JPS58166728A - Assembling device for semiconductor - Google Patents
Assembling device for semiconductorInfo
- Publication number
- JPS58166728A JPS58166728A JP57049775A JP4977582A JPS58166728A JP S58166728 A JPS58166728 A JP S58166728A JP 57049775 A JP57049775 A JP 57049775A JP 4977582 A JP4977582 A JP 4977582A JP S58166728 A JPS58166728 A JP S58166728A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- lead frame
- bonding
- pellet
- molded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7865—Means for transporting the components to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は１ｍ脂封止半導体装置の組立を行なうための
半導体組立装置５二関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor assembly apparatus 52 for assembling a 1 m fat-sealed semiconductor device.
一般に、樹脂封止半導体装置の組立では、複数のリード
を一体Ｃ：形成したリードフレーム上に半導体素子（以
下ペレットと称する）ｔボンディングし、ペレットの電
極とリード間をワイヤボンディングし、さらにペレット
とリードの一部を封止する樹脂モールド加工を行なう一
連の組立工程を必要とする。Generally, in assembling a resin-sealed semiconductor device, a plurality of leads are bonded to a semiconductor element (hereinafter referred to as a pellet) on the formed lead frame, wire bonding is performed between the electrodes of the pellet and the leads, and then the pellet is bonded to the lead frame. A series of assembly steps is required, including resin molding to partially seal the leads.
このような組立工程は、具体的Ｃ二は第１−（ブロック
工程１／ ） ｔ−示すような工程からなる・すなわち
、まずペレットを１個づつリードフレームの所定の位置
感−取り付ける（第１−に））・この場合、ペレットと
リードフレームとのポンティングは通常銀ペースト等を
介して行なう・また、リードフレームは、液切リールに
巻かれた連続なものを一足の長尺に切断され、フレーム
移送装置で一連の組立装置間を間欠的−二移送される。This kind of assembly process consists of steps as shown in the first block (Block process 1/).In other words, the pellets are first attached one by one to a predetermined position on the lead frame. -)) In this case, the pellet and lead frame are usually connected via silver paste, etc. In addition, the lead frame is a continuous piece wound on a liquid cutter reel and then cut into one long length. The frames are transferred intermittently between a series of assembly devices by a frame transfer device.
そして、フレーム上のペレットの電極と対応するリード
間でワイヤボンディングを行なう（同図（、Ｅ４ ）
、このボンディング終了後、上記のような長尺のリード
フレームを１例えば１個ごと上下６二動作するマガジン
５：収納する（同図υ）ｏリードフレームがマガジンＣ
二満杯１−なると、マガジンを樹脂モールド工程のロー
ダ側へ移動し、ローディング装置によってマガジンから
リードフレーム？：１個づつ引き出してモールド工程へ
送出する（同図０）Ｏモールド工程では１通常まずリー
ドフレームを樹脂モールドに適合する温度まで加熱する
Ｏそして、このフレームをペレットを含んでモールド金
型の上下型内Ｃニセットし、樹脂を圧力導入し樹脂モー
ルド金型が行なわれる（同図（ト）））・樹脂モールド
された長尺のリードフレームは、一定の短尺のリードフ
レーム≦二切断され、それぞれがマガジン等Ｉ：収納さ
れるか、あ番いは１個々の半導体装置がリードフレーム
から分離されて取り出されるイ同図（ト））。Then, wire bonding is performed between the electrodes of the pellet on the frame and the corresponding leads (same figure (, E4).
, After this bonding is completed, the long lead frame as described above is stored in the magazine 5, which moves up and down 62 times one by one (see figure υ) o The lead frame is placed in the magazine C.
