JPH043036B2 - - Google Patents

Info

Publication number
JPH043036B2
JPH043036B2 JP57059763A JP5976382A JPH043036B2 JP H043036 B2 JPH043036 B2 JP H043036B2 JP 57059763 A JP57059763 A JP 57059763A JP 5976382 A JP5976382 A JP 5976382A JP H043036 B2 JPH043036 B2 JP H043036B2
Authority
JP
Japan
Prior art keywords
memory
chip
memory cell
holding current
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57059763A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58177591A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57059763A priority Critical patent/JPS58177591A/ja
Priority to US06/482,301 priority patent/US4604729A/en
Priority to DE8383302037T priority patent/DE3378937D1/de
Priority to EP83302037A priority patent/EP0091815B1/en
Publication of JPS58177591A publication Critical patent/JPS58177591A/ja
Publication of JPH043036B2 publication Critical patent/JPH043036B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/005Circuit means for protection against loss of information of semiconductor storage devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416Read-write [R-W] circuits 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP57059763A 1982-04-12 1982-04-12 スタテイツク型半導体記憶装置 Granted JPS58177591A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57059763A JPS58177591A (ja) 1982-04-12 1982-04-12 スタテイツク型半導体記憶装置
US06/482,301 US4604729A (en) 1982-04-12 1983-04-05 Static-type semiconductor memory device
DE8383302037T DE3378937D1 (en) 1982-04-12 1983-04-12 Static-type semiconductor memory device
EP83302037A EP0091815B1 (en) 1982-04-12 1983-04-12 Static-type semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57059763A JPS58177591A (ja) 1982-04-12 1982-04-12 スタテイツク型半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS58177591A JPS58177591A (ja) 1983-10-18
JPH043036B2 true JPH043036B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-01-21

Family

ID=13122630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57059763A Granted JPS58177591A (ja) 1982-04-12 1982-04-12 スタテイツク型半導体記憶装置

Country Status (4)

Country Link
US (1) US4604729A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0091815B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS58177591A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3378937D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59167895A (ja) * 1983-03-14 1984-09-21 Nec Corp 半導体メモリ回路
US4796227A (en) * 1987-03-17 1989-01-03 Schlumberger Systems And Services, Inc. Computer memory system

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4198698A (en) * 1978-12-06 1980-04-15 Fairchild Camera And Instrument Corporation Chip select power-down control circuitry
JPS5831673B2 (ja) * 1979-08-22 1983-07-07 富士通株式会社 半導体記憶装置
JPS5847793B2 (ja) * 1979-11-12 1983-10-25 富士通株式会社 半導体記憶装置
JPS5712481A (en) * 1980-06-26 1982-01-22 Mitsubishi Electric Corp Semiconductor memory device

Also Published As

Publication number Publication date
US4604729A (en) 1986-08-05
EP0091815A3 (en) 1986-02-05
EP0091815A2 (en) 1983-10-19
EP0091815B1 (en) 1989-01-11
JPS58177591A (ja) 1983-10-18
DE3378937D1 (en) 1989-02-16

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