JPS62128152A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS62128152A
JPS62128152A JP26730985A JP26730985A JPS62128152A JP S62128152 A JPS62128152 A JP S62128152A JP 26730985 A JP26730985 A JP 26730985A JP 26730985 A JP26730985 A JP 26730985A JP S62128152 A JPS62128152 A JP S62128152A
Authority
JP
Japan
Prior art keywords
wiring
wirings
channel region
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP26730985A
Other languages
Japanese (ja)
Other versions
JPH0680670B2 (en
Inventor
Michihiko Uemura
植村 吾彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP26730985A priority Critical patent/JPH0680670B2/en
Publication of JPS62128152A publication Critical patent/JPS62128152A/en
Publication of JPH0680670B2 publication Critical patent/JPH0680670B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To prevent the mutual effect of signals between wirings by a method wherein the lattice wiring, consisting of one or more wirings provided in extended form in the longitudinal direction of a wiring channel region and the wiring with which the prescribed potential is supplied by cross-connecting to the wiring on the wiring channel region, is provided and a wiring with which each macro-cell is connected is provided in extended form in the track separated by the lattice wiring. CONSTITUTION:Four paralleled wirings 11 are provided in extended form on a wiring channel region 4 in its longitudinal direction, namely, along X-direction as a first layer wiring, and a wiring 12 orthogonally intersecting with said wirings 11 is provided leaving the interval in the amount of two macro-cells 1 as a second layer wiring. Then, said wirings 11 and 12 are connected to each other by a through hole 13, a lattice wiring 14 is constituted as a whole, and a Y-direction wiring 12 is connected to a GND through the macro-cell 1. As a result, all X-direction wirings 11 can be maintained at the GND potential. Also, as the input-output terminal 3 of each macro- cell 1 is mutually connected, the X-direction wiring 5 consisting of the first layer wiring and the Y-direction wiring 6 consisting of the second layer wiring are provided, and these wirings are mutually connected by a through hole 7.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はマクロセル・アレイ方式を用いた半導体集積回
路装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor integrated circuit device using a macrocell array method.

〔従来の技術〕[Conventional technology]

−Cにマクロセル・アレイ方式の半導体集積回路装置は
、第5図のように複数個のマクロセル1を一方向、例え
ばX方向に配列してマクロセル・アレイ2を構成し、こ
のマクロセル・アレイ2をこれと直角な方向、つまりY
方向に所要の間隔をおいて並設した構成となっている。
-C, a semiconductor integrated circuit device of the macrocell array type has a macrocell array 2 configured by arranging a plurality of macrocells 1 in one direction, for example, the X direction, as shown in FIG. The direction perpendicular to this, that is, Y
The configuration is such that they are arranged in parallel at a required interval in the direction.

前記各マクロセル1はマクロセル・アレイ2の両側に夫
々の入出力端子3を配置させるように配列し、かつ各マ
クロセル・アレイ2の間は配線チャネル領域4としてマ
クロセル1乃至マクロセル・アレイ2の相互配線を施し
得るように構成している。
Each of the macrocells 1 is arranged such that respective input/output terminals 3 are arranged on both sides of the macrocell array 2, and a wiring channel region 4 between each macrocell array 2 is used for mutual wiring between the macrocells 1 and 2. It is configured so that it can be applied.

