JPS6135578A - Connection of superconductive circuit - Google Patents

Connection of superconductive circuit

Info

Publication number
JPS6135578A
JPS6135578A JP15527784A JP15527784A JPS6135578A JP S6135578 A JPS6135578 A JP S6135578A JP 15527784 A JP15527784 A JP 15527784A JP 15527784 A JP15527784 A JP 15527784A JP S6135578 A JPS6135578 A JP S6135578A
Authority
JP
Japan
Prior art keywords
superconducting
film
circuit
wiring
wirings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15527784A
Other languages
Japanese (ja)
Other versions
JPH0428154B2 (en
Inventor
Yoshinobu Taruya
良信 樽谷
Hisao Hayakawa
早川 尚夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Hitachi Ltd filed Critical Agency of Industrial Science and Technology
Priority to JP15527784A priority Critical patent/JPS6135578A/en
Publication of JPS6135578A publication Critical patent/JPS6135578A/en
Publication of JPH0428154B2 publication Critical patent/JPH0428154B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/80Constructional details
    • H10N60/85Superconducting active materials

Abstract

PURPOSE:To enable high-packing density superconductive integrated circuits to be wired to each other, by forming independent superconductive integrated circuits on the same substrate, and effecting connection between these integrated circuits by means of superconductive film wirings formed on the substrate. CONSTITUTION:Wirings 2, 3 are arrayed in a lattice by employing one or two superconductive layers which are the same as those used in the integrated circuits. In the case of two or more layers, the wirings are insulated from each other through an interlayer insulating film 10. As a material for the superconductive wiring, Nb or a superconductive material which contains Nb as a principal component, such as Nb3Sn, may be employed. At the intersections in the lattice wiring array, the wirings 2, 3, which need to be connected to each other, are connected by an alloy film 4 containing Pb as a principal components. In the case where the wirings 2, 3 are connected at two positions at an intersection, a Pb alloy 9 as a first layer is first formed to connect the wirings 3, and the interlayer insulating film 10 is formed, and then, a Pb alloy film 11 as a second layer is formed.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、超電導性を利用した計算回路に係り、とくに
集積回路の高密度実装化を行な“うのに好適な集積回路
の搭載法および集積回路間の結線法に関するものである
[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a calculation circuit that utilizes superconductivity, and in particular to a mounting method and method for integrated circuits suitable for high-density packaging of integrated circuits. It relates to wiring methods between integrated circuits.

〔発明の背景〕[Background of the invention]

従来の超電導集積回路チップの実装方法に関しては、所
定の寸法に切断された集積回路チップをチップキャリア
上に搭載し、チップとチップキャリア間の電気的接続に
ついては超電導性を有するPb合金の厚膜を介して、チ
ップのパッドからチップキャリアに連結する方法が用い
られているCH,C,Jones and D、J、H
errell、  I BM J。
Regarding the conventional mounting method of superconducting integrated circuit chips, an integrated circuit chip cut to predetermined dimensions is mounted on a chip carrier, and electrical connections between the chip and the chip carrier are made using a thick film of superconducting Pb alloy. CH, C, Jones and D, J, H.
errell, I BM J.

of  Res、 and Dcv、 Vol、  2
4. P 172+1980)、この超電導回路の実装
方法における問題点はパッド部分における接続に対する
信頼性の問題である。数百〜数千ゲーI−の高集積論理
回路においては、チップあたり100個前後のパッドが
必要である。このような配線の接続方法において、欠陥
無く、多数のパッドを電気的に接続することはきわめて
困随である。さらに、このような接続方法においては、
接続部における一インピーダンスのミスマツチの問題、
さらには、全体的な高密度!、IS積化に対する制約が
ある。
of Res, and Dcv, Vol, 2
4. P 172+1980), the problem with this superconducting circuit mounting method is the reliability of the connection at the pad portion. In highly integrated logic circuits of hundreds to thousands of games, approximately 100 pads are required per chip. In such a wiring connection method, it is extremely difficult to electrically connect a large number of pads without defects. Furthermore, in this connection method,
One impedance mismatch problem at the connection,
Moreover, the overall high density! , there are constraints on IS integration.

