JPS58164777A - 金属化合物被膜の形成方法 - Google Patents
金属化合物被膜の形成方法Info
- Publication number
- JPS58164777A JPS58164777A JP4571082A JP4571082A JPS58164777A JP S58164777 A JPS58164777 A JP S58164777A JP 4571082 A JP4571082 A JP 4571082A JP 4571082 A JP4571082 A JP 4571082A JP S58164777 A JPS58164777 A JP S58164777A
- Authority
- JP
- Japan
- Prior art keywords
- substrates
- vessel
- plates
- substrate
- metal compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 229910000765 intermetallic Inorganic materials 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 15
- 150000002736 metal compounds Chemical class 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 239000012495 reaction gas Substances 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4571082A JPS58164777A (ja) | 1982-03-24 | 1982-03-24 | 金属化合物被膜の形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4571082A JPS58164777A (ja) | 1982-03-24 | 1982-03-24 | 金属化合物被膜の形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58164777A true JPS58164777A (ja) | 1983-09-29 |
JPH0246668B2 JPH0246668B2 (enrdf_load_stackoverflow) | 1990-10-16 |
Family
ID=12726901
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4571082A Granted JPS58164777A (ja) | 1982-03-24 | 1982-03-24 | 金属化合物被膜の形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58164777A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5953837U (ja) * | 1982-09-27 | 1984-04-09 | 光洋機械産業株式会社 | セメントペ−スト用のミキサ− |
JPS6328871A (ja) * | 1986-07-22 | 1988-02-06 | Toshiba Corp | プラズマcvd処理装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53118235A (en) * | 1977-03-23 | 1978-10-16 | Vide & Traitement Sa | Plural cathode thermoion treatment furnace |
-
1982
- 1982-03-24 JP JP4571082A patent/JPS58164777A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53118235A (en) * | 1977-03-23 | 1978-10-16 | Vide & Traitement Sa | Plural cathode thermoion treatment furnace |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5953837U (ja) * | 1982-09-27 | 1984-04-09 | 光洋機械産業株式会社 | セメントペ−スト用のミキサ− |
JPS6328871A (ja) * | 1986-07-22 | 1988-02-06 | Toshiba Corp | プラズマcvd処理装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0246668B2 (enrdf_load_stackoverflow) | 1990-10-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3771976A (en) | Metal carbonitride-coated article and method of producing same | |
JPS61295377A (ja) | 薄膜形成方法 | |
EP0064884B1 (en) | Method and apparatus for coating by glow discharge | |
JP2002538308A5 (enrdf_load_stackoverflow) | ||
US3880728A (en) | Manufacture of lead dioxide/titanium composite electrodes | |
JPH02247393A (ja) | 耐久性電解用電極及びその製造方法 | |
JPS6063372A (ja) | 高硬度窒化ホウ素薄膜の製造方法 | |
JPS58164777A (ja) | 金属化合物被膜の形成方法 | |
JP2002177765A5 (ja) | 薄膜作製方法 | |
JPS58174568A (ja) | 金属化合物被膜の形成方法 | |
JPS58174569A (ja) | 金属化合物被膜の形成方法 | |
JPH02157123A (ja) | チタン酸バリウム薄膜の製造方法 | |
JPS5970767A (ja) | グロ−放電による被覆方法および装置 | |
JPS58151468A (ja) | 金属化合物被膜の形成方法 | |
JPS58133368A (ja) | 硼素皮膜の形成方法 | |
JPS6358798B2 (enrdf_load_stackoverflow) | ||
JPS6151629B2 (enrdf_load_stackoverflow) | ||
JPH03267361A (ja) | 硬質被膜とその製造方法 | |
JPH0772352B2 (ja) | 化学蒸着装置及び化学蒸着方法 | |
JP6797068B2 (ja) | 原子層堆積法による炭化チタン含有薄膜の製造方法 | |
JPS60245233A (ja) | 半導体装置の製造方法 | |
JP2567843B2 (ja) | ハイブリツドイオンプレ−テイング方法とその装置 | |
JPS6173881A (ja) | 気相成長装置 | |
JPH02274867A (ja) | 複合材料膜の製造方法 | |
JPS58117868A (ja) | 皮膜形成装置 |