JPS58164286A - 半導体レ−ザの製造方法 - Google Patents
半導体レ−ザの製造方法Info
- Publication number
- JPS58164286A JPS58164286A JP4828782A JP4828782A JPS58164286A JP S58164286 A JPS58164286 A JP S58164286A JP 4828782 A JP4828782 A JP 4828782A JP 4828782 A JP4828782 A JP 4828782A JP S58164286 A JPS58164286 A JP S58164286A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- cap
- laser
- type
- diffusing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000009792 diffusion process Methods 0.000 claims abstract description 22
- 239000012535 impurity Substances 0.000 claims abstract description 12
- 230000010355 oscillation Effects 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 9
- 125000005842 heteroatom Chemical group 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 8
- 238000005253 cladding Methods 0.000 description 4
- 241000272201 Columbiformes Species 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000012072 active phase Substances 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4828782A JPS58164286A (ja) | 1982-03-25 | 1982-03-25 | 半導体レ−ザの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4828782A JPS58164286A (ja) | 1982-03-25 | 1982-03-25 | 半導体レ−ザの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58164286A true JPS58164286A (ja) | 1983-09-29 |
| JPH0371796B2 JPH0371796B2 (enrdf_load_stackoverflow) | 1991-11-14 |
Family
ID=12799216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4828782A Granted JPS58164286A (ja) | 1982-03-25 | 1982-03-25 | 半導体レ−ザの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58164286A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6796831B1 (en) | 1999-10-18 | 2004-09-28 | J.S.T. Mfg. Co., Ltd. | Connector |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5189393A (en) * | 1975-01-31 | 1976-08-05 | Handotaireeza oyobi sonoseizohoho |
-
1982
- 1982-03-25 JP JP4828782A patent/JPS58164286A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5189393A (en) * | 1975-01-31 | 1976-08-05 | Handotaireeza oyobi sonoseizohoho |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6796831B1 (en) | 1999-10-18 | 2004-09-28 | J.S.T. Mfg. Co., Ltd. | Connector |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0371796B2 (enrdf_load_stackoverflow) | 1991-11-14 |
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