JP2570583B2 - Method and apparatus for manufacturing resin-encapsulated semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a resin-sealed semiconductor device and an apparatus for manufacturing the same.

[0002]

2. Description of the Related Art In a resin-encapsulated semiconductor device, a semiconductor element is mounted on an element mounting portion of a lead frame, and the element and the tip of a lead are connected by a thin metal wire. Then, a semiconductor element, a thin metal wire, an internal lead and the like mounted on the element mounting portion are sealed with a resin by injecting a sealing resin into the mold.

In the prior art, after sealing aging for stabilizing the sealing resin, the tie bar is cut and removed, the resin is deburred, the external leads are subjected to an exterior treatment such as solder plating, and separated from the lead frame. Then, external leads are formed into a predetermined shape to complete individual semiconductor devices.

FIG. 10 is a view for explaining the prior art.
In the figure, (A) shows an SOP (Small Outli).
FIG. 1B is a perspective view showing a molding die for molding external leads of a semiconductor device called “ne Package” and a semiconductor device before molding, and FIG. 2B is a side sectional view showing a state of the molding. (C) is a front view showing the semiconductor device after lead molding, and (D) is a side view thereof.

In FIGS. 10 (A) and 10 (B), the root of the external lead 1 protruding from the encapsulating resin portion 2 is vertically moved by the lead pressing surface 6 of the upper die 5 and the lead pressing surface 4 of the lower die 3. With the pinch fixed, the punch 7 is lowered from above to push down the external lead 1, and the tip 11 of the external lead 1 is pinched between the lower surface 9 of the punch 7 and the lead tip holding surface 8 of the lower mold 3. , External lead 1 is a gull wing (GUL
L WING). As shown in the drawing, the gull-wing shape is such that the external lead led out from the side surface of the encapsulating resin portion 2 is bent, and is bent again in a direction parallel to the main surface at a position protruding from the main surface of the encapsulating resin portion, so that the tip 11 The tip 11 is adhered to a conductor layer pad (not shown) of the printed circuit board 12.

[0006]

However, some resin-encapsulated semiconductor devices have a large warp in the encapsulation resin portion 2 as shown in FIG. 10 (A). Possible causes of the warpage include a difference in contraction between the lead frame and the sealing resin, a difference in contraction between the upper resin and the lower resin, and the like.

When the external leads 1 are formed on the semiconductor device in which the sealing resin portion 2 is warped, as shown in FIG.
In step 0 (B), the lead pressing surface 6 of the upper die 5 and the lead pressing surface 4 of the lower die 3 are flat surfaces, respectively.
During the external lead forming operation, the warpage of the encapsulating resin portion 2 is temporarily corrected, and the tip 11 of each external lead is formed at an equal distance from the encapsulating resin portion 2. However, since the warp of the encapsulating resin portion 2 returns to its original state when it is taken out from the lead molding die, the tip 11 of the external lead 1 formed in a gull wing shape is displaced as the warp returns. as a result,
As shown in FIGS. 10C and 10D, the tip 11 of the external lead 1 is not located on the same plane, and when the semiconductor device is mounted on the printed board 12, it is formed on the upper surface of the printed board 12. This causes a problem that a defective connection between the conductive layer pad and the tip 11 of the external lead 1 occurs. For example, when the lead pitch is 0.5 mm, the height difference between the tips of the external leads must be within 55 μm. In the case of FIG. And the height difference between the tip 11 of the center external lead 1 and the tip 11 of the center external lead 1 becomes larger than 55 μm, and a connection failure occurs between the tip 11 of the center external lead 1 and the conductive layer pad thereunder.

On the other hand, in order to solve the above problem, a technique as shown in FIG. 11 is disclosed in Japanese Patent Application Laid-Open No. 2-210855. In the same figure, (A) is a side sectional view showing a molding die for molding the external leads and a part of the external leads being molded, (B) is a front view showing the semiconductor device after the leads are molded, C) is a side view thereof.

