JPS58176928A - 光アニ−ル方法 - Google Patents

光アニ−ル方法

Info

Publication number
JPS58176928A
JPS58176928A JP5924782A JP5924782A JPS58176928A JP S58176928 A JPS58176928 A JP S58176928A JP 5924782 A JP5924782 A JP 5924782A JP 5924782 A JP5924782 A JP 5924782A JP S58176928 A JPS58176928 A JP S58176928A
Authority
JP
Japan
Prior art keywords
substrate
infrared
annealing
processed
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5924782A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0351091B2 (enrdf_load_stackoverflow
Inventor
Junji Sakurai
桜井　潤治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5924782A priority Critical patent/JPS58176928A/ja
Publication of JPS58176928A publication Critical patent/JPS58176928A/ja
Publication of JPH0351091B2 publication Critical patent/JPH0351091B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP5924782A 1982-04-09 1982-04-09 光アニ−ル方法 Granted JPS58176928A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5924782A JPS58176928A (ja) 1982-04-09 1982-04-09 光アニ−ル方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5924782A JPS58176928A (ja) 1982-04-09 1982-04-09 光アニ−ル方法

Publications (2)

Publication Number Publication Date
JPS58176928A true JPS58176928A (ja) 1983-10-17
JPH0351091B2 JPH0351091B2 (enrdf_load_stackoverflow) 1991-08-05

Family

ID=13107857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5924782A Granted JPS58176928A (ja) 1982-04-09 1982-04-09 光アニ−ル方法

Country Status (1)

Country Link
JP (1) JPS58176928A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02144973A (ja) * 1988-11-26 1990-06-04 Toko Inc 可変容量ダイオード素子の製造方法
US7410850B2 (en) 1997-03-11 2008-08-12 Semiconductor Energy Laboratory Co., Ltd. Heating treatment device, heating treatment method and fabrication method of semiconductor device
WO2009116763A1 (ko) * 2008-03-17 2009-09-24 주식회사 티지솔라 열처리 방법

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02144973A (ja) * 1988-11-26 1990-06-04 Toko Inc 可変容量ダイオード素子の製造方法
US7410850B2 (en) 1997-03-11 2008-08-12 Semiconductor Energy Laboratory Co., Ltd. Heating treatment device, heating treatment method and fabrication method of semiconductor device
WO2009116763A1 (ko) * 2008-03-17 2009-09-24 주식회사 티지솔라 열처리 방법
JP2011515831A (ja) * 2008-03-17 2011-05-19 ティージー ソーラー コーポレイション 熱処理方法
US8030225B2 (en) 2008-03-17 2011-10-04 Tg Solar Corporation Heat treatment method for preventing substrate deformation

Also Published As

Publication number Publication date
JPH0351091B2 (enrdf_load_stackoverflow) 1991-08-05

Similar Documents

Publication Publication Date Title
WO1993019484A1 (en) Rapid thermal annealing using thermally conductive overcoat
JPS58223320A (ja) 不純物拡散方法
EP0124261A1 (en) Process for producing monocrystalline layer on insulator
JPH06318558A (ja) ランプアニール装置
JPS58176928A (ja) 光アニ−ル方法
JPS61116820A (ja) 半導体のアニ−ル方法
JPH0377657B2 (enrdf_load_stackoverflow)
JPH0420254B2 (enrdf_load_stackoverflow)
JPH025295B2 (enrdf_load_stackoverflow)
JP2002124483A (ja) 熱処理装置およびそれを用いた熱処理方法と成膜方法
JPH01152718A (ja) 半導体製造装置
JPH01110726A (ja) ランプアニール方法
JPS59139624A (ja) 試料の加熱方法
JPS63257221A (ja) ランプアニ−ル装置
JP2601682B2 (ja) ビームアニール方法およびビームアニール装置
JPS6092607A (ja) 電子ビ−ムアニ−ル装置
JPS62299011A (ja) 多結晶薄膜基板のアニ−ル方法
JPS5961137A (ja) 半導体装置の製造方法
JPS6175517A (ja) 化合物半導体基板のアニ−ル法
JPH0210569B2 (enrdf_load_stackoverflow)
JPS63265424A (ja) 透明基板の選択的加熱方法
JP2612722B2 (ja) 半導体装置の製造方法
JPH08293466A (ja) 半導体薄膜の製造方法
JPS6244847B2 (enrdf_load_stackoverflow)
JPS5837919A (ja) 半導体装置の製造方法