JPS58177591A - スタテイツク型半導体記憶装置 - Google Patents

スタテイツク型半導体記憶装置

Info

Publication number
JPS58177591A
JPS58177591A JP57059763A JP5976382A JPS58177591A JP S58177591 A JPS58177591 A JP S58177591A JP 57059763 A JP57059763 A JP 57059763A JP 5976382 A JP5976382 A JP 5976382A JP S58177591 A JPS58177591 A JP S58177591A
Authority
JP
Japan
Prior art keywords
memory
holding current
memory cell
current
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57059763A
Other languages
English (en)
Japanese (ja)
Other versions
JPH043036B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Masayoshi Kimoto
木本　雅義
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57059763A priority Critical patent/JPS58177591A/ja
Priority to US06/482,301 priority patent/US4604729A/en
Priority to DE8383302037T priority patent/DE3378937D1/de
Priority to EP83302037A priority patent/EP0091815B1/en
Publication of JPS58177591A publication Critical patent/JPS58177591A/ja
Publication of JPH043036B2 publication Critical patent/JPH043036B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/005—Circuit means for protection against loss of information of semiconductor storage devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP57059763A 1982-04-12 1982-04-12 スタテイツク型半導体記憶装置 Granted JPS58177591A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57059763A JPS58177591A (ja) 1982-04-12 1982-04-12 スタテイツク型半導体記憶装置
US06/482,301 US4604729A (en) 1982-04-12 1983-04-05 Static-type semiconductor memory device
DE8383302037T DE3378937D1 (en) 1982-04-12 1983-04-12 Static-type semiconductor memory device
EP83302037A EP0091815B1 (en) 1982-04-12 1983-04-12 Static-type semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57059763A JPS58177591A (ja) 1982-04-12 1982-04-12 スタテイツク型半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS58177591A true JPS58177591A (ja) 1983-10-18
JPH043036B2 JPH043036B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-01-21

Family

ID=13122630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57059763A Granted JPS58177591A (ja) 1982-04-12 1982-04-12 スタテイツク型半導体記憶装置

Country Status (4)

Country Link
US (1) US4604729A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0091815B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS58177591A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3378937D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59167895A (ja) * 1983-03-14 1984-09-21 Nec Corp 半導体メモリ回路

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4796227A (en) * 1987-03-17 1989-01-03 Schlumberger Systems And Services, Inc. Computer memory system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712481A (en) * 1980-06-26 1982-01-22 Mitsubishi Electric Corp Semiconductor memory device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4198698A (en) * 1978-12-06 1980-04-15 Fairchild Camera And Instrument Corporation Chip select power-down control circuitry
JPS5831673B2 (ja) * 1979-08-22 1983-07-07 富士通株式会社 半導体記憶装置
JPS5847793B2 (ja) * 1979-11-12 1983-10-25 富士通株式会社 半導体記憶装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712481A (en) * 1980-06-26 1982-01-22 Mitsubishi Electric Corp Semiconductor memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59167895A (ja) * 1983-03-14 1984-09-21 Nec Corp 半導体メモリ回路

Also Published As

Publication number Publication date
US4604729A (en) 1986-08-05
EP0091815A3 (en) 1986-02-05
EP0091815A2 (en) 1983-10-19
EP0091815B1 (en) 1989-01-11
JPH043036B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-01-21
DE3378937D1 (en) 1989-02-16

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