In FIG. 11A corresponding to FIG. 10B of the lead forming operation, the lead pressing surface 26 of the upper die 25 and the lead pressing surface 24 of the lower die 23 sandwiching the root of the external lead 1 are respectively formed. , Are formed on the steps corresponding to the warpage of the sealing resin portion. By doing so, FIGS. 11B and 11C
As shown in the figure, the outer leads 1 at the central portion are formed to extend in the vertical direction longer than the outer leads 1 at both ends by an amount corresponding to the warpage of the sealing resin portion.
Can be located on the same flat surface, and the problem of poor connection does not occur.

However, since the size and the direction of the warp of the sealing resin portion are different for each semiconductor device, the above-mentioned prior art which determines the shape of the lead holding surface of the mold in accordance with the warping of the sealing resin portion is practically used. It is impossible to serve.

It is therefore an object of the present invention to provide a practical method for manufacturing a resin-encapsulated semiconductor device which eliminates connection failures when mounting the semiconductor device on a printed circuit board, and an apparatus for manufacturing the same.

[0012]

A feature of the present invention is that a semiconductor element is mounted on a predetermined portion of a lead frame, and a connection region of a plurality of leads of the lead frame and a plurality of connection portions of the semiconductor element are formed by thin metal wires. A step of connecting the semiconductor element, the thin metal wire, and the connection area of the lead and the vicinity thereof with a sealing resin part, a step of correcting warpage of both main surfaces of the sealing resin part, and a step of A step of cutting a plurality of leads to be led out at predetermined positions to separate an intermediate product derived from leads (external leads) of a predetermined length from the corrected side surface of the sealing resin portion from a lead frame;
Possess a step of molding the lead intermediate products, separated from the lead frame, correcting the warp of the sealing resin portion
In the process, both main surfaces of the sealing resin portion are sandwiched between flat surfaces of a pair of members.
A first step of pressing the main surface under heating, and
After that, both main surfaces of the sealing resin portion are sandwiched between the flat surfaces of
A second step in which the main surface is pressed while
Transport the lead frame between step and the second step
And a transfer step . Heating in the first step is performed by a heater block, and cooling in the second step can be performed by a heat sink. Further, one member in the first step is a transfer plate for mounting and transferring a lead frame, and the other member is the heater block, and the upper surface of the transfer plate and the lower surface of the heater block are respectively flat surfaces, One member in the second step may be the same transport plate as in the first step, the other member may be a heat sink, and the lower surface of the heat sink may be a flat surface. Further, the lead frame is intermittently fed between the plurality of pressurizing and heating stages, and the first step is sequentially performed by these pressurizing and heating stages. Can be sequentially performed on these pressurized cooling stages.

Another feature of the present invention is that a pair of upper and lower flat surface means sandwiching both main surfaces of a sealing resin part formed on a lead frame by molding a semiconductor element from above and below, and sealing via a flat surface means. and pressurizing means for applying pressure to the main surface of the sealing resin portion, pressurizing
Heating means, and the heating means heats the sealing resin portion to a high temperature.
In the manufacturing apparatus for a resin-sealed semiconductor device, the main surface of the sealing resin portion is corrected by pressing the main surface of the sealing resin portion by the pressing means in the state described above. The heating means has upper and lower heater blocks located above and below the upper and lower flat surface means, respectively, and the pressing means has a weight placed on the upper heater block. The weight of the weight can act on the upper main surface of the sealing resin portion through the upper heater block and the upper flat surface means. Further, the upper flat surface means is a flat lower surface in contact with the sealing resin portion of the upper heater block,
The lower flat surface means may be a flat upper surface in contact with the sealing resin portion of the transport plate on which the lead frame is mounted and transferred.
Here, the upper heater block may be configured such that a main body having a heating unit and a lower part forming a flat lower surface are separated. Alternatively, the upper heater block may be formed such that a main body having a heat generating means and a lower portion forming a flat lower surface are integrally formed. The height difference in the plane of each flat surface in the flat surface means is 15 μm.
m is preferable.

