JPS58190900A - 水晶の製造方法 - Google Patents

水晶の製造方法

Info

Publication number
JPS58190900A
JPS58190900A JP58005431A JP543183A JPS58190900A JP S58190900 A JPS58190900 A JP S58190900A JP 58005431 A JP58005431 A JP 58005431A JP 543183 A JP543183 A JP 543183A JP S58190900 A JPS58190900 A JP S58190900A
Authority
JP
Japan
Prior art keywords
soln
quartz crystal
solution
mixed
contg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58005431A
Other languages
English (en)
Japanese (ja)
Other versions
JPS646159B2 (enExample
Inventor
Takashi Fujii
隆 藤井
Tsuguo Fukuda
承生 福田
Yoshihiro Kokubu
国分　義弘
Hitoshi Hirano
均 平野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP58005431A priority Critical patent/JPS58190900A/ja
Publication of JPS58190900A publication Critical patent/JPS58190900A/ja
Publication of JPS646159B2 publication Critical patent/JPS646159B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/18—Quartz

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58005431A 1983-01-17 1983-01-17 水晶の製造方法 Granted JPS58190900A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58005431A JPS58190900A (ja) 1983-01-17 1983-01-17 水晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58005431A JPS58190900A (ja) 1983-01-17 1983-01-17 水晶の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP11875880A Division JPS5854119B2 (ja) 1980-08-28 1980-08-28 α−アルミナ単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS58190900A true JPS58190900A (ja) 1983-11-07
JPS646159B2 JPS646159B2 (enExample) 1989-02-02

Family

ID=11610997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58005431A Granted JPS58190900A (ja) 1983-01-17 1983-01-17 水晶の製造方法

Country Status (1)

Country Link
JP (1) JPS58190900A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0693580A1 (en) * 1994-07-18 1996-01-24 Sumitomo Electric Industries, Ltd. Oxide thin film having quartz crystal structure and process for producing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0693580A1 (en) * 1994-07-18 1996-01-24 Sumitomo Electric Industries, Ltd. Oxide thin film having quartz crystal structure and process for producing the same
US5879811A (en) * 1994-07-18 1999-03-09 Sumitomo Electric Industries, Ltd. Oxide thin film having quartz crystal structure

Also Published As

Publication number Publication date
JPS646159B2 (enExample) 1989-02-02

Similar Documents

Publication Publication Date Title
US4231838A (en) Method for flux growth of KTiOPO4 and its analogues
JPS58190900A (ja) 水晶の製造方法
JPS5854119B2 (ja) α−アルミナ単結晶の製造方法
CN112521016A (zh) 一种氟硅酸钇晶相钇铝硅酸盐氧氟玻璃陶瓷及其制备方法
JPH0478593B2 (enExample)
US3431066A (en) Method for producing yttrium aluminum oxide garnet crystals
US3674455A (en) Process for the synthesis of glass and single crystal germanates of identical composition
US3418071A (en) Method for producing yttrium aluminate crystals
JPS58120597A (ja) 光彩効果を示すクリソベリル単結晶及びその製造方法
JPH0789796A (ja) Ｐｂ含有β−ＢＢＯ単結晶の育成方法
JPS60215531A (ja) 石英ガラスの製造方法
JPS58115092A (ja) Ｆ・ｚ法によるベリル結晶合成法
JPH01119599A (ja) ビスマス置換磁性ガーネット単結晶の製造方法
JPS63236719A (ja) セリウム含有石英系レ−ザ−ガラスの製造方法
CN113862787A (zh) 化合物硅酸铋铯非线性光学晶体及其制备方法和用途
JPH0250080B2 (enExample)
JPS606912B2 (ja) ホウ酸インジウム単結晶の製造方法
JPH02279583A (ja) 単結晶育成方法
JPS6128638B2 (enExample)
JPH02172891A (ja) 単結晶育成方法
JPH0232238B2 (ja) Gadoriniumutetsugaanetsutotanketsushonoseizohoho
JPS5815479B2 (ja) 炭化硅素単結晶の製造方法
JPS5818326B2 (ja) シリカ質のトリジマイト状物質の製造法
JPH0319199B2 (enExample)
JPS6210960B2 (enExample)