JPS58176924A - 純粋な半導体材料の製法及びその装置 - Google Patents
純粋な半導体材料の製法及びその装置Info
- Publication number
- JPS58176924A JPS58176924A JP58050573A JP5057383A JPS58176924A JP S58176924 A JPS58176924 A JP S58176924A JP 58050573 A JP58050573 A JP 58050573A JP 5057383 A JP5057383 A JP 5057383A JP S58176924 A JPS58176924 A JP S58176924A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor material
- bell
- base plate
- thin rod
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 17
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 239000000463 material Substances 0.000 title claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 10
- 239000002826 coolant Substances 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 238000000354 decomposition reaction Methods 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000003921 oil Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 3
- 239000005052 trichlorosilane Substances 0.000 claims description 3
- 239000000110 cooling liquid Substances 0.000 claims description 2
- 239000011796 hollow space material Substances 0.000 claims 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims 1
- 239000005046 Chlorosilane Substances 0.000 claims 1
- 238000009835 boiling Methods 0.000 claims 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 239000005049 silicon tetrachloride Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 238000001556 precipitation Methods 0.000 description 12
- 239000010453 quartz Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 150000003377 silicon compounds Chemical class 0.000 description 7
- 229910000831 Steel Inorganic materials 0.000 description 5
- 239000010959 steel Substances 0.000 description 5
- 239000010439 graphite Chemical group 0.000 description 3
- 229910002804 graphite Chemical group 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- WLKVBNIHWHTLAI-XNJYKOPJSA-N gazer Chemical compound N=1C=NC=2N(C3C(C(O)C(CO)O3)O)C=NC=2C=1NC\C=C(/C)COC(C(C1OC2C(C(OC3C(C(O)C(O)C(CO)O3)OC3C(C(O)C(O)C(CO)O3)O)C(CO)O2)O)O)OC(CO)C1OC1OCC(O)C(O)C1O WLKVBNIHWHTLAI-XNJYKOPJSA-N 0.000 description 1
- LHDGISWXLILHQA-UHFFFAOYSA-N gazer Natural products CC(=C/CNc1ncnc2c1ncn2C3OC(CO)C(O)C3O)COC4OC(CO)C(OC5OC(CO)C(O)C5O)C(OC6OC(CO)C(OC7OC(CO)C(O)C(O)C7OC8OC(CO)C(O)C(O)C8O)C6O)C4O LHDGISWXLILHQA-UHFFFAOYSA-N 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT48113A/82 | 1982-03-29 | ||
| IT48113/82A IT1147832B (it) | 1982-03-29 | 1982-03-29 | Apparecchio e procedimento per la produzione di materiali semiconduttori iperpuri |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58176924A true JPS58176924A (ja) | 1983-10-17 |
Family
ID=11264599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58050573A Pending JPS58176924A (ja) | 1982-03-29 | 1983-03-28 | 純粋な半導体材料の製法及びその装置 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0090321A3 (fr) |
| JP (1) | JPS58176924A (fr) |
| DK (1) | DK155955C (fr) |
| IT (1) | IT1147832B (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011057526A (ja) * | 2009-09-14 | 2011-03-24 | Shin-Etsu Chemical Co Ltd | 多結晶シリコン製造用反応炉、多結晶シリコン製造システム、および多結晶シリコンの製造方法 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6169962A (ja) * | 1984-09-13 | 1986-04-10 | Agency Of Ind Science & Technol | 霧化薄膜作製装置 |
| DE69126724T2 (de) * | 1990-03-19 | 1998-01-15 | Toshiba Kawasaki Kk | Vorrichtung zur Dampfphasenabscheidung |
| JPH04175294A (ja) * | 1990-11-09 | 1992-06-23 | Fujitsu Ltd | 気相成長装置 |
| US7732012B2 (en) | 2004-06-22 | 2010-06-08 | Shin-Etsu Film Co., Ltd | Method for manufacturing polycrystalline silicon, and polycrystalline silicon for solar cells manufactured by the method |
| WO2012012457A2 (fr) | 2010-07-19 | 2012-01-26 | Rec Silicon Inc | Production de silicium polycristallin |
| DE102015200070A1 (de) | 2015-01-07 | 2016-07-07 | Wacker Chemie Ag | Reaktor zur Abscheidung von polykristallinem Silicium |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55132035A (en) * | 1979-03-30 | 1980-10-14 | Wacker Chemitronic | Pure semiconductor material* method of precipitating silidon and nozzle for executing same method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1341482A (fr) * | 1960-02-23 | 1963-11-02 | Siemens Ag | Procédé de fabrication d'un matériau semi-conducteur de grande pureté, en particulier de silicium |
| US3717439A (en) * | 1970-11-18 | 1973-02-20 | Tokyo Shibaura Electric Co | Vapour phase reaction apparatus |
| US4173944A (en) * | 1977-05-20 | 1979-11-13 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Silverplated vapor deposition chamber |
| DD156273A1 (de) * | 1981-02-11 | 1982-08-11 | Hans Kraemer | Verfahren zur herstellung von polykristallinem silizium |
-
1982
- 1982-03-29 IT IT48113/82A patent/IT1147832B/it active
-
1983
- 1983-03-22 EP EP83102810A patent/EP0090321A3/fr not_active Ceased
- 1983-03-28 JP JP58050573A patent/JPS58176924A/ja active Pending
- 1983-03-28 DK DK141183A patent/DK155955C/da not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55132035A (en) * | 1979-03-30 | 1980-10-14 | Wacker Chemitronic | Pure semiconductor material* method of precipitating silidon and nozzle for executing same method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011057526A (ja) * | 2009-09-14 | 2011-03-24 | Shin-Etsu Chemical Co Ltd | 多結晶シリコン製造用反応炉、多結晶シリコン製造システム、および多結晶シリコンの製造方法 |
| US9193596B2 (en) | 2009-09-14 | 2015-11-24 | Shin-Etsu Chemical Co., Ltd. | Reactor for producing polycrystalline silicon, system for producing polycrystalline silicon, and process for producing polycrystalline silicon |
Also Published As
| Publication number | Publication date |
|---|---|
| DK141183D0 (da) | 1983-03-28 |
| IT1147832B (it) | 1986-11-26 |
| EP0090321A3 (fr) | 1986-05-14 |
| DK155955C (da) | 1989-10-23 |
| DK141183A (da) | 1983-09-30 |
| IT8248113A0 (it) | 1982-03-29 |
| EP0090321A2 (fr) | 1983-10-05 |
| DK155955B (da) | 1989-06-05 |
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