JPH0429216B2 - - Google Patents

Info

Publication number
JPH0429216B2
JPH0429216B2 JP57051969A JP5196982A JPH0429216B2 JP H0429216 B2 JPH0429216 B2 JP H0429216B2 JP 57051969 A JP57051969 A JP 57051969A JP 5196982 A JP5196982 A JP 5196982A JP H0429216 B2 JPH0429216 B2 JP H0429216B2
Authority
JP
Japan
Prior art keywords
discharge power
film
discharge
flow rate
silicon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57051969A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58168216A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57051969A priority Critical patent/JPS58168216A/ja
Publication of JPS58168216A publication Critical patent/JPS58168216A/ja
Publication of JPH0429216B2 publication Critical patent/JPH0429216B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Photovoltaic Devices (AREA)
JP57051969A 1982-03-30 1982-03-30 シリコン膜の製造方法 Granted JPS58168216A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57051969A JPS58168216A (ja) 1982-03-30 1982-03-30 シリコン膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57051969A JPS58168216A (ja) 1982-03-30 1982-03-30 シリコン膜の製造方法

Publications (2)

Publication Number Publication Date
JPS58168216A JPS58168216A (ja) 1983-10-04
JPH0429216B2 true JPH0429216B2 (enExample) 1992-05-18

Family

ID=12901693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57051969A Granted JPS58168216A (ja) 1982-03-30 1982-03-30 シリコン膜の製造方法

Country Status (1)

Country Link
JP (1) JPS58168216A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59126680A (ja) * 1983-01-11 1984-07-21 Mitsui Toatsu Chem Inc 非晶質シリコン太陽電池およびその製法
JPS6150378A (ja) * 1984-08-20 1986-03-12 Mitsui Toatsu Chem Inc 非晶質太陽電池の製法
KR101207582B1 (ko) * 2009-02-17 2012-12-05 한국생산기술연구원 유도결합플라즈마 화학기상증착법을 이용한 태양전지 제조 방법

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPL.PHYS.LETT.37-8=1980 *

Also Published As

Publication number Publication date
JPS58168216A (ja) 1983-10-04

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