JPS58184A - 絶縁ゲ−ト形半導体装置の製造方法 - Google Patents

絶縁ゲ−ト形半導体装置の製造方法

Info

Publication number
JPS58184A
JPS58184A JP57065341A JP6534182A JPS58184A JP S58184 A JPS58184 A JP S58184A JP 57065341 A JP57065341 A JP 57065341A JP 6534182 A JP6534182 A JP 6534182A JP S58184 A JPS58184 A JP S58184A
Authority
JP
Japan
Prior art keywords
film
pad
insulating film
substrate
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57065341A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62591B2 (https=
Inventor
Akihiro Tomosawa
友沢　明弘
Makoto Kaburagi
鏑木　誠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57065341A priority Critical patent/JPS58184A/ja
Publication of JPS58184A publication Critical patent/JPS58184A/ja
Publication of JPS62591B2 publication Critical patent/JPS62591B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57065341A 1982-04-21 1982-04-21 絶縁ゲ−ト形半導体装置の製造方法 Granted JPS58184A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57065341A JPS58184A (ja) 1982-04-21 1982-04-21 絶縁ゲ−ト形半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57065341A JPS58184A (ja) 1982-04-21 1982-04-21 絶縁ゲ−ト形半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP50047536A Division JPS5846851B2 (ja) 1975-04-21 1975-04-21 半導体装置

Publications (2)

Publication Number Publication Date
JPS58184A true JPS58184A (ja) 1983-01-05
JPS62591B2 JPS62591B2 (https=) 1987-01-08

Family

ID=13284141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57065341A Granted JPS58184A (ja) 1982-04-21 1982-04-21 絶縁ゲ−ト形半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58184A (https=)

Also Published As

Publication number Publication date
JPS62591B2 (https=) 1987-01-08

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