JPS58185773A - ドライエツチング方法 - Google Patents

ドライエツチング方法

Info

Publication number
JPS58185773A
JPS58185773A JP6660382A JP6660382A JPS58185773A JP S58185773 A JPS58185773 A JP S58185773A JP 6660382 A JP6660382 A JP 6660382A JP 6660382 A JP6660382 A JP 6660382A JP S58185773 A JPS58185773 A JP S58185773A
Authority
JP
Japan
Prior art keywords
sample
cathode
electrostatic chuck
dry etching
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6660382A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0518908B2 (esLanguage
Inventor
Haruo Okano
晴雄 岡野
Takashi Yamazaki
隆 山崎
Yasuhiro Horiike
靖浩 堀池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6660382A priority Critical patent/JPS58185773A/ja
Publication of JPS58185773A publication Critical patent/JPS58185773A/ja
Publication of JPH0518908B2 publication Critical patent/JPH0518908B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP6660382A 1982-04-21 1982-04-21 ドライエツチング方法 Granted JPS58185773A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6660382A JPS58185773A (ja) 1982-04-21 1982-04-21 ドライエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6660382A JPS58185773A (ja) 1982-04-21 1982-04-21 ドライエツチング方法

Publications (2)

Publication Number Publication Date
JPS58185773A true JPS58185773A (ja) 1983-10-29
JPH0518908B2 JPH0518908B2 (esLanguage) 1993-03-15

Family

ID=13320646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6660382A Granted JPS58185773A (ja) 1982-04-21 1982-04-21 ドライエツチング方法

Country Status (1)

Country Link
JP (1) JPS58185773A (esLanguage)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02110927A (ja) * 1989-09-27 1990-04-24 Hitachi Ltd 真空処理装置の試料保持方法
JPH02110926A (ja) * 1989-09-27 1990-04-24 Hitachi Ltd 試料の温度制御方法及び装置
JPH02110925A (ja) * 1989-09-27 1990-04-24 Hitachi Ltd 真空処理装置
JPH04137529A (ja) * 1990-09-27 1992-05-12 Oki Electric Ind Co Ltd ドライプロセス装置
JPH04354867A (ja) * 1991-05-31 1992-12-09 Hitachi Ltd プラズマ処理装置
KR100463782B1 (ko) * 1995-09-20 2005-04-28 가부시끼가이샤 히다치 세이사꾸쇼 정전흡착전극및그제작방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55115047U (esLanguage) * 1979-02-06 1980-08-13
JPS5647574A (en) * 1979-09-28 1981-04-30 Toshiba Corp Plasma etching apparatus
JPS577935A (en) * 1980-06-19 1982-01-16 Fujitsu Ltd Method for dry etching
JPS5760074A (en) * 1980-09-30 1982-04-10 Fujitsu Ltd Dry etching method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55115047U (esLanguage) * 1979-02-06 1980-08-13
JPS5647574A (en) * 1979-09-28 1981-04-30 Toshiba Corp Plasma etching apparatus
JPS577935A (en) * 1980-06-19 1982-01-16 Fujitsu Ltd Method for dry etching
JPS5760074A (en) * 1980-09-30 1982-04-10 Fujitsu Ltd Dry etching method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02110927A (ja) * 1989-09-27 1990-04-24 Hitachi Ltd 真空処理装置の試料保持方法
JPH02110926A (ja) * 1989-09-27 1990-04-24 Hitachi Ltd 試料の温度制御方法及び装置
JPH02110925A (ja) * 1989-09-27 1990-04-24 Hitachi Ltd 真空処理装置
JPH04137529A (ja) * 1990-09-27 1992-05-12 Oki Electric Ind Co Ltd ドライプロセス装置
JPH04354867A (ja) * 1991-05-31 1992-12-09 Hitachi Ltd プラズマ処理装置
KR100463782B1 (ko) * 1995-09-20 2005-04-28 가부시끼가이샤 히다치 세이사꾸쇼 정전흡착전극및그제작방법

Also Published As

Publication number Publication date
JPH0518908B2 (esLanguage) 1993-03-15

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