Another feature of the present invention is that a pair of heater blocks sandwiching both main surfaces of a sealing resin portion formed on a lead frame by molding a semiconductor element from above and below, and the sealing resin portion via a heater block. The first to apply pressure to the main surface
A first straightening portion having a pressing means, a pair of heat sinks sandwiching both main surfaces of a sealing resin portion formed on a lead frame by molding a semiconductor element from above and below, and a sealing resin portion via a heat sink. And a second straightening unit having a second pressurizing means for applying pressure to the main surface of the sealing resin unit. After the pressure is applied by the pressure means, the lead frame is transferred to the second straightening section, and the sealing resin section, which has become hot in the first straightening section, is cooled by the heat sink in the second straightening section while its main surface is being cooled. In a resin-encapsulated semiconductor device manufacturing apparatus in which the pressure is pressed by a second pressing means. Here, the first
Is provided with a plurality of pressurizing and heating stages, each of the plurality of pressurizing and heating stages is provided with a pair of heater blocks and first pressurizing means, and the second correcting unit is provided with a plurality of pressurizing and heating stages. A pressure cooling stage is provided, and each of the plurality of pressure cooling stages is provided with a pair of heat sinks and second pressing means, and the lead frame is intermittently fed between the pressure heating stages in the first straightening unit. Then, the operation of applying pressure while heating is sequentially performed on each of the pressurizing and heating stages, and then the operation of applying pressure while cooling is performed by intermittently feeding the lead frame between the pressurizing and cooling stages in the second straightening unit. It is preferable to perform the steps sequentially in the pressure cooling stage.

[0015]

BRIEF DESCRIPTION OF THE DRAWINGS FIG.

FIG. 1 is a plan view showing a state after a resin molding of a lead frame and a sealing aging for stabilizing a sealed resin in the embodiment of the present invention.
Semiconductor elements 33 are mounted on four element mounting portions 37 of a lead frame 30 made of a copper plate or a copper alloy plate having a thickness of 0.125 mm, respectively.
The connection areas at the tips of a large number of leads 31 protruding from the support 5 and the semiconductor element toward the semiconductor element are connected to a plurality of connection points of the semiconductor element, that is, bonding pads, by thin metal wires 34. In the figure, 1
Only two thin metal wires are illustrated for each semiconductor element. Then, the lead frame is closed with a resin sealing mold, a thermosetting epoxy resin is injected into the mold as an encapsulating resin, cured, and sealed aging is performed to stabilize the encapsulating resin. The semiconductor element, the thin metal wire, the connection region at the tip of the lead, and the vicinity thereof are sealed with the sealing resin portion 32. The part of the lead 31 in the sealing resin part 32 becomes an internal lead, and the part of the lead 31 protruding outside from the sealing resin part 32 becomes an external lead.

In this embodiment, a QFP (Quad Flat) in which leads are led out from each of the four sides of the sealing resin portion.
(Package) type semiconductor device, in the case of a 304-pin type, a lead (external lead) having a width of 0.2 mm
31 are arranged at a pitch of 0.5 mm and 76 lines are derived from one side. And the sealing resin part 32 is 40 mm × 40 mm
And its thickness is 3.7 mm.

The sealing resin portion 32 in this lead frame state
As shown in FIG. 2A and FIG.
In some cases, 2 ′ is convex and the other main surface 32 ″ is concave and curved, and the height difference H reaches 80 μm. If the lead is formed in this state, the height difference between the tip of the lead connected to the printed circuit board will be 80 μm, and a poorly connected lead will occur. On the other hand, if the solder layer of the printed circuit board is made thicker than the standard only in consideration of preventing such a connection failure of the lead from occurring, a short circuit failure of the printed circuit board pattern occurs due to the thick solder layer.

Therefore, in this embodiment, the steps shown in FIGS. 3 to 6 are introduced to correct the warpage of the sealing resin portion 32.

