JPS646159B2 - - Google Patents
Info
- Publication number
- JPS646159B2 JPS646159B2 JP58005431A JP543183A JPS646159B2 JP S646159 B2 JPS646159 B2 JP S646159B2 JP 58005431 A JP58005431 A JP 58005431A JP 543183 A JP543183 A JP 543183A JP S646159 B2 JPS646159 B2 JP S646159B2
- Authority
- JP
- Japan
- Prior art keywords
- solution
- crystals
- iron
- sio
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/18—Quartz
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58005431A JPS58190900A (ja) | 1983-01-17 | 1983-01-17 | 水晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58005431A JPS58190900A (ja) | 1983-01-17 | 1983-01-17 | 水晶の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11875880A Division JPS5854119B2 (ja) | 1980-08-28 | 1980-08-28 | α−アルミナ単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58190900A JPS58190900A (ja) | 1983-11-07 |
| JPS646159B2 true JPS646159B2 (enExample) | 1989-02-02 |
Family
ID=11610997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58005431A Granted JPS58190900A (ja) | 1983-01-17 | 1983-01-17 | 水晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58190900A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2153848C (en) * | 1994-07-18 | 2003-05-13 | Motoyuki Tanaka | Oxide thin film having quartz crystal structure and process for producing the same |
-
1983
- 1983-01-17 JP JP58005431A patent/JPS58190900A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58190900A (ja) | 1983-11-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0004974B1 (en) | Process for producing a single crystal of ktiopo4 or its analogues | |
| JPH0512320B2 (enExample) | ||
| JPS646159B2 (enExample) | ||
| JPS5854119B2 (ja) | α−アルミナ単結晶の製造方法 | |
| Bennett | Seeded growth of garnet from molten salts | |
| JPS59164692A (ja) | 酸化物単結晶の製造方法 | |
| JPH0478593B2 (enExample) | ||
| CN103288352B (zh) | SiO2—NaF—Er3+:GGG系玻璃陶瓷及其制备方法 | |
| US3674455A (en) | Process for the synthesis of glass and single crystal germanates of identical composition | |
| CN115772703B (zh) | 一种氟代硼酸锂钡铽磁光晶体及其制备方法和应用 | |
| JPS63215598A (ja) | 低温相硼酸バリウム単結晶の育成方法 | |
| CN120719381A (zh) | 一种利用熔盐法制备二氧化铀单晶的方法及得到的二氧化铀单晶 | |
| Andreetti et al. | Crystal growth from the system ThO2-PbO-V2O5 | |
| JPS606912B2 (ja) | ホウ酸インジウム単結晶の製造方法 | |
| JPH01119599A (ja) | ビスマス置換磁性ガーネット単結晶の製造方法 | |
| JP2723643B2 (ja) | 合成石英ガラスルツボの製造方法 | |
| JPS58115092A (ja) | F・z法によるベリル結晶合成法 | |
| CN119736699A (zh) | 一种基于助熔剂的六方R1-xInxFeO3(R=Lu,Yb,Tm,x=0-1)晶体的生长方法 | |
| JPH0250080B2 (enExample) | ||
| CN113862787A (zh) | 化合物硅酸铋铯非线性光学晶体及其制备方法和用途 | |
| JPH02279583A (ja) | 単結晶育成方法 | |
| JPS58120597A (ja) | 光彩効果を示すクリソベリル単結晶及びその製造方法 | |
| JPS63236719A (ja) | セリウム含有石英系レ−ザ−ガラスの製造方法 | |
| JPH0319199B2 (enExample) | ||
| JPS59152295A (ja) | 単結晶製造装置 |