そして、従来の配線チャネル領域4における配線では、
X方向の配線5は第1層配線で構成し、Y方向の配線6
は第1層配線上に形成した第2層配線で構成し、これら
第1.第2層の配線5,6をスルーホール7において相
互接続するとともに全体として配線面積が最小となるよ
うに回路ノ々り−ンの設計がなされている。
In the conventional wiring in the wiring channel region 4,
The wiring 5 in the X direction is composed of first layer wiring, and the wiring 6 in the Y direction
is composed of second layer wiring formed on the first layer wiring, and these first layer wirings are formed on the first layer wiring. The circuit layout is designed so that the second layer wirings 5 and 6 are interconnected through through holes 7 and the overall wiring area is minimized.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来の半導体集積回路装置は、配線チャネルに
おける第1.第2層の各配線5.6は単に配線面積の点
についてのみ考慮されてパターン設計が行われているの
で、場合によっては2つ以上の異なる配線が長い距離に
亘って近接状態でかつ平行に延設されることがある。こ
のため、これらの隣接配置された配線を通電される信号
が相互に影響を及ぼしあい、半導体集積回路装置の電気
的特性に悪影響を生じさせることがある。
In the conventional semiconductor integrated circuit device described above, the first . Since the pattern design of each wiring 5.6 in the second layer is carried out with consideration only in terms of wiring area, in some cases two or more different wirings may be placed close to each other and parallel to each other over a long distance. It may be extended. Therefore, the signals applied to these adjacent wirings may influence each other, which may adversely affect the electrical characteristics of the semiconductor integrated circuit device.

特に、配線チャネル領域4の長手方向、つまり前述の例
ではX方向に延設される配線間でこの現象は生じ易く、
高周波を取り扱う半導体集積回路装置では隣接配線間の
相互干渉が著しくなり、半導体集積回路装置の特性に重
大な影響を与えることになる。
This phenomenon is particularly likely to occur between wirings extending in the longitudinal direction of the wiring channel region 4, that is, in the X direction in the above example,
In a semiconductor integrated circuit device that handles high frequencies, mutual interference between adjacent wiring lines becomes significant, which seriously affects the characteristics of the semiconductor integrated circuit device.

〔問題点を解決するための手段〕 本発明の半導体集積回路装置は、平行に延設される配線
における各信号間での相互干渉を防止して特性の安定化
及び信頼性の向上を図るものである。
[Means for Solving the Problems] The semiconductor integrated circuit device of the present invention stabilizes characteristics and improves reliability by preventing mutual interference between signals in parallel wiring lines. It is.

本発明の半導体集積回路装置は、配線チャネル領域の長
手方向に延設した1以上の配線と、この配線に交差接続
して所定電位を供給する配線とからなる格子配線を配設
し、この格子配線によって隔絶されるトラック内にマク
ロセル間を接続する配線を延設する構成としている。
The semiconductor integrated circuit device of the present invention has a lattice wiring including one or more wirings extending in the longitudinal direction of the wiring channel region and wirings cross-connected to the wirings to supply a predetermined potential. The configuration is such that wires connecting macro cells extend within tracks separated by the wires.

〔実施例〕〔Example〕

次に、本発明を図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例を示す。図のように複数個の
マクロセル1をX方向に配列してマクロセル・アレイ2
を構成し、このマクロセル・アレイ2を所要間隔おいて
Y方向に並設し各マクロセル・アレイ2間に配線チャネ
ル領域4を構成している。また、各マクロセル1は入出
力端子3がマクロセル・アレイ2の両側に配置されるよ
うにしてアレイを構成している。
FIG. 1 shows an embodiment of the invention. As shown in the figure, a macrocell array 2 is created by arranging a plurality of macrocells 1 in the X direction.
The macrocell arrays 2 are arranged in parallel in the Y direction at required intervals, and a wiring channel region 4 is formed between each macrocell array 2. Further, each macrocell 1 constitutes an array such that input/output terminals 3 are arranged on both sides of the macrocell array 2.

前記配線チャネル領域4には、配線チャネル領域4の長
手方向、つまりX方向に沿って4本の平行な配線11を
第1層配線として延設し、またこれら配線11に直交す
る配線12を第2層配線としてマクロセル1の2個分の
間隔で配設している。
In the wiring channel region 4, four parallel wirings 11 are extended as first-layer wirings along the longitudinal direction of the wiring channel region 4, that is, in the It is arranged as a two-layer wiring at an interval of two macro cells 1.