First, in FIG. 3, a lead frame 30 for holding a sealing resin portion 32 in a curved state is mounted on an aluminum transfer plate 41 and placed on a stainless steel heater block 39 having a heater 38. Then, preliminary heating of the sealing resin portion 32 is performed. The upper surface 41 'of the transport plate 41 which is in contact with the lower main surface 32''of the sealing resin portion 32 is a flat surface having an in-plane height difference of 15 μm or less.

Next, as shown in FIG. 4, the lead frame structures 30 and 32 are mounted on the upper surface 48 'of the lower heater block 48 while being mounted on the transfer plate 41, and the upper and lower portions of the upper heater block 48 are moved upward. The lower surface 49 'of the heater block 49 is brought into contact with the upper main surface 32' of the sealing resin portion 32. The lower heater block 48 is composed of a main body 44 containing a heater 46 and an upper plate 42 having an upper surface 48 ', both of which are made of stainless steel and formed integrally or separately so as to be separable. May be formed. Similarly, the upper heater block 49 is composed of a main body 45 containing a heater 46 and a lower plate 43 having a lower surface 49 ′, both of which are integrally formed of stainless steel or can be separated. May be formed individually. The upper surface 48 'of the heater blocks 48 and 49
The lower surface 49 'of the upper heater block 49 which is in contact with the upper main surface 32' of the sealing resin portion 32 is a flat surface with an in-plane height difference of 15 μm or less. Has become. Then, the weight 47 is placed on the upper heater block 49. In the state of FIG. 4, the sealing resin portion 32 is maintained at 150 ± 5 ° C. by the heaters 46 and 46, and about 125 g / cm is applied to the upper main surface 32 ′ of the sealing resin portion 32 through the heater block 49 by the weight of the weight 47. ^The operation of correcting the warpage of the sealing resin portion due to pressurization and heating by applying the pressure of ² for about 5 minutes is performed in the atmosphere. Then, the upper heater block 49 and the weight 47 are raised,
Lead frame structure 3 mounted on carrier plate 41
Take out 0, 32.

Next, as shown in FIG. 5, the lead frame structures 30 and 32 are mounted on the upper surface 58 'of the lower heat sink 58 while being mounted on the transport plate 41, and the upper heat sink 58 The lower surface 59 ′ of the sealing resin portion 32
Abut on the upper main surface 32 '. The lower heat sink 58 is composed of a main body 54 on which a heat radiating wing is formed and an upper plate 52 having an upper surface 58 ′, and both are formed integrally or separately so as to be separable. May be. Similarly, the upper heat sink 59 is composed of a main body 55 on which a heat radiating wing is formed and a lower plate 53 having a lower surface 59 ′, both of which may be formed integrally or separately so as to be separable. It may be formed. Upper surfaces 58 'and lower surfaces 59' of the heat sinks 58, 59.
Is a flat surface, but in particular, the lower surface 59 ′ of the upper heat sink 59 in contact with the upper main surface 32 ′ of the sealing resin portion 32.
Is a flat surface with an in-plane height difference of 15 μm or less.
A weight 57 is placed on the upper heat sink 59.
The sealing resin portion 32 at 150 ° C. in the step of FIG.
While being cooled in the atmosphere by the cooling air blown to the heat sinks 58 and 59 in the step of FIG.
Of the sealing resin portion 32 through the heat sink 59 due to its own weight.
An operation of correcting the warpage of the sealing resin portion by pressurizing and cooling by applying a pressure of about 125 g / cm ² to the upper main surface 32 ′ is performed. Thereafter, the upper heat sink 59 and the weight 57 are raised, and the lead frame structures 30 and 32 are taken out while being mounted on the transport plate 41.

The sealing resin portion 3 on which the above-mentioned correcting step has been performed.
2 is flattened as shown in FIG. For example, FIG.
The warpage of the sealing resin portion 32 which was 80 μm in the state of
m or less. Then, cut and remove the tie bar,
Deburring of the resin is performed, exterior processing such as solder plating is performed on the external lead, and a predetermined portion of the lead derived from the sealing resin portion is cut to separate the lead from the lead frame.

