JPS58194240A - イオン注入装置のタ−ゲツト冷却装置 - Google Patents

イオン注入装置のタ−ゲツト冷却装置

Info

Publication number
JPS58194240A
JPS58194240A JP57078714A JP7871482A JPS58194240A JP S58194240 A JPS58194240 A JP S58194240A JP 57078714 A JP57078714 A JP 57078714A JP 7871482 A JP7871482 A JP 7871482A JP S58194240 A JPS58194240 A JP S58194240A
Authority
JP
Japan
Prior art keywords
cooling
disk
passage
target
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57078714A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6322409B2 (https=
Inventor
Koji Matsuda
松田　耕自
Tsukasa Nogami
野上　司
Susumu Yamada
進 山田
Masahiko Aoki
青木　正彦
Katsuo Naito
勝男 内藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NISSHIN HAIBORUTEEJI KK
Nissin High Voltage Co Ltd
Original Assignee
NISSHIN HAIBORUTEEJI KK
Nissin High Voltage Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NISSHIN HAIBORUTEEJI KK, Nissin High Voltage Co Ltd filed Critical NISSHIN HAIBORUTEEJI KK
Priority to JP57078714A priority Critical patent/JPS58194240A/ja
Publication of JPS58194240A publication Critical patent/JPS58194240A/ja
Publication of JPS6322409B2 publication Critical patent/JPS6322409B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
JP57078714A 1982-05-10 1982-05-10 イオン注入装置のタ−ゲツト冷却装置 Granted JPS58194240A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57078714A JPS58194240A (ja) 1982-05-10 1982-05-10 イオン注入装置のタ−ゲツト冷却装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57078714A JPS58194240A (ja) 1982-05-10 1982-05-10 イオン注入装置のタ−ゲツト冷却装置

Publications (2)

Publication Number Publication Date
JPS58194240A true JPS58194240A (ja) 1983-11-12
JPS6322409B2 JPS6322409B2 (https=) 1988-05-11

Family

ID=13669534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57078714A Granted JPS58194240A (ja) 1982-05-10 1982-05-10 イオン注入装置のタ−ゲツト冷却装置

Country Status (1)

Country Link
JP (1) JPS58194240A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003036679A3 (en) * 2001-10-25 2004-02-26 Axcelis Tech Inc Wafer pedestal tilt mechanism and cooling system
WO2008067213A3 (en) * 2006-11-27 2008-09-12 Varian Semiconductor Equipment Techniques for low temperature ion implantation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50109596A (https=) * 1974-02-06 1975-08-28
JPS56145642A (en) * 1980-04-11 1981-11-12 Hitachi Ltd Reciprocal mechanism for intra-vacuum chamber body of revolution

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50109596A (https=) * 1974-02-06 1975-08-28
JPS56145642A (en) * 1980-04-11 1981-11-12 Hitachi Ltd Reciprocal mechanism for intra-vacuum chamber body of revolution

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003036679A3 (en) * 2001-10-25 2004-02-26 Axcelis Tech Inc Wafer pedestal tilt mechanism and cooling system
WO2008067213A3 (en) * 2006-11-27 2008-09-12 Varian Semiconductor Equipment Techniques for low temperature ion implantation
US7528392B2 (en) 2006-11-27 2009-05-05 Varian Semiconductor Equipment Associates, Inc. Techniques for low-temperature ion implantation
CN101563751B (zh) 2006-11-27 2011-11-02 瓦里安半导体设备公司 低温离子植入技术

Also Published As

Publication number Publication date
JPS6322409B2 (https=) 1988-05-11

Similar Documents

Publication Publication Date Title
TWI862579B (zh) 晶舟處理裝置、立式分批熔爐及方法
CN101563751B (zh) 低温离子植入技术
JPH104131A (ja) ロボット組立体及び半導体ウエハ処理搬送装置
JP2023097404A (ja) 高圧熱処理装置
CN103762145B (zh) 旋转盘高温靶室系统
KR100608957B1 (ko) 성막 장치 및 이를 이용한 성막 방법
JPS58194240A (ja) イオン注入装置のタ−ゲツト冷却装置
US4599516A (en) Specimens rotating device
JP3919131B2 (ja) 回転シリンダにより形成されたビーム画成スリットを有する荷電粒子ビーム装置
JPS6259409B2 (https=)
CN118039434A (zh) 一种双支承的液态金属轴承ct球管
US4717829A (en) Platen and beam setup flag assembly for ion implanter
TW577156B (en) Wafer platform and wafer pad assembly for mounting a wafer
JP2019176155A (ja) ウェーハ・ボート冷却デバイス
JPH0528951A (ja) イオン注入装置
JPS6322410B2 (https=)
JPH0855814A (ja) イオン注入装置用エンドステーション
CN113975415A (zh) 一种重组人表皮生长因子制备用消毒装置
JP2003045371A (ja) イオン注入装置の基板支持部材およびイオン注入装置
JPH0823066B2 (ja) イオン注入装置
WO1999031705A1 (fr) Implanteur ionique et procede
CN1043826A (zh) 离子注入真空室
JPH1064471A (ja) イオン注入装置
JPH0927462A (ja) イオン注入方法およびその装置
JPH09129569A (ja) 半導体製造装置