When the magazine is full, the magazine is moved to the loader side of the resin molding process, and the loading device transfers the magazine to the lead frame. :The lead frame is pulled out one by one and sent to the molding process (0 in the same figure).In the molding process, the lead frame is usually heated to a temperature compatible with the resin mold.OThen, this frame, including the pellets, is placed above and below the mold. C is set in the mold, pressure is introduced into the mold, and resin molding is performed (see figure (g))).The resin-molded long lead frame is cut into a certain short lead frame ≦2, and each The semiconductor device is stored in a magazine, etc., or the individual semiconductor devices are separated from the lead frame and taken out (FIG. 1).
ところで、上記のような組立工程の中で、ワイヤボンデ
ィング工程（第１図の＠）求１通常０．２秒／ワイヤ程
度の速度でボンディング処理が行なわれ、ペレット１個
当りであれば平均数秒程度であるＯしたがって、ワイヤ
ボンディング工程では、はとんど連続的Ｃニボンデイン
グされたリードフレームが次の工程へ送り出されるＯこ
れに対して、樹脂モールド工程（Ｉｌｌｌ／（１）では
、ボンディングされたリードフレームがマガジン（ユ収
納された後、このマガジンから数枚乃至数十枚のリード
フレームを動産≦；引き出してモールド金型にセットす
る・そして、樹脂の硬化時間として数十秒乃至数分の処
理時間を必要とする６’Ｔなわち、ワイヤボンディング
工程では連続的に処理されるのに対して、モールド工程
ではバッチ処理されることになるＯそのため、上記のよ
う鑑；ボンディングを終了したリードフレームをマガジ
ンに収納する工程（第１図（（、”ｌ ）およびモール
ド工程のローグ一部へリードフレームなセットする工程
（８１１５ｍ（ロ））が必要となる・したがって、従来
の組立工程ではこれらの工程の処理時間（数秒乃至数分
）が。By the way, in the above-mentioned assembly process, the wire bonding process (@ in Figure 1) is usually performed at a speed of about 0.2 seconds/wire, and for one pellet, it takes an average of several seconds. Therefore, in the wire bonding process, the bonded lead frame is sent to the next process in most cases. In contrast, in the resin molding process (1), the bonded lead frame is sent to the next process. After the lead frames are stored in a magazine, several to several dozen lead frames are pulled out from the magazine and set in a mold.Then, the resin hardens for several tens of seconds to several minutes. In other words, the wire bonding process is processed continuously, whereas the molding process is batch processed. Therefore, as shown above; The process of storing the lead frame in the magazine (Fig. 1 ((,"l) and the process of setting the lead frame in the log part of the molding process (8115m (b)) is required. Therefore, in the conventional assembly process, The processing time for these steps (several seconds to several minutes).
組立工程全体の効率を低下させることになり。This will reduce the efficiency of the entire assembly process.
またこれらの工程の設備のためのコストも要す型内の温
度分布区−モールド処理毎にばらつきが生ずるため、樹
脂の硬化特性が変動し完成した半導体装置の製品の耐湿
性または熱衝撃性等がばらつく欠点もあった。In addition, the cost of equipment for these processes is high.Due to variations in the temperature distribution area within the mold depending on the molding process, the curing characteristics of the resin vary and the moisture resistance or thermal shock resistance of the finished semiconductor device product is affected. There was also the drawback of inconsistent results.
この発明は上記の事情を鑑みてなされたもので、樹脂封
止半導体装置の組立工程Ｃおいて。This invention has been made in view of the above circumstances, and is directed to the assembly process C of a resin-sealed semiconductor device.