〔発明の目的〕[Purpose of the invention]

本発明は超電導集積回路の実装技術に関して、高密度集
積回路の相互配線を可能にし、かつ信頼性の高い集積回
路間の接続方法を与えるものである。
The present invention relates to mounting technology for superconducting integrated circuits, and provides a method for interconnecting high-density integrated circuits and providing a highly reliable connection between integrated circuits.

〔発明の概要〕[Summary of the invention]

本発明においては、超電導集積回路間の接続方法に関し
て、個々の独立した集積回路を同一基板上に形成し、こ
れらの集積回路間の結線を、基板上に形成した超電導膜
配線によって行なう、この配線は集積回路内で用いる超
電導層と同一の超電導層を15あるいは2層用いて、格
子状に配する。
In the present invention, regarding a method for connecting superconducting integrated circuits, each independent integrated circuit is formed on the same substrate, and connections between these integrated circuits are made by superconducting film wiring formed on the substrate. The method uses 15 or 2 superconducting layers, which are the same as those used in integrated circuits, and is arranged in a grid pattern.

2層以上の場合、配線は互に層間絶縁膜を介して絶縁さ
れる。超電導配線用の材料はNb、あるいはNb3Sn
などNbを主成分として含有する超電導材料とする。格
子状配線列の交点における配線の接続は以下のようにし
て行う。つまり、接続を必要とする配線間を、Pbを主
成分とする合金膜によって接続する。交点においぞ配線
の接続が2ケ所になる場合は、第1WI目のPb合金接
続後、層間絶縁膜を形成し、この上から、第25目のP
b合金膜を形成することにより接続を行う。
In the case of two or more layers, the wirings are insulated from each other via an interlayer insulating film. The material for superconducting wiring is Nb or Nb3Sn
A superconducting material containing Nb as a main component. Wiring connections at the intersections of the grid-like wiring arrays are performed as follows. In other words, interconnects that require connection are connected by an alloy film containing Pb as a main component. If there are two interconnections to be connected at the intersection, an interlayer insulating film is formed after the first WI Pb alloy connection, and from above, the 25th Pb alloy is connected.
b Connection is made by forming an alloy film.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明を実施例を参照して詳細に説明する。超電
導回路はジョセフソン接合をスイッチング素子とし、電
流を直接ゲートに注入することによりスイッチング動作
を行なわせるl、いわゆる電流注入直接結合型回路を基
本ゲー1−とする論理回路とした。回路の種類は直接結
合型論理ゲートを直列に配列した鎖状回路とした。1回
路当りの占有面積は2.51角とした。1回路の領域は
従来の回路チップと同じく、周辺に100μmX100
μmの面積を有するパッド電極を配列することにより決
められる。回路内の配線は2層の超電導膜によって形成
されるが、同時に回路と回路間に格子状に2次元的な配
線を行なう。一方向の配線の端部は回路パッドに接続さ
れる。2インチのシリコンウェハ上に、上に述べた論理
ゲート1.0段分の鎖状回路を1個含んだ回路を4崎並
べたにれらの回路の間のパッド列に平行な配線は2本で
ある。超電導回路は磁気蔽遮を兼ねるグランドプレーン
膜、抵抗膜、2[の超電導配線膜とジョセフソン接合と
層間絶縁膜から構成される。
Hereinafter, the present invention will be explained in detail with reference to Examples. The superconducting circuit uses a Josephson junction as a switching element and performs a switching operation by directly injecting current into the gate.The logic circuit is a so-called current injection direct coupling circuit as a basic gate. The type of circuit was a chain circuit in which directly coupled logic gates were arranged in series. The area occupied by one circuit was 2.51 squares. The area of one circuit is 100 μm x 100 around the periphery, same as conventional circuit chips.
It is determined by arranging pad electrodes having an area of μm. The wiring within the circuit is formed by two layers of superconducting films, and at the same time two-dimensional wiring is provided in a lattice pattern between the circuits. The ends of the wires in one direction are connected to circuit pads. On a 2-inch silicon wafer, the circuits containing one chain circuit for 1.0 stages of logic gates are lined up. There are 2 lines parallel to the pad rows between these circuits. It's a book. The superconducting circuit is composed of a ground plane film that also serves as a magnetic shield, a resistive film, two superconducting wiring films, a Josephson junction, and an interlayer insulating film.

