JPS5818785B2 - シユウセキカイロソウチノ セイゾウホウホウ - Google Patents

シユウセキカイロソウチノ セイゾウホウホウ

Info

Publication number
JPS5818785B2
JPS5818785B2 JP48114199A JP11419973A JPS5818785B2 JP S5818785 B2 JPS5818785 B2 JP S5818785B2 JP 48114199 A JP48114199 A JP 48114199A JP 11419973 A JP11419973 A JP 11419973A JP S5818785 B2 JPS5818785 B2 JP S5818785B2
Authority
JP
Japan
Prior art keywords
insulating film
region
implanted
semiconductor substrate
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP48114199A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5065179A (enrdf_load_stackoverflow
Inventor
鴨志田元孝
中村邦雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP48114199A priority Critical patent/JPS5818785B2/ja
Publication of JPS5065179A publication Critical patent/JPS5065179A/ja
Publication of JPS5818785B2 publication Critical patent/JPS5818785B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
JP48114199A 1973-10-09 1973-10-09 シユウセキカイロソウチノ セイゾウホウホウ Expired JPS5818785B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP48114199A JPS5818785B2 (ja) 1973-10-09 1973-10-09 シユウセキカイロソウチノ セイゾウホウホウ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48114199A JPS5818785B2 (ja) 1973-10-09 1973-10-09 シユウセキカイロソウチノ セイゾウホウホウ

Publications (2)

Publication Number Publication Date
JPS5065179A JPS5065179A (enrdf_load_stackoverflow) 1975-06-02
JPS5818785B2 true JPS5818785B2 (ja) 1983-04-14

Family

ID=14631672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48114199A Expired JPS5818785B2 (ja) 1973-10-09 1973-10-09 シユウセキカイロソウチノ セイゾウホウホウ

Country Status (1)

Country Link
JP (1) JPS5818785B2 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63128093U (enrdf_load_stackoverflow) * 1987-02-13 1988-08-22

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5362986A (en) * 1976-11-18 1978-06-05 Toshiba Corp Semiconductor device
JPS5384571A (en) * 1976-12-29 1978-07-26 Fujitsu Ltd Insulating gate type field effect transistor and its manufacture
JPS56155572A (en) * 1980-04-30 1981-12-01 Sanyo Electric Co Ltd Insulated gate field effect type semiconductor device
JPS62271450A (ja) * 1987-04-24 1987-11-25 Hitachi Ltd 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5527462B2 (enrdf_load_stackoverflow) * 1972-11-08 1980-07-21

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63128093U (enrdf_load_stackoverflow) * 1987-02-13 1988-08-22

Also Published As

Publication number Publication date
JPS5065179A (enrdf_load_stackoverflow) 1975-06-02

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