ワイヤボンディング工程と樹脂モールド工程闇の処理効
率を高め１組立工程の設備コストを低下させ、しかも確
実Ｃ：樹脂モールド加工を行なうことができるようにし
た半導体組立装置を提供することを目的とする０
〔発明の概要〕
すなわち、この発明においては、ワイヤボンディング工
程で必要なボンディング装置および樹脂モールド加工を
行なう樹脂モールド装［ｔ’に連結し、それぞれ≦二必
要な加熱装ｋを一体化したヒートブロックを設けるもの
である・〔発明の実施例〕
以下図面を参照してこの発明の一実施例（二ついて説明
下る。第２因は、この発明に係る半導体組立装置（但し
必要な部分のみを示す）の構成を示すもので、ｌは一足
の長さのリードフレームで一連の組立工程に間欠的Ｃ二
移送されている・このリードフレームｌの所定の位置鑑
；１例えば銀ペーストでペレツ）ｊが取り付けられる・
このリードフレームｌ上のペレット２に対して。The purpose of the present invention is to provide a semiconductor assembly device that increases the processing efficiency of the wire bonding process and the resin molding process, reduces the equipment cost for one assembly process, and is capable of reliable C: resin molding. [Summary of the Invention] That is, the present invention provides a heat block which is connected to a bonding device necessary in the wire bonding process and a resin molding device [t' for performing the resin molding process, and which integrates ≦2 heating devices k, respectively. [Embodiment of the Invention] An embodiment of the invention (two embodiments will be explained below) with reference to the drawings. ), where l is a one-foot-long lead frame that is intermittently transferred to a series of assembly processes. The predetermined position of this lead frame l is pelletized with silver paste, for example). can be attached
For pellet 2 on this lead frame l.
その電極と対応するリード（ペレット２の電極数に対応
してリードフレームｌに形成されている）間を金細線等
のワイヤ３でボンディングする工程がボンディング装Ｗ
ＩＩＬ４でなされる・このワイヤボンディングでは１通
常加熱処理を必要とするため、ボンディング装置ｉｉ４
にはボンディング用の加熱装置であるヒートブロック５
が設けられている。このボンディング装置４で、ワイヤ
ボンディングされたリードフレームｌは。The process of bonding between the electrodes and the corresponding leads (formed on the lead frame l in accordance with the number of electrodes on the pellet 2) using a wire 3 such as a thin gold wire is the bonding process W.
This wire bonding is done in IIL4. Since this wire bonding normally requires heat treatment, bonding equipment II4 is used.
There is a heat block 5 which is a heating device for bonding.
is provided. The lead frame l wire-bonded with this bonding device 4 is as follows.
直ちに樹脂モールド装置６Ｃ：移送される。この栢脂モ
ールド装！ｉ６は１通常金型である上型２ｍおよび下型
２ｂを有している・この上下型ｙａ、ｙｂの中で１例え
ば上型７ａには樹脂投入口８か設けられ、また下型１ｂ
はモールド用の加熱装置であるヒートブロック９と一体
化されている０このヒートブロック９と上記ボンディン
グ用のヒートブロック５は一個のヒートブロックｌＯと
して一体化されている。Immediately transferred to the resin molding device 6C. This resin molding! i6 has an upper mold 2m and a lower mold 2b which are normal molds. Among these upper and lower molds ya and yb, 1, for example, the upper mold 7a is provided with a resin inlet 8, and the lower mold 1b
This heat block 9 and the bonding heat block 5 are integrated as one heat block 10.