ジョセフソン接合の電極を形成する超電導膜は配線と同
一の超電導層が用いられる。グランドプレーン膜はNb
膜、抵抗膜はMO膜、ジョセフソン接合の下部電極膜は
Nb膜、°上部fI!極膜はPb・In合金膜、層間絶
縁膜はSiO膜とした。各集積回路を完成した段階で、
回路間に交差する配線格子が存在するが、この配線格子
はしたがって、ジョセフソン接合下部電極膜に用いたN
b1漠である。
The same superconducting layer as the wiring is used for the superconducting film forming the electrode of the Josephson junction. The ground plane film is Nb
The resistive film is an MO film, the lower electrode film of the Josephson junction is a Nb film, and the upper fI! The pole film was a Pb-In alloy film, and the interlayer insulating film was a SiO film. Once each integrated circuit is completed,
There is a wiring grid that intersects between the circuits, but this wiring grid is therefore
b1 is vague.

インピーダンスのマツチングをとるために、回路間の配
線領域にもグランドプレーン膜を敷く0m間絶縁膜は5
iOl14である。隣接する各鎖状回路どうしを互に直
列に接続し、1個のウェハ上で40段分の鎖状回路とし
たが、これは以下の方法で行った。第1図に示すように
配線の交差点において、層間絶縁膜に矩形の窓1を開く
。各部m2゜3の一部を窓の内部にまで入れるが、互に
接触しない範囲に留めておく。次にレジスト膜のパター
ン形成工程および、Pb−In膜の成膜工程およびリフ
トオフ工程を通じて1図に示すような配線間の接続膜4
を形成する。このようなコニ程を通じて。
In order to match the impedance, a ground plane film is also laid in the wiring area between the circuits.
iOl14. Adjacent chain circuits were connected in series to form 40 stages of chain circuits on one wafer, and this was done in the following manner. As shown in FIG. 1, a rectangular window 1 is opened in the interlayer insulating film at the intersection of the wiring lines. Insert a portion of each part m2゜3 into the window, but keep it within a range where they do not touch each other. Next, through a resist film pattern formation process, a Pb-In film formation process, and a lift-off process, a connecting film 4 between wirings as shown in FIG. 1 is formed.
form. Through this kind of process.

第2図に示すように、直結型鎖状回路5間の直列接続を
配線2,3および配線接続6を用いることにより完成し
た。図において入力信号は配線7より入り、出力信号は
配線8より取出される。
As shown in FIG. 2, the series connection between the direct-coupled chain circuits 5 was completed by using the wires 2 and 3 and the wire connection 6. In the figure, an input signal is input through a wiring 7, and an output signal is taken out through a wiring 8.

なおこの回路量接続においては不要であったが。Note that this was not necessary in this circuit connection.

