JPS58168216A - シリコン膜の製造方法 - Google Patents
シリコン膜の製造方法Info
- Publication number
- JPS58168216A JPS58168216A JP57051969A JP5196982A JPS58168216A JP S58168216 A JPS58168216 A JP S58168216A JP 57051969 A JP57051969 A JP 57051969A JP 5196982 A JP5196982 A JP 5196982A JP S58168216 A JPS58168216 A JP S58168216A
- Authority
- JP
- Japan
- Prior art keywords
- discharge
- discharge power
- silicon film
- film
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 18
- 239000010703 silicon Substances 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910000077 silane Inorganic materials 0.000 claims abstract description 13
- 239000002994 raw material Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000010408 film Substances 0.000 abstract description 31
- 239000007789 gas Substances 0.000 abstract description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 6
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 3
- 238000007599 discharging Methods 0.000 abstract description 3
- 239000001257 hydrogen Substances 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 abstract description 2
- 239000005297 pyrex Substances 0.000 abstract description 2
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 7
- 230000005669 field effect Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- -1 12 is an 8nO Substances 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57051969A JPS58168216A (ja) | 1982-03-30 | 1982-03-30 | シリコン膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57051969A JPS58168216A (ja) | 1982-03-30 | 1982-03-30 | シリコン膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58168216A true JPS58168216A (ja) | 1983-10-04 |
| JPH0429216B2 JPH0429216B2 (enExample) | 1992-05-18 |
Family
ID=12901693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57051969A Granted JPS58168216A (ja) | 1982-03-30 | 1982-03-30 | シリコン膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58168216A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59126680A (ja) * | 1983-01-11 | 1984-07-21 | Mitsui Toatsu Chem Inc | 非晶質シリコン太陽電池およびその製法 |
| JPS6150378A (ja) * | 1984-08-20 | 1986-03-12 | Mitsui Toatsu Chem Inc | 非晶質太陽電池の製法 |
| JP2012134541A (ja) * | 2009-02-17 | 2012-07-12 | Korea Inst Of Industrial Technology | 誘導結合プラズマ化学気相蒸着法を利用した太陽電池の製造方法 |
-
1982
- 1982-03-30 JP JP57051969A patent/JPS58168216A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| APPL.PHYS.LETT.37-8=1980 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59126680A (ja) * | 1983-01-11 | 1984-07-21 | Mitsui Toatsu Chem Inc | 非晶質シリコン太陽電池およびその製法 |
| JPS6150378A (ja) * | 1984-08-20 | 1986-03-12 | Mitsui Toatsu Chem Inc | 非晶質太陽電池の製法 |
| JP2012134541A (ja) * | 2009-02-17 | 2012-07-12 | Korea Inst Of Industrial Technology | 誘導結合プラズマ化学気相蒸着法を利用した太陽電池の製造方法 |
| JP2012146994A (ja) * | 2009-02-17 | 2012-08-02 | Korea Inst Of Industrial Technology | 誘導結合プラズマ化学気相蒸着法を利用した太陽電池の製造方法 |
| JP2014195101A (ja) * | 2009-02-17 | 2014-10-09 | Korea Inst Of Industrial Technology | 誘導結合プラズマ化学気相蒸着法を利用した太陽電池の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0429216B2 (enExample) | 1992-05-18 |
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