WO2011122856A3 - 실리콘 광증배 소자 - Google Patents

실리콘 광증배 소자 Download PDF

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Publication number
WO2011122856A3
WO2011122856A3 PCT/KR2011/002192 KR2011002192W WO2011122856A3 WO 2011122856 A3 WO2011122856 A3 WO 2011122856A3 KR 2011002192 W KR2011002192 W KR 2011002192W WO 2011122856 A3 WO2011122856 A3 WO 2011122856A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon photomultiplier
epitaxial layers
micro pixels
layers
trench electrodes
Prior art date
Application number
PCT/KR2011/002192
Other languages
English (en)
French (fr)
Other versions
WO2011122856A2 (ko
Inventor
박일흥
이직
남지우
이혜영
Original Assignee
이화여자대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020100028869A external-priority patent/KR101108716B1/ko
Priority claimed from KR1020100028868A external-priority patent/KR101091205B1/ko
Application filed by 이화여자대학교 산학협력단 filed Critical 이화여자대학교 산학협력단
Publication of WO2011122856A2 publication Critical patent/WO2011122856A2/ko
Publication of WO2011122856A3 publication Critical patent/WO2011122856A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

p 전도성 타입의 에피택시층 및 상기 에피택시층 내부에 형성된 PN-접합층을 포함하는 다수의 마이크로 픽셀; 상기 마이크로 픽셀 주위에 배치되는 트렌치 전극; 및 상기 마이크로 픽셀 및 상기 트렌치 전극이 안착되는 동시에 외부의 광선이 입사 가능하도록 개방된 상태의 기판을 포함하는 실리콘 광증배 소자가 제공된다. 상기 PN-접합층의 종단면의 중심축은 상기 에피택시층에 수직이 되도록 형성된다.
PCT/KR2011/002192 2010-03-30 2011-03-30 실리콘 광증배 소자 WO2011122856A2 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2010-0028868 2010-03-30
KR1020100028869A KR101108716B1 (ko) 2010-03-30 2010-03-30 전 파장 대에서 양자효율이 향상된 수직구조 실리콘 광증배 소자
KR1020100028868A KR101091205B1 (ko) 2010-03-30 2010-03-30 암전류가 감소된 실리콘 광전자 증배관
KR10-2010-0028869 2010-03-30

Publications (2)

Publication Number Publication Date
WO2011122856A2 WO2011122856A2 (ko) 2011-10-06
WO2011122856A3 true WO2011122856A3 (ko) 2011-12-29

Family

ID=44712761

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/002192 WO2011122856A2 (ko) 2010-03-30 2011-03-30 실리콘 광증배 소자

Country Status (1)

Country Link
WO (1) WO2011122856A2 (ko)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170078A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 半導体受光装置
KR910003845A (ko) * 1989-07-06 1991-02-28 정상구 수평형 수광소자 및 그 제조방법
KR20070051782A (ko) * 2004-05-05 2007-05-18 막스-플랑크-게젤샤프트 츄어 푀르더룽 데어 비쎈샤프텐 에.파우. 실리콘 광전자 증배관 및 상기 실리콘 광전자 증배관을위한 셀

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170078A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 半導体受光装置
KR910003845A (ko) * 1989-07-06 1991-02-28 정상구 수평형 수광소자 및 그 제조방법
KR20070051782A (ko) * 2004-05-05 2007-05-18 막스-플랑크-게젤샤프트 츄어 푀르더룽 데어 비쎈샤프텐 에.파우. 실리콘 광전자 증배관 및 상기 실리콘 광전자 증배관을위한 셀

Also Published As

Publication number Publication date
WO2011122856A2 (ko) 2011-10-06

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