JPS58182271A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58182271A
JPS58182271A JP57064684A JP6468482A JPS58182271A JP S58182271 A JPS58182271 A JP S58182271A JP 57064684 A JP57064684 A JP 57064684A JP 6468482 A JP6468482 A JP 6468482A JP S58182271 A JPS58182271 A JP S58182271A
Authority
JP
Japan
Prior art keywords
gate
gate electrode
transistor
semiconductor device
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57064684A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0572109B2 (enExample
Inventor
Hiroyuki Kinoshita
弘行 木下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57064684A priority Critical patent/JPS58182271A/ja
Priority to DE8383101657T priority patent/DE3382294D1/de
Priority to EP83101657A priority patent/EP0087155B1/en
Publication of JPS58182271A publication Critical patent/JPS58182271A/ja
Priority to US07/565,215 priority patent/US5113230A/en
Publication of JPH0572109B2 publication Critical patent/JPH0572109B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
JP57064684A 1982-02-22 1982-04-20 半導体装置 Granted JPS58182271A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57064684A JPS58182271A (ja) 1982-04-20 1982-04-20 半導体装置
DE8383101657T DE3382294D1 (de) 1982-02-22 1983-02-21 Mittel zum verhindern des durchbruchs einer isolierschicht in halbleiteranordnungen.
EP83101657A EP0087155B1 (en) 1982-02-22 1983-02-21 Means for preventing the breakdown of an insulation layer in semiconductor devices
US07/565,215 US5113230A (en) 1982-02-22 1990-08-08 Semiconductor device having a conductive layer for preventing insulation layer destruction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57064684A JPS58182271A (ja) 1982-04-20 1982-04-20 半導体装置

Publications (2)

Publication Number Publication Date
JPS58182271A true JPS58182271A (ja) 1983-10-25
JPH0572109B2 JPH0572109B2 (enExample) 1993-10-08

Family

ID=13265226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57064684A Granted JPS58182271A (ja) 1982-02-22 1982-04-20 半導体装置

Country Status (1)

Country Link
JP (1) JPS58182271A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS634666A (ja) * 1986-06-25 1988-01-09 Hitachi Ltd 半導体集積回路装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50156884A (enExample) * 1974-06-07 1975-12-18

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50156884A (enExample) * 1974-06-07 1975-12-18

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS634666A (ja) * 1986-06-25 1988-01-09 Hitachi Ltd 半導体集積回路装置

Also Published As

Publication number Publication date
JPH0572109B2 (enExample) 1993-10-08

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