In the separating step, the main surfaces 32 ', 32 "
An intermediate product of a semiconductor device having a large number of external leads 31 led out in parallel with each other is obtained. And (A) of FIG.
As shown in (D), the external leads 31 led out from the encapsulating resin portion 32 are molded to complete the semiconductor device. That is, the base of the external lead 31 protruding from the encapsulating resin portion 32 is sandwiched from above and below by the flat lead pressing surface 66 of the upper die 65 and the flat lead pressing surface 64 of the lower die 63, and is fixed upward. The punch 67 is lowered from below to push down the external lead 31, and the lower surface 69 of the punch 67 and the flat lead tip holding surface 68 of the lower mold 63 form the external lead 3.
1 is sandwiched. As a result, the external lead 31 has a gull wing shape, that is, the external lead derived from the side surface of the encapsulating resin portion 32 is bent, and again at a position protruding 0.4 mm from the same surface as the lower main surface 32 '' of the encapsulating resin portion,
0.5m length bent in the direction parallel to the lower main surface 32 ''
m is formed into a shape in which a tip portion 21 is formed. This tip 21 is a conductor layer pad (not shown) of the printed circuit board 12.
In this embodiment, the sealing resin portion 32 is adhered.
Since the warp is corrected and flattened by the correcting step, the height difference between the tips 21 of the 304 external leads 31 in the embodiment is within 55 μm. Therefore, when this QFP type semiconductor device is mounted on the printed circuit board 12, a connection failure between the conductive layer pad formed on the upper surface of the printed circuit board 12 and the tip 21 of the external lead 31 does not occur.

Next, an example of an automatic manufacturing apparatus suitable for mass production using the above embodiment will be described with reference to FIG.

The mass production apparatus includes a supply section 71 having an elevator 81 and a stage 82, a pre-transfer section 72 having a stage 83, and a preheating section 7 having four stages 84.
A pressurizing and heating unit 74 having three and ten stages 85, an intermediate transfer unit 75 having stages 86 and 87, a pressurizing and cooling unit 76 having ten stages 89, and four stages 9
1, a rear transfer section 78 having a stage 92, a storage section 79 having a stage 93 and an elevator 94. The four stages 84 of the preheating unit 73 are each provided with a mechanism shown in FIG. Each of the ten stages 85 of the pressurizing and heating unit 74 is provided with a mechanism shown in FIG. Pressurized cooling unit 7
The mechanisms shown in FIG. 5 are disposed on the six stages 6 of 89, respectively. 4 stages 91 of the cooling unit 77
Are provided with mechanisms from which the upper heat sink 59 and the weight 57 are removed from FIG. In addition, the operation of vertically moving the upper heater block and heat sink and the weight in each stage, controlling the temperature, moving the lead frame, placing the stage on each stage, and taking out and storing from the magazine case are all performed automatically. Many of the lead frame structures 30, 32 in the state of FIG. 1 are stored in a magazine case, ascending the elevator 81, taken out one by one, and placed on the stage 82 on the transport plate 41 (FIGS. 3 to 5). The stage is placed step by step by the robot along the arrow 98 together with the transfer plate, and the robot is intermittently fed. The action of each stage corrects the warpage of the sealing resin portion, and the correction is completed. In the state 93, the lead frame structures 30, 32 are sequentially stored in the magazine case from the transfer plate on the stage 93 and descend the elevator 94.

Assuming that the residence time in each stage is 30 seconds and the moving time between the stages is 5 seconds, the time for preheating in the preheating unit 73 is 30 seconds × 4 = 120 seconds = 2 minutes,
The time of pressurization while being heated in the pressurization heating unit 74 is 30 seconds × 10 = 300 seconds = 5 minutes, and the time of pressurization while being cooled in the pressurization / cooling unit 76 is 30 seconds × 10 = 3.
00 seconds = 5 minutes, and the time for cooling at the stage in the cooling unit 77 is 30 seconds × 4 = 120 seconds = 2 minutes. Since there are 34 stages including the stage in each transfer section, it takes about 20 minutes to take out from the magazine case of the elevator 81, perform correction work, and store it in the magazine case of the elevator 94, but the lead frame structure is Since the sheets are sequentially fed one by one, a lead frame structure in which the warpage of the sealing resin portion is corrected one by one every 35 seconds is obtained.