このように構成される組立装置シーおいて、リードフレ
ームｌ上のベレット２≦二対して、上記のようにボンデ
ィング装置４でワイヤボンディングが行なわれると、リ
ードフレームｌはベレット２と共Ｃ；直ち（−切崩モー
ルド装置６に移送される・このモールド装置６の上下型
７ ｍ 、 ７ｂにベレット２を含むリードフレームの
一部かセットされる０そして、上型７ｍｌ二樹脂投入口
８から樹脂が供給され、下型２ｂ≦；はヒートブロック
９から加熱されて樹脂モールド加工が行なわれる０この
モールド工程で樹脂封止された半導体装置ＩＩは、さら
６；例えはフレームの切断工程区；移送されるＯ
ところで、上記のようなワイヤボンディングは１通常０
．２秒／ワイヤ程度の時間を要するため、例えばベレッ
ト２がｊ４〜１６ビンのＤＩＰタイプであれば、その処
理時間は３〜４秒程度である・したがって、リードフレ
ームはその時間ピッチで送り出される・さら１：、モー
ルド工程では数個のベレットｚが一度にモールド装置６
でモールド加工される◎この処理時間は、数秒乃至数十
秒（１回のモールド処理）である・これは、従来のよう
なバッチ処理方式で行なわれるモールド工程では、リー
ドフレームをモールド金型から収り出す場合、数枚乃至
数十枚のモールドされたフレームをささえてやるだけの
機械的強度になるまで熱硬化性樹脂の硬化時間を長くす
る必要があり１通常前記のように数十秒乃至数分の硬化
時間Ｖ要した・これに対して。In the assembly apparatus C configured as described above, when wire bonding is performed by the bonding device 4 as described above for the pellets 2≦2 on the lead frame l, the lead frame l and the pellets 2 C; A part of the lead frame including the pellet 2 is set in the upper and lower molds 7m and 7b of this molding device 6. Then, 7ml of the upper mold 2 is transferred to the resin inlet 8. A resin is supplied, and the lower mold 2b≦ is heated by a heat block 9 to perform resin molding.The semiconductor device II sealed with resin in this molding process is further processed into a frame cutting process section; By the way, wire bonding as described above is 1 usually 0
．． Since it takes about 2 seconds/wire, for example, if the pellet 2 is a DIP type with j4 to 16 bins, the processing time is about 3 to 4 seconds. Therefore, the lead frame is sent out at that time pitch. Further 1: In the molding process, several pellets z are placed in the molding device 6 at once.
◎This processing time ranges from several seconds to several tens of seconds (one molding process).This is because in the conventional batch molding process, the lead frame is removed from the mold. When removing the molded frames, it is necessary to increase the curing time of the thermosetting resin until it has enough mechanical strength to support several to dozens of molded frames. On the other hand, it took a curing time of V to several minutes.
この発明では、ボンディングされたリードフレームを直
ちにモールド装ｗＩＬ６＆ニセットしモールド処理がな
されるため、多数枚のリードフレームをささえる５２足
る強度まで樹脂な硬化させる必要がなく、その処理時間
は数秒乃至数十秒で十分となる。したがって、はぼ連続
的≦ユボンデイングおよびモールド処理を行なうことが
できる。さらに、上記のようにボンディング装ＷＬ４お
よびモールド装置６の両者のヒートフロック５、＃は、
−個のヒートブロック１０として一体化されている、そ
のため、ボンディング装置４でワイヤボンディング処理
のため舊ユ加熱されたリードフレームｌを１例えば室温
まで冷却することなく直ち直二モールド装に６へ移送さ
れ。In this invention, the bonded lead frame is immediately molded and molded, so there is no need to harden the resin to a strength sufficient to support a large number of lead frames, and the processing time ranges from several seconds to several tens of seconds. Seconds will be enough. Therefore, almost continuous bonding and molding can be performed. Furthermore, as described above, the heat flocks 5, # of both the bonding device WL4 and the molding device 6 are
- Therefore, the lead frame 1, which is heated in the bonding device 4 for the wire bonding process, is immediately transferred to the mold assembly 6 without being cooled down to, for example, room temperature. transferred.
温度変化のロスがなくモールド−：必要な温度でリード
フレーム７１−加熱できる・したかって。Mold without loss due to temperature change: Lead frame 71 can be heated at the required temperature.
従来のようにボンディング工程後のリードフレームが室
温まで低下することがないため、モールド工程における
加熱時間を大幅−二減少し、加熱エネルギーも節約でき
る・さらｇユ、モールド族ＷＬ６の金型（上下型ｙａ、
ｙｂ）内の温度分布のばらつきが少なくなるＯこれは、
一体化されたヒートブロック１ｔＢユよる金型への加熱
およびパッチ処理ではない連続的処理工程の理出ｇ二よ
る◎したがって、モールドされる樹脂の硬化特性の変動
を少なくでき、製造された樹脂封止半導体装置の耐湿性
または熱衛撃性等のばらつきも大幅に減少できる。Since the lead frame does not cool down to room temperature after the bonding process as in the past, the heating time in the molding process can be significantly reduced by -2, and heating energy can also be saved. Type ya,
This reduces the variation in temperature distribution within yb).