直交する配線列において、羊れぞれの配線が直線状に結
線され、これらの配線が絶縁される必要のある場合が生
じる。このような結保は次のようにして行なった。第3
図に示すように、層間絶縁膜する。膜パターンの形成は
リフ1〜オフ法にJ二って行なった。次にPb・In超
電導膜9をSiO絶縁膜10で覆う。絶嶽膜パターンの
形成もやはりリフトオフ法により行なった。次にやはり
Pb・In合金膜11により上側超電導膜2の接続を行
なった。この超電導膜パターンの形成ルや番キリ、リフ
トオフ法−により行なった、 【発明の効果〕 以上説明したごとく、本発明においては、1枚帆 のウェハ上に多数個の回路を体列し、これら回路間の配
線および結線する方法を与えるものであるが、このよう
な方法によフて次のような効果が生まれる。
In orthogonal wiring rows, the wiring of each sheep may be connected in a straight line, and these wirings may need to be insulated. This binding was done as follows. Third
As shown in the figure, an interlayer insulating film is formed. The film pattern was formed using the riff 1-off method and J2. Next, the Pb.In superconducting film 9 is covered with a SiO insulating film 10. The formation of the high-rise film pattern was also carried out by the lift-off method. Next, the upper superconducting film 2 was also connected using the Pb.In alloy film 11. [Effects of the Invention] As explained above, in the present invention, a large number of circuits are arrayed on one wafer, and these This method provides a method for wiring and connecting circuits, and this method produces the following effects.

(1)チップ片の製作、チップキャリアの製作および、
チップのチップキャリア上へのマウン1〜という工程を
不要とするので1回路系全体としての工程を短縮できる
(1) Production of chip pieces, production of chip carriers, and
Since the process of mounting the chip onto the chip carrier is not necessary, the process for the entire circuit system can be shortened.

(2)1枚のウェハ上ですべての配線を行なうので配線
、および結線の欠陥を低減できる。
(2) Since all wiring is done on one wafer, defects in wiring and connections can be reduced.

(3)結線部をエツチングにより除去し、必要な結線用
マスクを用いることにより、結線の変更を可能にする。
(3) By removing the connection portion by etching and using a necessary connection mask, it is possible to change the connection.

(4)記憶回路や演、算回路など1品種の異なる回晶−
ウエバ上に形成することにより、まとまった機能を有す
る計算回路を植成できる。
(4) Different types of crystals such as memory circuits, arithmetic circuits, etc.
By forming it on the web, it is possible to implant a calculation circuit having a set of functions.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は回路量配線における結線部分を示す平面図、第
2図は回路4個を互に接続した全体図、第9図は回路量
配線における互に直交する結線部分を示す平面図である
。 1・・・窓、2,3・・・配線、4・・・接続膜、鶴 5・・・直情型鎖状回路、9・・・超電導膜。 10・・・絶縁膜。
Fig. 1 is a plan view showing the connection parts in the circuit wiring, Fig. 2 is an overall view of four circuits interconnected, and Fig. 9 is a plan view showing the mutually orthogonal connection parts in the circuit wiring. . 1...Window, 2,3...Wiring, 4...Connection film, Crane 5...Direct-type chain circuit, 9...Superconducting film. 10...Insulating film.

Claims (1)

