JPS6322410B2 - - Google Patents

Info

Publication number
JPS6322410B2
JPS6322410B2 JP57081782A JP8178282A JPS6322410B2 JP S6322410 B2 JPS6322410 B2 JP S6322410B2 JP 57081782 A JP57081782 A JP 57081782A JP 8178282 A JP8178282 A JP 8178282A JP S6322410 B2 JPS6322410 B2 JP S6322410B2
Authority
JP
Japan
Prior art keywords
chamber
ion implantation
wafer
disk
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57081782A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58198843A (ja
Inventor
Isamu Sakamoto
Koji Matsuda
Susumu Yamada
Masahiko Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NITSUSHIN HAIBORUTEEJI KK
Original Assignee
NITSUSHIN HAIBORUTEEJI KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NITSUSHIN HAIBORUTEEJI KK filed Critical NITSUSHIN HAIBORUTEEJI KK
Priority to JP57081782A priority Critical patent/JPS58198843A/ja
Publication of JPS58198843A publication Critical patent/JPS58198843A/ja
Publication of JPS6322410B2 publication Critical patent/JPS6322410B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
JP57081782A 1982-05-15 1982-05-15 イオン注入装置 Granted JPS58198843A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57081782A JPS58198843A (ja) 1982-05-15 1982-05-15 イオン注入装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57081782A JPS58198843A (ja) 1982-05-15 1982-05-15 イオン注入装置

Publications (2)

Publication Number Publication Date
JPS58198843A JPS58198843A (ja) 1983-11-18
JPS6322410B2 true JPS6322410B2 (https=) 1988-05-11

Family

ID=13756046

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57081782A Granted JPS58198843A (ja) 1982-05-15 1982-05-15 イオン注入装置

Country Status (1)

Country Link
JP (1) JPS58198843A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0342933B1 (en) * 1988-05-18 1996-09-18 Varian Associates, Inc. Disk scanning apparatus for batch ion implanters

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5697954A (en) * 1980-01-07 1981-08-07 Hitachi Ltd Ion-implantation device

Also Published As

Publication number Publication date
JPS58198843A (ja) 1983-11-18

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