Due to the heating of the mold using an integrated heat block of 1 tB and the continuous processing process that is not a patch process, it is possible to reduce fluctuations in the curing characteristics of the molded resin, and improve the quality of the manufactured resin seal. Variations in moisture resistance, heat sanitizing properties, etc. of semiconductor devices can also be significantly reduced.
以上詳述したようｇ：この発明Ｃ二よれば、樹脂封止半
導体装置の組立工程１：おいて、ワイヤボンティング工
程と樹脂モールド工程間を連結できるようＣ二して１組
立工程の処理効率を大幅（；高めることができ、しかも
マガジンおよびローディング装置等の設備を省略できる
ため設備コストを低下させることができる・さらに、樹
脂モールド加工≦二必要な金型内の温度分布のばらつき
を減少できるため、安定で確実な樹脂モールド加工を行
□なうことができる効果もある。As described in detail above, according to the present invention C2, in the assembly process 1 of a resin-sealed semiconductor device, the wire bonding process and the resin molding process can be connected. It is possible to significantly increase Therefore, there is also the effect that stable and reliable resin mold processing can be performed.
第１−は従来の樹脂封止半導体装置の組立工程を示すブ
ロック図、第２因はこの発明の一実施例Ｃ係る半導体組
立装置の概略構成内である。
ｌ・・・リードフレーム、２・・・ベレット、Ｊ−・・
ボンデイングワイヤ、４・・・ポンディング？ｊ 置、
５ 。
９・・・ヒートブロック、６・・・樹脂モールド装置。
出願人代理人 弁理士 鈴江武 彦The first factor is a block diagram showing the assembly process of a conventional resin-sealed semiconductor device, and the second factor is a schematic configuration of a semiconductor assembly device according to an embodiment C of the present invention. l...Lead frame, 2...Bellet, J-...
Bonding wire, 4...ponding? j place,
5. 9...Heat block, 6...Resin molding device. Applicant's representative Patent attorney Takehiko Suzue
Claims (1)
ーム上の半導体素子およびリード間をボンディングワイ
ヤで接続するボンディング装置と、このボンディング装
置と連結して上記ワイヤボンディングされた半導体素子
に対して樹脂モールド加工を行なう樹脂モールド装置と
。 この樹脂モールド装置および上記ボンディング装置のそ
れぞれに必要な加熱装置を一体化したヒートブロックと
を具備したことを特徴とする半導体組立装置。[Claims] Assembly apparatus C for a resin-sealed semiconductor device: a bonding device for connecting a semiconductor element on a lead frame and a lead with a bonding wire; A resin molding machine that performs resin molding on semiconductor elements. A semiconductor assembly device comprising a heat block that integrates heating devices necessary for each of the resin molding device and the bonding device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57049775A JPS58166728A (en) | 1982-03-27 | 1982-03-27 | Assembling device for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57049775A JPS58166728A (en) | 1982-03-27 | 1982-03-27 | Assembling device for semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58166728A true JPS58166728A (en) | 1983-10-01 |
Family
ID=12840539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57049775A Pending JPS58166728A (en) | 1982-03-27 | 1982-03-27 | Assembling device for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58166728A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4881885A (en) * | 1988-04-15 | 1989-11-21 | International Business Machines Corporation | Dam for lead encapsulation |
-
1982
- 1982-03-27 JP JP57049775A patent/JPS58166728A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4881885A (en) * | 1988-04-15 | 1989-11-21 | International Business Machines Corporation | Dam for lead encapsulation |
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