JPS58176928A - 光アニ−ル方法 - Google Patents

光アニ−ル方法

Info

Publication number
JPS58176928A
JPS58176928A JP57059247A JP5924782A JPS58176928A JP S58176928 A JPS58176928 A JP S58176928A JP 57059247 A JP57059247 A JP 57059247A JP 5924782 A JP5924782 A JP 5924782A JP S58176928 A JPS58176928 A JP S58176928A
Authority
JP
Japan
Prior art keywords
infrared
substrate
polycrystalline
processed substrate
flat plates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57059247A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0351091B2 (enExample
Inventor
Junji Sakurai
桜井　潤治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57059247A priority Critical patent/JPS58176928A/ja
Publication of JPS58176928A publication Critical patent/JPS58176928A/ja
Publication of JPH0351091B2 publication Critical patent/JPH0351091B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices

Landscapes

  • Recrystallisation Techniques (AREA)
JP57059247A 1982-04-09 1982-04-09 光アニ−ル方法 Granted JPS58176928A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57059247A JPS58176928A (ja) 1982-04-09 1982-04-09 光アニ−ル方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57059247A JPS58176928A (ja) 1982-04-09 1982-04-09 光アニ−ル方法

Publications (2)

Publication Number Publication Date
JPS58176928A true JPS58176928A (ja) 1983-10-17
JPH0351091B2 JPH0351091B2 (enExample) 1991-08-05

Family

ID=13107857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57059247A Granted JPS58176928A (ja) 1982-04-09 1982-04-09 光アニ−ル方法

Country Status (1)

Country Link
JP (1) JPS58176928A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02144973A (ja) * 1988-11-26 1990-06-04 Toko Inc 可変容量ダイオード素子の製造方法
US7410850B2 (en) 1997-03-11 2008-08-12 Semiconductor Energy Laboratory Co., Ltd. Heating treatment device, heating treatment method and fabrication method of semiconductor device
WO2009116763A1 (ko) * 2008-03-17 2009-09-24 주식회사 티지솔라 열처리 방법

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02144973A (ja) * 1988-11-26 1990-06-04 Toko Inc 可変容量ダイオード素子の製造方法
US7410850B2 (en) 1997-03-11 2008-08-12 Semiconductor Energy Laboratory Co., Ltd. Heating treatment device, heating treatment method and fabrication method of semiconductor device
WO2009116763A1 (ko) * 2008-03-17 2009-09-24 주식회사 티지솔라 열처리 방법
JP2011515831A (ja) * 2008-03-17 2011-05-19 ティージー ソーラー コーポレイション 熱処理方法
US8030225B2 (en) 2008-03-17 2011-10-04 Tg Solar Corporation Heat treatment method for preventing substrate deformation

Also Published As

Publication number Publication date
JPH0351091B2 (enExample) 1991-08-05

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