FIG. 9 shows an example in which a part of the above embodiment is modified. In the above embodiment, a continuous upper heater block or heat sink and a lower conveying plate are used as members of the flat surface means for the four sealing resin portions of one lead frame. However, in FIG. 9, the upper heater block or the heat sink or both members 9 of the flat surface means are shown.
6 is divided into four parts, each of which is brought into contact with the upper main surface 32 'of each sealing resin part 32. Similarly, the lower heater block or the heat sink or the member 95 of the flat surface means of both is used.
Are divided into four parts, and are respectively brought into contact with the lower main surfaces 32 ″ of the sealing resin parts 32. This makes the mechanism of each step complicated, but has the merit that the control of flattening in each step can be individually performed according to the degree of warpage of each sealing resin portion. Of course, the case of FIG. 9 can also be applied to an automatic resin sealing device as shown in FIG.

[0029]

As described above, according to the present invention, the step of forming the external leads is performed after the step of correcting the warpage of the sealing resin portion, so that the ordinary lead is formed regardless of the state of each sealing resin portion. The external leads can be appropriately molded by using a molding die, and there is an effect that a connection failure when the semiconductor device is mounted on a printed circuit board can be eliminated.

[Brief description of the drawings]

FIG. 1 is a plan view showing a lead frame on which an encapsulating resin portion is formed in an embodiment of the present invention.

FIG. 2 is an enlarged view of an encapsulating resin part of FIG. 1,
(A) is a perspective view, (B) is a cross-sectional view taken along a diagonal line BB of (A).

FIG. 3 is a side view showing a preheating step in the embodiment of the present invention.

FIG. 4 is a side view showing a step of heating under pressure in the embodiment of the present invention.

FIG. 5 is a side view showing steps of pressurized cooling in the embodiment of the present invention.

FIG. 6 is a side view showing a lead frame in which warpage of a sealing resin portion has been corrected according to an embodiment of the present invention.

7A and 7B are diagrams showing a state in which a semiconductor device is completed from an intermediate product of the semiconductor device obtained according to the embodiment of the present invention. FIG. 7A shows a molding die for molding external leads and a semiconductor device before molding. FIG. 3B is a side sectional view showing a state of the molding, FIG. 3C is a front view showing the semiconductor device after lead molding, and FIG. 3D is a side view of FIG.

FIG. 8 is a schematic plan view showing an example in which a manufacturing apparatus suitable for mass production is configured using the embodiment of the present invention.

FIG. 9 is a side view showing a modification of the embodiment of the present invention.

10A and 10B are drawings showing a conventional technique, in which FIG. 10A is a perspective view showing a molding die for molding external leads and a semiconductor device before molding, FIG. 10B is a side sectional view showing a state of the molding,
(C) is a front view showing the semiconductor device after lead molding,
(D) is a side view thereof.

11A and 11B are diagrams showing another conventional technique, in which FIG. 11A is a side sectional view showing a molding die for molding an external lead and a part of the external lead being molded, and FIG. 11B is a semiconductor after the lead molding. FIG. 2 is a front view showing the apparatus, and FIG. 2C is a side view of FIG.

[Explanation of symbols]