そして、これら配線11と12とをスルーホール13で
相互に接続して全体として格子配線14を構成し、マク
ロセル1を介してY方向配線12をGNDに接続するこ
とにより、全てのX方向配線11をGND電位に保って
いる。なお、この格子配線14のみを第2図に示してお
り、これにより配線11によってY方向に隔絶されるX
方向の領域(これをトラックと称する)8が5本形成さ
れることが判る。
Then, by connecting these wirings 11 and 12 with each other through through holes 13 to form a lattice wiring 14 as a whole, and connecting the Y-direction wiring 12 to GND via the macro cell 1, all the X-direction wiring 11 is kept at GND potential. Note that only this grid wiring 14 is shown in FIG.
It can be seen that five directional regions (referred to as tracks) 8 are formed.

また、前記配線チャネル領域4には各マクロセル1の入
出力端子3を相互に接続するために第1層配線からなる
X方向の配線5と、第2層配線からなるY方向の配線6
を配設し、夫々をスルーホール7で相互に接続している
。そして、これら配線5,6の中、配線チャネル領域4
の長手方向に沿う配線、即ち本実施例ではX方向の配線
5を前記格子配線14のX方向の配線11間の各トラ・
ツクに夫々配設しており、各配線5は格子配線14の配
線11によってY方向に隔絶されるように構成している
Further, in the wiring channel region 4, in order to mutually connect the input/output terminals 3 of each macro cell 1, there are wirings 5 in the X direction consisting of first layer wirings, and wirings 6 in the Y direction consisting of second layer wirings.
are arranged, and each is connected to each other by a through hole 7. Among these wirings 5 and 6, wiring channel region 4
The wiring along the longitudinal direction, that is, the wiring 5 in the X direction in this embodiment, is connected to each track between the wirings 11 in the X direction of the grid wiring 14.
Each wiring 5 is configured to be isolated in the Y direction by the wiring 11 of the grid wiring 14.

この構成によれば、配線チャネル領域4においてX方向
に延設される配fa5は全てGND電位に保持された配
線11によって隔絶されているので、各配線5は相互に
シールドされた状態とされ、長手方向に延設される隣接
配線間線5での電気的な干渉が防止され、各配線5の信
号の相互影響が防止できる。また、Y方向に隣接する配
線6においてもGND電位に保持されている格子配線1
4のY方向の配線12によって相互に隔絶でき、配線6
の信号間での影響を防止することもできる。
According to this configuration, all the interconnects fa5 extending in the X direction in the interconnect channel region 4 are isolated by the interconnects 11 held at the GND potential, so the interconnects 5 are mutually shielded, Electrical interference between adjacent wires 5 extending in the longitudinal direction is prevented, and mutual influence of signals of each wire 5 can be prevented. In addition, the lattice wiring 1 held at the GND potential also in the wiring 6 adjacent to the Y direction.
They can be isolated from each other by the wiring 12 in the Y direction of No. 4, and the wiring 6
It is also possible to prevent influence between signals.

なお、この実施例では格子配線11を4本設けているの
で、配線チャネル領域4内には5本のトラックが構成さ
れ、X方向配線5を5本並設できることは前述の通りで
ある。
In this embodiment, since four grid wiring lines 11 are provided, five tracks are formed in the wiring channel region 4, and five X-direction wiring lines 5 can be arranged in parallel, as described above.

したがって、配線チャネル領域4において特に長く隣接
する配線5相互間での信号の影響を無くし、半導体集積
回路装置の特性の安定化と信頼性の向上を図ることがで
きる。
Therefore, in the wiring channel region 4, the influence of signals between the long adjacent wirings 5 can be eliminated, and the characteristics of the semiconductor integrated circuit device can be stabilized and the reliability can be improved.

第3図は本発明の他の実施例を示しており、第1図と同
−又は均等な部分には同一符号を附しである。
FIG. 3 shows another embodiment of the present invention, in which the same or equivalent parts as in FIG. 1 are given the same reference numerals.

