JPS58170078A - 半導体受光装置 - Google Patents

半導体受光装置

Info

Publication number
JPS58170078A
JPS58170078A JP57053120A JP5312082A JPS58170078A JP S58170078 A JPS58170078 A JP S58170078A JP 57053120 A JP57053120 A JP 57053120A JP 5312082 A JP5312082 A JP 5312082A JP S58170078 A JPS58170078 A JP S58170078A
Authority
JP
Japan
Prior art keywords
layer
apd
hours
curve
multiplication factor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57053120A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6259906B2 (enrdf_load_stackoverflow
Inventor
Takashi Mikawa
孝 三川
Takao Kaneda
隆夫 金田
Shuzo Kagawa
修三 香川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57053120A priority Critical patent/JPS58170078A/ja
Publication of JPS58170078A publication Critical patent/JPS58170078A/ja
Publication of JPS6259906B2 publication Critical patent/JPS6259906B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Light Receiving Elements (AREA)
JP57053120A 1982-03-31 1982-03-31 半導体受光装置 Granted JPS58170078A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57053120A JPS58170078A (ja) 1982-03-31 1982-03-31 半導体受光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57053120A JPS58170078A (ja) 1982-03-31 1982-03-31 半導体受光装置

Publications (2)

Publication Number Publication Date
JPS58170078A true JPS58170078A (ja) 1983-10-06
JPS6259906B2 JPS6259906B2 (enrdf_load_stackoverflow) 1987-12-14

Family

ID=12933937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57053120A Granted JPS58170078A (ja) 1982-03-31 1982-03-31 半導体受光装置

Country Status (1)

Country Link
JP (1) JPS58170078A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101091205B1 (ko) * 2010-03-30 2011-12-09 이화여자대학교 산학협력단 암전류가 감소된 실리콘 광전자 증배관
WO2011122856A3 (ko) * 2010-03-30 2011-12-29 이화여자대학교 산학협력단 실리콘 광증배 소자
CN105097964A (zh) * 2015-07-21 2015-11-25 中国电子科技集团公司第三十八研究所 一种有源区高斯掺杂型pπn紫外探测器
JP2023543735A (ja) * 2020-09-22 2023-10-18 コンセホ スペリオール デ インベスティガシオネス シエンティフィカス（セエセイセ） 低侵入性粒子低利得アバランシェ検出器

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2838906B2 (ja) * 1989-08-04 1998-12-16 キヤノン株式会社 光電変換装置
US7120347B2 (en) 2004-01-27 2006-10-10 Corning Cable Systems Llc Multi-port optical connection terminal
US7489849B2 (en) 2004-11-03 2009-02-10 Adc Telecommunications, Inc. Fiber drop terminal
US7565055B2 (en) 2005-04-19 2009-07-21 Adc Telecommunications, Inc. Loop back plug and method
US7418177B2 (en) 2005-11-10 2008-08-26 Adc Telecommunications, Inc. Fiber optic cable breakout system, packaging arrangement, and method of installation
US7590321B2 (en) 2006-03-09 2009-09-15 Adc Telecommunications, Inc. Mid-span breakout with helical fiber routing
US7424189B2 (en) 2006-03-09 2008-09-09 Adc Telecommunications, Inc. Mid-span breakout with potted closure
US7317863B2 (en) 2006-03-09 2008-01-08 Adc Telecommunications, Inc. Fiber optic cable breakout configuration with retention block
US7422378B2 (en) 2006-03-09 2008-09-09 Adc Telecommunications, Inc. Fiber optic cable breakout configuration with excess fiber length
US7251411B1 (en) 2006-03-09 2007-07-31 Adc Telecommunication, Inc. Fiber optic cable breakout configuration with “Y” block
US7599598B2 (en) 2006-08-09 2009-10-06 Adc Telecommunications, Inc. Cable payout systems and methods
WO2008021253A2 (en) 2006-08-14 2008-02-21 Adc Telecommunications, Inc. Factory spliced cable assembly
US7289714B1 (en) 2006-09-26 2007-10-30 Adc Telecommunication, Inc. Tubing wrap procedure
US7480436B2 (en) 2006-10-10 2009-01-20 Adc Telecommunications, Inc. Systems and methods for securing a tether to a distribution cable
US7403685B2 (en) 2006-10-13 2008-07-22 Adc Telecommunications, Inc. Overmold zip strip
US7489843B2 (en) 2007-02-06 2009-02-10 Adc Telecommunications, Inc. Polyurethane to polyethylene adhesion process
US7558458B2 (en) 2007-03-08 2009-07-07 Adc Telecommunications, Inc. Universal bracket for mounting a drop terminal
US7532799B2 (en) 2007-04-12 2009-05-12 Adc Telecommunications Fiber optic telecommunications cable assembly
US7609925B2 (en) 2007-04-12 2009-10-27 Adc Telecommunications, Inc. Fiber optic cable breakout configuration with tensile reinforcement
US8885998B2 (en) 2010-12-09 2014-11-11 Adc Telecommunications, Inc. Splice enclosure arrangement for fiber optic cables

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101091205B1 (ko) * 2010-03-30 2011-12-09 이화여자대학교 산학협력단 암전류가 감소된 실리콘 광전자 증배관
WO2011122856A3 (ko) * 2010-03-30 2011-12-29 이화여자대학교 산학협력단 실리콘 광증배 소자
CN105097964A (zh) * 2015-07-21 2015-11-25 中国电子科技集团公司第三十八研究所 一种有源区高斯掺杂型pπn紫外探测器
JP2023543735A (ja) * 2020-09-22 2023-10-18 コンセホ スペリオール デ インベスティガシオネス シエンティフィカス（セエセイセ） 低侵入性粒子低利得アバランシェ検出器

Also Published As

Publication number Publication date
JPS6259906B2 (enrdf_load_stackoverflow) 1987-12-14

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