JPS5816580A - 磁気抵抗効果素子のバイアス磁界印加方法 - Google Patents

磁気抵抗効果素子のバイアス磁界印加方法

Info

Publication number
JPS5816580A
JPS5816580A JP56115471A JP11547181A JPS5816580A JP S5816580 A JPS5816580 A JP S5816580A JP 56115471 A JP56115471 A JP 56115471A JP 11547181 A JP11547181 A JP 11547181A JP S5816580 A JPS5816580 A JP S5816580A
Authority
JP
Japan
Prior art keywords
magnetic field
film
magnetization
axis
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56115471A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6331116B2 (enExample
Inventor
Tetsuo Matsumura
松村　哲郎
Shuhei Tsuchimoto
修平 土本
Mitsuhiko Yoshikawa
吉川　光彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP56115471A priority Critical patent/JPS5816580A/ja
Publication of JPS5816580A publication Critical patent/JPS5816580A/ja
Publication of JPS6331116B2 publication Critical patent/JPS6331116B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Transmission And Conversion Of Sensor Element Output (AREA)
  • Hall/Mr Elements (AREA)
JP56115471A 1981-07-22 1981-07-22 磁気抵抗効果素子のバイアス磁界印加方法 Granted JPS5816580A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56115471A JPS5816580A (ja) 1981-07-22 1981-07-22 磁気抵抗効果素子のバイアス磁界印加方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56115471A JPS5816580A (ja) 1981-07-22 1981-07-22 磁気抵抗効果素子のバイアス磁界印加方法

Publications (2)

Publication Number Publication Date
JPS5816580A true JPS5816580A (ja) 1983-01-31
JPS6331116B2 JPS6331116B2 (enExample) 1988-06-22

Family

ID=14663355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56115471A Granted JPS5816580A (ja) 1981-07-22 1981-07-22 磁気抵抗効果素子のバイアス磁界印加方法

Country Status (1)

Country Link
JP (1) JPS5816580A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59169187A (ja) * 1983-03-16 1984-09-25 Hitachi Ltd 磁気抵抗効果素子の製造方法
DE3543603A1 (de) * 1984-12-14 1986-06-19 Nippondenso Co., Ltd., Kariya, Aichi Stellungsdetektor
US4835509A (en) * 1986-07-29 1989-05-30 Nippondenso Co., Ltd. Noncontact potentiometer
US5005064A (en) * 1987-08-21 1991-04-02 Nippondenso Co., Ltd. Device for detecting magnetism
US5432494A (en) * 1992-05-27 1995-07-11 Murata Manufacturing Co., Ltd. Magnetoresistance element
WO1996006329A1 (en) * 1994-08-23 1996-02-29 Matsushita Electric Industrial Co., Ltd. Magnetic signal detector
US5999379A (en) * 1997-12-11 1999-12-07 International Business Machines Corporation Spin valve read head with plasma produced metal oxide insulation layer between lead and shield layers and method of making
US9207292B2 (en) 2011-02-02 2015-12-08 Infineon Technologies Ag Magnetoresistive device and method for manufacturing the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02116246U (enExample) * 1989-03-01 1990-09-18

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59169187A (ja) * 1983-03-16 1984-09-25 Hitachi Ltd 磁気抵抗効果素子の製造方法
DE3543603A1 (de) * 1984-12-14 1986-06-19 Nippondenso Co., Ltd., Kariya, Aichi Stellungsdetektor
US4754221A (en) * 1984-12-14 1988-06-28 Nippondenso Co., Ltd. Position detecting apparatus for detecting a signal magnetic field indicative of a desired position
US4835509A (en) * 1986-07-29 1989-05-30 Nippondenso Co., Ltd. Noncontact potentiometer
US5005064A (en) * 1987-08-21 1991-04-02 Nippondenso Co., Ltd. Device for detecting magnetism
US5432494A (en) * 1992-05-27 1995-07-11 Murata Manufacturing Co., Ltd. Magnetoresistance element
WO1996006329A1 (en) * 1994-08-23 1996-02-29 Matsushita Electric Industrial Co., Ltd. Magnetic signal detector
US5663644A (en) * 1994-08-23 1997-09-02 Matsushita Electric Industrial Co., Ltd. Magnetoresistive sensor having a bias field applied at approximately 56°
US5999379A (en) * 1997-12-11 1999-12-07 International Business Machines Corporation Spin valve read head with plasma produced metal oxide insulation layer between lead and shield layers and method of making
US6162305A (en) * 1997-12-11 2000-12-19 International Business Machines Corporation Method of making spin valve read head with plasma produced metal oxide insulation layer between lead and shield layers
US9207292B2 (en) 2011-02-02 2015-12-08 Infineon Technologies Ag Magnetoresistive device and method for manufacturing the same
US9523747B2 (en) 2011-02-02 2016-12-20 Infineon Technologies Ag Magnetoresistive device and method for manufacturing the same

Also Published As

Publication number Publication date
JPS6331116B2 (enExample) 1988-06-22

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