JPS58168273A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS58168273A
JPS58168273A JP57050092A JP5009282A JPS58168273A JP S58168273 A JPS58168273 A JP S58168273A JP 57050092 A JP57050092 A JP 57050092A JP 5009282 A JP5009282 A JP 5009282A JP S58168273 A JPS58168273 A JP S58168273A
Authority
JP
Japan
Prior art keywords
type
layer
region
conductivity type
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57050092A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6216028B2 (enrdf_load_html_response
Inventor
Yoshinori Okajima
義憲 岡島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57050092A priority Critical patent/JPS58168273A/ja
Priority to EP83301824A priority patent/EP0090665B1/en
Priority to DE8383301824T priority patent/DE3380004D1/de
Publication of JPS58168273A publication Critical patent/JPS58168273A/ja
Priority to US06/881,475 priority patent/US4677455A/en
Publication of JPS6216028B2 publication Critical patent/JPS6216028B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP57050092A 1982-03-20 1982-03-30 半導体記憶装置 Granted JPS58168273A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57050092A JPS58168273A (ja) 1982-03-30 1982-03-30 半導体記憶装置
EP83301824A EP0090665B1 (en) 1982-03-30 1983-03-30 Semiconductor memory device
DE8383301824T DE3380004D1 (en) 1982-03-30 1983-03-30 Semiconductor memory device
US06/881,475 US4677455A (en) 1982-03-20 1986-07-01 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57050092A JPS58168273A (ja) 1982-03-30 1982-03-30 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS58168273A true JPS58168273A (ja) 1983-10-04
JPS6216028B2 JPS6216028B2 (enrdf_load_html_response) 1987-04-10

Family

ID=12849402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57050092A Granted JPS58168273A (ja) 1982-03-20 1982-03-30 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS58168273A (enrdf_load_html_response)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5497023A (en) * 1985-09-25 1996-03-05 Hitachi, Ltd. Semiconductor memory device having separately biased wells for isolation
US6740958B2 (en) 1985-09-25 2004-05-25 Renesas Technology Corp. Semiconductor memory device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5497023A (en) * 1985-09-25 1996-03-05 Hitachi, Ltd. Semiconductor memory device having separately biased wells for isolation
US6208010B1 (en) 1985-09-25 2001-03-27 Hitachi, Ltd. Semiconductor memory device
US6740958B2 (en) 1985-09-25 2004-05-25 Renesas Technology Corp. Semiconductor memory device
US6864559B2 (en) 1985-09-25 2005-03-08 Renesas Technology Corp. Semiconductor memory device

Also Published As

Publication number Publication date
JPS6216028B2 (enrdf_load_html_response) 1987-04-10

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