この実施例では第4図に格子配線14Aのみを示すよう
に、配線チャネル領域4に形成する格子配線14AのX
方向の配線11を3本で構成する一方、両側の配111
a、llaとマクロセル・アレイ2との間には2本のX
方向配線5を延設し得るように構成し、全体として6本
のトラック8Aを構成して夫々にX方向配線5を延設で
きるようにしている。この配billaとマクロセル・
アレイ2との間に設ける配線5には、隣接した場合にも
信号の相互影響が生じない配線を選択して延設すること
になる。信号が相互に影響する配線5は、前例と同様に
格子配線14Aによって隔絶される状態で配線を行うこ
とは言うまでもない。
In this embodiment, as only the grid wiring 14A is shown in FIG.
While the wiring 11 in the direction is composed of three wires, the wiring 111 on both sides
There are two Xs between a and lla and macrocell array 2.
It is constructed so that the direction wiring 5 can be extended, and six tracks 8A are formed as a whole, so that the X-direction wiring 5 can be extended respectively. This distribution billa and macro cell
For the wiring 5 provided between the array 2 and the array 2, a wiring that does not cause mutual influence of signals even when adjacent to each other is selected and extended. It goes without saying that the wiring 5 whose signals mutually influence each other is separated by the grid wiring 14A as in the previous example.

この実施例では前例と同様の効果が得られるとともに、
配線チャネル領域4における格子配線14AのX方向の
配線11が3本でありながら実質的に利用できるトラッ
ク8Aの数を6本とし、マクロセル1の入出力端子3を
相互に接続するX方向の配線5をY方向に6本並設する
ことができ、集積度の向上を進めることができる。
In this example, the same effect as the previous example can be obtained, and
Although there are three wires 11 in the X direction of the lattice wire 14A in the wire channel region 4, the number of tracks 8A that can be practically used is six, and the wires in the X direction interconnect the input/output terminals 3 of the macro cells 1. 5 can be arranged in parallel in the Y direction, and the degree of integration can be improved.

ここで、各X方向配線5は必ずしも格子配線の配線11
によって隔絶された各トランク内に1本のみ延設される
ものではなく、配線チャネル4の長さ方向にずれて配線
される場合には同一トラック内に2本以上延設してもよ
いことは言うまでもない。
Here, each X-direction wiring 5 is not necessarily the wiring 11 of the grid wiring.
It should be noted that it is not necessary to install only one line in each trunk separated by a line, but two or more lines may be placed in the same track if the wiring is shifted in the length direction of the wiring channel 4. Needless to say.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、配線チャネル領域の長手
方向に延設した1以上の配線と、この配線に交差接続し
て所定電位を供給する配線とからなる格子配線を配設し
、この格子配線によって隔絶されるトラック内にマクロ
セル間を接続する配線を夫々延設しているので、この格
子配線によって隣接する配線は相互にシールドされ、こ
れら配線間における信号の相互の影響を防止でき、半4
体集積回路装置の特性の安定化及び信頼性の向上を達成
することができる。
As explained above, the present invention provides a grid wiring consisting of one or more wirings extending in the longitudinal direction of the wiring channel region and wirings cross-connected to the wirings to supply a predetermined potential. Since the wires connecting macro cells are extended in tracks separated by the wires, adjacent wires are shielded from each other by the grid wires, and mutual influence of signals between these wires can be prevented. 4
It is possible to stabilize the characteristics and improve the reliability of the integrated circuit device.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例のレイアウト図、第2図は格
子配線のみを示すレイアウト図、第3図は本発明の他の
実施例のレイアウト図、第4図はその格子配線のみを示
すレイアウト図、第5図は従来のレイアウト図である。 ■・・・マクロセル、2・・・マクロセル・アレイ、3
・・・入出力端子、4・・・配線チャネル領域、5・・
・X方向配線、6・・・Y方向配線、7・・・スルーホ
ール、8゜8A・・・トラック、11.lla・・・(
X方向の)配線、12・・・(Y方向の)配線、13・
・・スルーホール、14.14A・・・格子配線。 第2図 1ム −Y−一一 第3図 第4図
Fig. 1 is a layout diagram of one embodiment of the present invention, Fig. 2 is a layout diagram showing only the grid wiring, Fig. 3 is a layout diagram of another embodiment of the invention, and Fig. 4 is a layout diagram showing only the grid wiring. The layout diagram shown in FIG. 5 is a conventional layout diagram. ■... Macro cell, 2... Macro cell array, 3
...Input/output terminal, 4...Wiring channel area, 5...
・X direction wiring, 6...Y direction wiring, 7...Through hole, 8° 8A...Track, 11. lla...(
Wiring (in the X direction), 12... Wiring (in the Y direction), 13.
...Through hole, 14.14A...grid wiring. Figure 2 1 Mu-Y-11 Figure 3 Figure 4