【特許請求の範囲】 1)超電導性素子および超電導配線等により構成される
超電導集積回路において、個々の独立した集積回路を同
一基板上に形成し、これらの集積回路間の結線を基板上
に形成された超電導膜によって行なうことにより、単一
の基板上において所定の機能を有する計算回路を構成す
ることを特徴とする超電導回路の結線方法。 2)特許請求の範囲第1項記載の超電導回路の結線方法
において、回路間に回路形成工程と同時に互に直交し、
かつ層間絶縁膜によってへだてられた配線格子列を形成
し、かつ回路形成後、回路間の接続を配線格子列の交点
を超電導膜により接続することにより行なうことを特徴
とする超電導回路の結線方法。 3)特許請求の範囲第2項記載の超電導回路の結線方法
において、配線格子列は、Nb膜あるいはNbを主成分
とする超電導化合物あるいは超電導合金膜からなり、配
線格子間の結線がPbを主成分とする合金膜とすること
を特徴とする超電導回路の結線方法。
[Claims] 1) In a superconducting integrated circuit composed of superconducting elements, superconducting wiring, etc., individual independent integrated circuits are formed on the same substrate, and connections between these integrated circuits are formed on the substrate. 1. A method for connecting a superconducting circuit, characterized in that a calculation circuit having a predetermined function is constructed on a single substrate by using a superconducting film made of a superconducting film. 2) In the method for connecting a superconducting circuit according to claim 1, the circuits are connected at right angles to each other at the same time as the circuit forming step,
A method for connecting a superconducting circuit, characterized in that wiring grid rows separated by an interlayer insulating film are formed, and after the circuit is formed, connections between the circuits are made by connecting intersections of the wiring grid rows with a superconducting film. 3) In the method for connecting a superconducting circuit according to claim 2, the wiring grid rows are made of a Nb film or a superconducting compound or superconducting alloy film containing Nb as a main component, and the connections between the wiring grids are made of Pb as a main component. A method for connecting a superconducting circuit characterized by using an alloy film as a component.
JP15527784A 1984-07-27 1984-07-27 Connection of superconductive circuit Granted JPS6135578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15527784A JPS6135578A (en) 1984-07-27 1984-07-27 Connection of superconductive circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15527784A JPS6135578A (en) 1984-07-27 1984-07-27 Connection of superconductive circuit

Publications (2)

Publication Number Publication Date
JPS6135578A true JPS6135578A (en) 1986-02-20
JPH0428154B2 JPH0428154B2 (en) 1992-05-13

Family

ID=15602380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15527784A Granted JPS6135578A (en) 1984-07-27 1984-07-27 Connection of superconductive circuit

Country Status (1)

Country Link
JP (1) JPS6135578A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5818950A (en) * 1981-07-28 1983-02-03 Nec Corp Multilayer wiring substrate
JPS5819742A (en) * 1981-07-24 1983-02-04 Pioneer Video Corp Optical system driver for recorded information reader

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5819742A (en) * 1981-07-24 1983-02-04 Pioneer Video Corp Optical system driver for recorded information reader
JPS5818950A (en) * 1981-07-28 1983-02-03 Nec Corp Multilayer wiring substrate

Also Published As

Publication number Publication date
JPH0428154B2 (en) 1992-05-13

Similar Documents

Publication Publication Date Title
US4254445A (en) Discretionary fly wire chip interconnection
US3808475A (en) Lsi chip construction and method
KR0160211B1 (en) Method for forming a monolithic electronic module by dicing wafer sacks
EP0175870B1 (en) Wafer scale integrated circuit device
US6297460B1 (en) Multichip module and method of forming same
US4568961A (en) Variable geometry automated universal array
JPH02106968A (en) Semiconductor integrated circuit device and forming method thereof
US3641661A (en) Method of fabricating integrated circuit arrays
JPH02165652A (en) Semiconductor integrated circuit device
JPH02177345A (en) Semiconductor integrated circuit device
US3771217A (en) Integrated circuit arrays utilizing discretionary wiring and method of fabricating same
US5200580A (en) Configurable multi-chip module interconnect
US5206184A (en) Method of making single layer personalization
JPS6135578A (en) Connection of superconductive circuit
US6444919B1 (en) Thin film wiring scheme utilizing inter-chip site surface wiring
US4134801A (en) Terminal connections on microcircuit chips
JPH03274764A (en) Semiconductor integrated circuit device
JPS63173341A (en) Semiconductor device
JPH01128562A (en) Semiconductor device
JP2003045974A (en) Pattern layout method of superconduction logical integrated circuit
JPS59197151A (en) Semiconductor integrated circuit device
JPS6317346B2 (en)
JPS62128152A (en) Semiconductor integrated circuit device
JPS605059B2 (en) Large-scale semiconductor integrated circuit
JPS6247149A (en) Manufacture of semiconductor integrated circuit

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term