 1,31 Lead (External lead) 2 Sealing resin part 3,23,63 Lower die 4,24,64 Lead pressing surface of lower die 5,25,65 Upper die 6,26,66 Upper die Lead holding surface 7,67 Punch 8,68 Lead tip holding surface of lower mold 9,69 Lower surface of punch 11 Lead (external lead) tip 12 Printed circuit board 30 Lead frame 32 Sealing resin part 32 ', 32' ' Main surface of sealing resin part 33 Semiconductor element 34 Fine metal wire 35 Lead frame outer frame 36 Lead frame support part 37 Lead frame element placement part 38 Heater 39 Heater block 41 Transport plate 41 ′ Upper flat surface of transport plate 42 Heater block upper plate 43 Heater block lower plate 44,45 Heater block main body 46 Heater 47 Weight 48,49 Heater block 4 8 ', 49' Flat surface of heater block 52 Upper plate of heat sink 53 Lower plate of heat sink 54, 55 Main body of heat sink 57 Weight 58, 59 Heat sink 58 ', 59' Flat surface of heat sink 71 Supply unit 72 Previous transfer unit 73 Preheating unit 74 Pressurizing / heating unit 75 Intermediate transfer unit 76 Pressurizing / cooling unit 77 Cooling unit 78 Rear transfer unit 79 Storage unit 81,94 Elevator 82-87,89,91-93 Stage 95,96 Flat surface divided Means of means

Claims (19)