Claims (1)

【特許請求の範囲】 1、複数個のマクロセルからなるマクロセル・アレイを
複数列に並設し、これらマクロセル・アレイ間に画成し
た配線チャネル領域において前記各マクロセルを相互接
続する半導体集積回路装置において、前記配線チャネル
領域の長手方向に延設した1以上の配線とこの配線に交
差接続する配線とで所定電位に保たれる格子配線を配設
し、前記マクロセル間を接続する配線はこの格子配線に
よって隔絶される複数のトラック内に夫々延設したこと
を特徴とする半導体集積回路装置。 2、配線チャネル領域の長手方向に延設される複数本の
配線を、この長手方向と直角な方向に隔絶されたトラッ
ク内に延設してなる特許請求の範囲第1項記載の半導体
集積回路装置。
[Claims] 1. A semiconductor integrated circuit device in which macrocell arrays each consisting of a plurality of macrocells are arranged in a plurality of rows, and each of the macrocells is interconnected in a wiring channel region defined between the macrocell arrays. , a lattice wiring is provided that is maintained at a predetermined potential by one or more wirings extending in the longitudinal direction of the wiring channel region and wirings cross-connected to the wiring, and the wirings connecting between the macro cells are connected to the lattice wiring. 1. A semiconductor integrated circuit device, characterized in that the semiconductor integrated circuit device is installed in a plurality of tracks separated by a plurality of tracks. 2. A semiconductor integrated circuit according to claim 1, in which a plurality of wires extending in the longitudinal direction of the wiring channel region are arranged in tracks separated in a direction perpendicular to the longitudinal direction. Device.
JP26730985A 1985-11-29 1985-11-29 Semiconductor integrated circuit device Expired - Fee Related JPH0680670B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26730985A JPH0680670B2 (en) 1985-11-29 1985-11-29 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26730985A JPH0680670B2 (en) 1985-11-29 1985-11-29 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS62128152A true JPS62128152A (en) 1987-06-10
JPH0680670B2 JPH0680670B2 (en) 1994-10-12

Family

ID=17443033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26730985A Expired - Fee Related JPH0680670B2 (en) 1985-11-29 1985-11-29 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPH0680670B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02278828A (en) * 1989-04-20 1990-11-15 Fujitsu Ltd Wiring of semiconductor device
JPH02284449A (en) * 1989-04-25 1990-11-21 Nec Corp Bus-line type semiconductor storage device
US5063430A (en) * 1989-04-27 1991-11-05 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device having standard cells including internal wiring region

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02278828A (en) * 1989-04-20 1990-11-15 Fujitsu Ltd Wiring of semiconductor device
JPH02284449A (en) * 1989-04-25 1990-11-21 Nec Corp Bus-line type semiconductor storage device
JP2776551B2 (en) * 1989-04-25 1998-07-16 日本電気株式会社 Bus line type semiconductor memory device
US5063430A (en) * 1989-04-27 1991-11-05 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device having standard cells including internal wiring region

Also Published As

Publication number Publication date
JPH0680670B2 (en) 1994-10-12

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