysilicon with high selectivity to undoped polysilicon |
| US6833084B2 (en) | 1999-04-05 | 2004-12-21 | Micron Technology, Inc. | Etching compositions |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6216275B2 (enrdf_load_stackoverflow) | 1987-04-11 |
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