(57) [Claims] 1. A semiconductor device is mounted on a predetermined portion of a lead frame, and connection regions of a plurality of leads of the lead frame are connected to a plurality of connection portions of the semiconductor device by thin metal wires, respectively. A step of sealing the metal thin wire and the connection area of the lead and the vicinity thereof with a sealing resin portion, a step of correcting warpage of both main surfaces of the sealing resin portion, and a plurality of steps derived from the sealing resin portion. A step of separating an intermediate product derived from the lead by a predetermined length from the corrected side surface of the sealing resin portion by cutting a predetermined portion of the lead from the lead frame, and separating the lead product from the lead frame. possess a step of forming the lead of the intermediate product, the warp of the sealing resin portion
In the step of correcting, both main surfaces of the sealing resin portion are formed by a pair of members.
A first step in which the main surface is pressed under heating while being sandwiched between flat surfaces of
After that, both main surfaces of the sealing resin portion are paired with each other.
Pressurizing the main surface while cooling by sandwiching between flat surfaces of the material
Step, the first step and the second step
A transport step of transporting the lead frame between
A method for manufacturing a resin-encapsulated semiconductor device, comprising: Wherein heating in the first step is carried out by a heater block, producing a resin encapsulated semiconductor device of claim 1, the cooling in the second step is characterized by being carried out by the heat sink Method. 3. One of the members in the first step is a transfer plate for mounting and transferring the lead frame, and the other member is the heater block, and the upper surface of the transfer plate and the lower surface of the heater block are respectively provided. It is a flat surface, one member in the second step is the same transport plate as in the first step, the other member is the heat sink, and the lower surface of the heat sink is a flat surface. The method for manufacturing a resin-sealed semiconductor device according to claim 2 . Wherein said heater block and a lower portion forming a body and the flat lower surface having a heat generating means is constructed by separated, the heat sink lower portion to form said flat lower surface and body having a heat dissipating means 4. The method of manufacturing a resin-encapsulated semiconductor device according to claim 3 , wherein the semiconductor device is configured to be separated from the semiconductor device. Wherein said heater block and a lower portion forming a body and the flat lower surface having a heat generating means are formed integrally, the heat sink lower portion to form said flat lower surface and body having a heat dissipating means 4. The method of manufacturing a resin-encapsulated semiconductor device according to claim 3 , wherein Sequentially performed, among a plurality of pressurized cooling stage the lead frame feeding intermittently wherein said lead frame between a plurality of pressurizing and heating stages of the first step is intermittently fed at these pressure heating stage claim 1, characterized in that sequentially carried out the second step in these pressurized cooling stage is, claim 2, claim 3, also claim 4
A method for manufacturing a resin-encapsulated semiconductor device according to claim 5 . 7. A method for producing a resin-encapsulated semiconductor device according to claim 1, characterized in that said intermediate product one of the lead frame is formed in plural. 8. A process of molding the lead, the sealing side bending the leads derived from the resin at a position protruding from one major surface and the same surface of the sealing resin portion, the one again 2. The method for manufacturing a resin-sealed semiconductor device according to claim 1, wherein a tip portion bent in a direction parallel to the main surface is formed. 9. A plurality of leads are provided in the sealing resin portion.
Contracts characterized by being derived from each of the sides
9. The method for manufacturing a resin-encapsulated semiconductor device according to claim 8 . 10. The method according to claim 1, wherein the sealing resin portion is made of a thermosetting epoxy resin. 11. A pair of upper and lower flat surface means sandwiching both main surfaces of a sealing resin portion formed on a lead frame by molding a semiconductor element from above and below, and a pair of upper and lower flat surface means via the flat surface means. A pressurizing unit for applying pressure to the main surface, and a heating unit, wherein the main surface of the sealing resin unit is pressurized by the pressing unit in a state where the temperature of the sealing resin unit is raised by the heating unit. A device for manufacturing a resin-encapsulated semiconductor device, wherein a warp of a main surface of the encapsulation resin portion is corrected by the method. 12. The method of claim 11, wherein the heating means is formed with a vertical side of the heater block positioned respectively above and below said upper and lower planar surfaces means, the pressure means is mounted on the upper heater block 12. The weight according to claim 11 , wherein the weight of the weight acts on the upper main surface of the sealing resin portion through the upper heater block and the upper flat surface means. Equipment for manufacturing resin-encapsulated semiconductor devices. 13. The upper flat surface means is a flat lower surface in contact with an upper main surface of the sealing resin portion of the upper heater block, and the lower flat surface means is a transfer plate for mounting and transferring the lead frame. 13. The apparatus for manufacturing a resin-sealed semiconductor device according to claim 12 , wherein the upper surface is a flat upper surface in contact with a lower main surface of the sealing resin portion. 14. The method of claim, characterized in that the lower part the upper heater block which forms a body and said flat lower surface having a heat generating means is constructed by separated 1
4. The apparatus for manufacturing a resin-encapsulated semiconductor device according to item 3 . 15. The upper heater block according to claim 13 , wherein a main body having a heating means and a lower portion forming said flat lower surface are integrally formed.
The manufacturing apparatus for a resin-sealed semiconductor device according to claim 1. 16. The flat surface means according to claim 13, wherein a height difference in a plane of each flat surface is within 15 μm.
The manufacturing apparatus for a resin-sealed semiconductor device according to claim 1. 17. The heater block according to claim 13, wherein said heater block is made of stainless steel, and said conveying plate is made of aluminum .
An apparatus for manufacturing a resin-encapsulated semiconductor device according to claim 15 . 18. A pair of heater blocks sandwiching both main surfaces of a sealing resin portion formed on a lead frame by molding a semiconductor element from above and below, and a pressure is applied to the main surface of the sealing resin portion via the heater block. A pair of heat sinks sandwiching both main surfaces of a sealing resin portion formed on a lead frame by molding a semiconductor element from above and below, and a first straightening portion having a first pressing means for applying pressure. A second correction unit having a second pressurizing means for applying pressure to the main surface of the sealing resin unit, wherein the sealing resin is heated by the heater block in the first correction unit. After the main surface of the part is pressed by the first pressing means, the lead frame is transferred to the second straightening part,
The main surface is pressurized by the second pressurizing means while cooling the sealing resin portion, which has become high temperature in the first straightening portion, with a heat sink of the second straightening portion. For manufacturing resin-sealed semiconductor devices. 19. The first straightening unit is provided with a plurality of pressurizing and heating stages, and each of the plurality of pressurizing and heating stages is provided with the pair of heater blocks and the first pressurizing means. The second straightening unit is provided with a plurality of pressure cooling stages, and each of the plurality of pressure cooling stages has a pair of the heat sink and the second cooling stage.
Pressure means is provided, and in the first straightening section, an operation of applying pressure while the lead frame is intermittently fed and heated between the plurality of pressure heating stages is sequentially performed in each of the pressure heating stages. Thereafter, in the second straightening section, the lead frame is intermittently fed between the plurality of pressurizing and cooling stages, and the operation of applying pressure while cooling is sequentially performed in each of the pressurizing and cooling stages. The apparatus for manufacturing a resin-encapsulated semiconductor device according to claim 18 , wherein: