JPS5818950A - Multilayer wiring substrate - Google Patents

Multilayer wiring substrate

Info

Publication number
JPS5818950A
JPS5818950A JP11707281A JP11707281A JPS5818950A JP S5818950 A JPS5818950 A JP S5818950A JP 11707281 A JP11707281 A JP 11707281A JP 11707281 A JP11707281 A JP 11707281A JP S5818950 A JPS5818950 A JP S5818950A
Authority
JP
Japan
Prior art keywords
wiring
wirings
substrate
pads
lsi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11707281A
Other languages
Japanese (ja)
Other versions
JPH0125228B2 (en
Inventor
Tatsuo Inoue
龍雄 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11707281A priority Critical patent/JPS5818950A/en
Publication of JPS5818950A publication Critical patent/JPS5818950A/en
Publication of JPH0125228B2 publication Critical patent/JPH0125228B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383Multilayer substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386Geometry or layout of the interconnection structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0286Programmable, customizable or modifiable circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components
    • H05K1/182Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]

Abstract

PURPOSE:To perform easily amendable and high-speed and high-density mounting by a method wherein wiring patterns for amendment are provided in 45 deg. direction to a side and the end sections are exposed to the surface of a substrate in a multilayer wiring substrate having wiring patterns running in parallel and at right angles to one side of the substrate. CONSTITUTION:Multilayer wirings 21, 22 are crossed at right angles respectively and wiring patterns 31 for amendment are provided in 45 deg. direction to the multilayer wirings 21, 22 and pads 32 are made by exposing the end sections of the patterns 31 to the regions except pads 42 for LSI adhesion and pads 41 for LSI connection on the substrate surface. For example, a recessed section is formed at the region corresponding to an insulating layer 23 and pads 32 are formed on the same plane as the patterns 31. With each pad 32 or each pad 41 connected, amendment is completed by a few externally mounted wirings 33 as the wirings 33 are formed with high density. Therefore, the mounting density of LSI does not decrease and amendment wirings and substrate wirings form at 45 deg. and there are a few paralleled section. Thus, signal leakage is extremely small.

Description

【発明の詳細な説明】 本発明は、多層配線基板に関し、特に修正布線と基本配
線パターン間の信号漏洩を少なくすることができる多層
配線基板の構造に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a multilayer wiring board, and more particularly to a structure of a multilayer wiring board that can reduce signal leakage between corrected wiring and basic wiring patterns.

従来、LSIパッケージとしては、印刷配線板が用いら
れ、配線に誤シが発見された場合若しくは配線の変更が
必要になった場合には、所望の修正布線を外付けKよっ
て接続していた。しかし、近年のコンビーータの中央処
理装置等に実装されるLSIパッケージにおいては、処
理速度の高速化のl!dllから、平均布線長を短くす
る九め実装の高密度化が図られておシ、修正布線をすべ
て外付は布41によって行なうのに必要な空間的余裕が
無くなっている。このため、修シー榴線の一部をあらか
じめ配線基板中く形成しておく必要が生じている。しか
し、同一基板中に基本配線パターンと修正布線を形成す
ると、修正布線と基本配線パターン間の信号漏洩が生じ
るおそれがある。S上布線と基本配線パターンとの間に
信号漏洩があると、誤動作等の原因になるから不都合で
ある。
Conventionally, printed wiring boards have been used for LSI packages, and when an error is discovered in the wiring or when it is necessary to change the wiring, the desired corrected wiring is connected using an external K. . However, in recent years, LSI packages installed in the central processing units of converters, etc. have been designed to increase processing speed. dll to shorten the average wiring length, and the space necessary to carry out all correction wiring externally using the cloth 41 is no longer available. For this reason, it has become necessary to form a portion of the repair wire in advance in the wiring board. However, if the basic wiring pattern and the modified wiring are formed on the same board, there is a risk that signal leakage will occur between the modified wiring and the basic wiring pattern. If there is signal leakage between the S upper wiring and the basic wiring pattern, it is inconvenient because it may cause malfunctions.

本発明の目的は、基本配線パターンとの信号漏洩の少な
い修正布線を、あらかじめ多層配線基板中に形成し、修
正が容易で高速高密度実装可能な多層配線基板を提供す
ることにある。
An object of the present invention is to provide a multilayer wiring board in which correction wiring with little signal leakage from the basic wiring pattern is formed in advance in the multilayer wiring board, and correction is easy and high-speed, high-density mounting is possible.

本発明の配線基板は、基板の一辺に平行な配線パターン
および直角な配線パターンを有する多1−配線基板にお
いて、基板の一辺に対して45°の方向に修正布線パタ
ーンを形成し、該修正布線パターンの端部を基板表面に
露出させたことを特徴とする。
The wiring board of the present invention is a multi-wiring board having a wiring pattern parallel to one side of the board and a wiring pattern perpendicular to one side of the board. A feature is that the ends of the wiring pattern are exposed on the substrate surface.

次に、本発明について、#A面を参照して詳細に説明す
る。
Next, the present invention will be described in detail with reference to side #A.

!1図は、本発明の一実施例を示す平面図であシ、第2
図はそのA−A断面図である。すなわち、セラぐツク基
板10上には、基本配線パターンにニジ基本配@21お
よび22が多層に形成されている。各層の配線間は勿論
絶縁層28によって絶縁されており一また必要個所にお
いて層間接続導体24によって接続されている。配線2
1は図中左右方向に延びた配線であシ、配線22は図中
前後方向の配線であシ相互に直交している。以上は、従
来の多層配線と同様であり、簡単のため第1図には示さ
れていない。そして、上述の基本配線パターンの上層に
修正布線パターン81を形成する。
! Figure 1 is a plan view showing one embodiment of the present invention.
The figure is a sectional view taken along line A-A. That is, on the ceramic substrate 10, the basic wiring patterns 21 and 22 are formed in multiple layers. The wiring in each layer is of course insulated by an insulating layer 28 and connected at necessary locations by interlayer connection conductors 24. Wiring 2
Wires 1 extend in the left-right direction in the figure, and wires 22 extend in the front-rear direction in the figure and are orthogonal to each other. The above is similar to conventional multilayer wiring, and is not shown in FIG. 1 for simplicity. Then, a modified wiring pattern 81 is formed on the upper layer of the basic wiring pattern described above.

修正布線パターン31は、第1図から理解されるように
上述の基本配線パターンに対して46°の角Iをなす方
向(直交する2つの方向が存在する)に形成されている
。そして、基板表面上のLSI接着パッド42およびそ
の周囲に配されたLSI接伏パッド41のない領域テ、
紡記修正布線パターン81の端部を露出させパッド82
を形成する。
As understood from FIG. 1, the modified wiring pattern 31 is formed in a direction forming an angle I of 46° with respect to the above-mentioned basic wiring pattern (there are two orthogonal directions). Then, an area where there is no LSI adhesive pad 42 on the substrate surface and no LSI contact pad 41 arranged around it,
The end of the spinning correction wiring pattern 81 is exposed and the pad 82 is attached.
form.

本実施例では、e鎌層28の該轟領域に凹部を形成する
ことによって修正布縁パターン81と同一平面上にパッ
ド82t−形成しているが、このような凹部を設けない
で、パッド8怠を表IiK形成し。
In this embodiment, the pad 82t- is formed on the same plane as the corrected fabric edge pattern 81 by forming a recess in the area of the e-sickle layer 28, but the pad 82t- is formed on the same plane as the modified cloth edge pattern 81. Form a table IiK.

層間接続導体によりて修正布縁81と接続してもよい、
その場合は、修正布縁パターン81Fi、必ずしも基本
配線パターン21,8gの上層に形成しなくてもよい、
すなわち、下層部又は中間4VC形成することも可能で
ある。修正有線パターンは全部の修正布縁を形成する4
のではなく、上記パッド82相互関又は、上記パッド8
Bと紡記パッド41間を外付は付線88によりて適宜接
続することKより修正を完成する。しかし、修正布縁8
1が例えば金ペーストを印刷焼成し九厚狭又は選択金め
つき法′7#II膜等によつて高密度に形成されている
ため、僅かな外付は布11$8の接続によって修正を完
成することができる6tた、そのために必要な領域は僅
かでよいから、LSI接着パッドおよびLSI接続パッ
ド等の領域の間隙を使用することで足シる。従って、L
SIの搭載密度を減少することはない。まえ、上記修正
4酬axは、基本配線21.22等に対して46°の角
度で形成されているから、両配線が長区間平行すること
がないため、その間の信号漏洩は極めて少ない。なお、
上述の絶縁層28は、従来と同様に、ガラス若しくはセ
ラばツクを主成分とする絶縁ペースト又は有機高分子材
料により形成される。ままた、外付は布#888は、パ
ッド82が金の場合には、金線を用いて熱圧着によシ接
続し、パッド82が鋼の場合には、鋼線を用いてハンダ
付けすれば良い。
It may be connected to the modified cloth edge 81 by an interlayer connection conductor.
In that case, the modified cloth edge pattern 81Fi does not necessarily have to be formed on the upper layer of the basic wiring patterns 21 and 8g.
That is, it is also possible to form 4VC in the lower layer or in the middle. The modified wire pattern forms the entire modified cloth border 4
rather than the pad 82 mutually or the pad 8
The correction is completed by connecting B and the spinning pad 41 as appropriate with external attached wires 88. However, the modified cloth edge 8
1 is formed in a high density by printing and firing gold paste and using 9 thickness/narrow or selective gold plating method '7#II film, etc., so slight external attachments are completed by connecting cloth 11$8. However, since only a small area is required for this purpose, space can be saved by using gaps between areas such as LSI bonding pads and LSI connection pads. Therefore, L
SI loading density will not be reduced. First, since the modified four wires ax are formed at an angle of 46° with respect to the basic wirings 21, 22, etc., the two wirings are not parallel to each other for a long period of time, so that there is extremely little signal leakage between them. In addition,
The above-mentioned insulating layer 28 is formed of an insulating paste or an organic polymer material whose main component is glass or ceramics, as in the conventional case. In addition, for the external cloth #888, if the pad 82 is made of gold, it is connected by thermocompression using a gold wire, and if the pad 82 is made of steel, it is connected by soldering using a steel wire. Good.

以上のように、本発明においては、基本配線パターンと
46°の角度をなす修正布線パターンを形成し、かつ、
その端部を基板表面のLSI接続パッド等のない領域に
露出させた構造であるから、修正布線パターンの端部相
互間又は、該熾部とLSI接続パッド間等を少数の外付
は布線で接続することKより容易に修正布線を完成させ
ることが可能であり、そのためにLSIの搭載密度を減
少させることなく、しかも修正布線と基本配線間の信号
漏洩を生じさせないという効果を有する。
As described above, in the present invention, a modified wiring pattern is formed at an angle of 46° with the basic wiring pattern, and
Since the structure has its ends exposed in areas where there are no LSI connection pads, etc. on the surface of the board, a small number of external wires can be placed between the ends of the corrected wiring pattern or between the edges and the LSI connection pads. It is possible to complete the modified wiring more easily than by connecting with wires, and therefore, it is possible to complete the modified wiring without reducing the LSI mounting density, and also has the effect of not causing signal leakage between the modified wiring and the basic wiring. have

【図面の簡単な説明】[Brief explanation of drawings]

81図は本発明の一実施例を示す平面図、第2図はその
A−A断面図である。 図において、1G・・・七クイック基板、21.22・
・・基本配線、28・・・絶縁層、24・・・層間接続
導体、81・・・修正布線、82・・・パッド、88・
・・外付は付線、41・・・LSI接続パッド、4ト・
・LS Im層パッド。 代理人 弁理士住田俊宗
FIG. 81 is a plan view showing an embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line AA. In the figure, 1G...7 quick board, 21.22.
...Basic wiring, 28...Insulating layer, 24...Interlayer connection conductor, 81...Correction wiring, 82...Pad, 88...
... External wires, 41... LSI connection pad, 4 to...
・LS Im layer pad. Agent: Patent attorney Toshimune Sumita

Claims (1)

【特許請求の範囲】[Claims] 基板の一辺に平行な配線パターンおよび直角な配線パタ
ーンを有する多層配線基板において、基板の一辺に対し
て46°の方向に修正布線パターンを形成し、該修正布
線パターンの端部を基板表面に露出させたことを特徴と
する多層配線基板。
In a multilayer wiring board having a wiring pattern parallel to one side of the board and a wiring pattern perpendicular to one side of the board, a corrected wiring pattern is formed in a direction of 46 degrees to one side of the board, and the end of the corrected wiring pattern is attached to the board surface. A multilayer wiring board characterized by being exposed to.
JP11707281A 1981-07-28 1981-07-28 Multilayer wiring substrate Granted JPS5818950A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11707281A JPS5818950A (en) 1981-07-28 1981-07-28 Multilayer wiring substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11707281A JPS5818950A (en) 1981-07-28 1981-07-28 Multilayer wiring substrate

Publications (2)

Publication Number Publication Date
JPS5818950A true JPS5818950A (en) 1983-02-03
JPH0125228B2 JPH0125228B2 (en) 1989-05-16

Family

ID=14702711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11707281A Granted JPS5818950A (en) 1981-07-28 1981-07-28 Multilayer wiring substrate

Country Status (1)

Country Link
JP (1) JPS5818950A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6135578A (en) * 1984-07-27 1986-02-20 Agency Of Ind Science & Technol Connection of superconductive circuit
JPH0196953A (en) * 1987-09-25 1989-04-14 Internatl Business Mach Corp <Ibm> Wiring structure
US5177594A (en) * 1991-01-09 1993-01-05 International Business Machines Corporation Semiconductor chip interposer module with engineering change wiring and distributed decoupling capacitance

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55108797A (en) * 1979-02-13 1980-08-21 Hitachi Ltd Circuit board
JPS567457A (en) * 1979-06-29 1981-01-26 Ibm Package for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55108797A (en) * 1979-02-13 1980-08-21 Hitachi Ltd Circuit board
JPS567457A (en) * 1979-06-29 1981-01-26 Ibm Package for semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6135578A (en) * 1984-07-27 1986-02-20 Agency Of Ind Science & Technol Connection of superconductive circuit
JPH0428154B2 (en) * 1984-07-27 1992-05-13 Kogyo Gijutsu Incho
JPH0196953A (en) * 1987-09-25 1989-04-14 Internatl Business Mach Corp <Ibm> Wiring structure
US5177594A (en) * 1991-01-09 1993-01-05 International Business Machines Corporation Semiconductor chip interposer module with engineering change wiring and distributed decoupling capacitance

Also Published As

Publication number Publication date
JPH0125228B2 (en) 1989-05-16

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