JPS58162078A - 半導体受光素子 - Google Patents

半導体受光素子

Info

Publication number
JPS58162078A
JPS58162078A JP57046028A JP4602882A JPS58162078A JP S58162078 A JPS58162078 A JP S58162078A JP 57046028 A JP57046028 A JP 57046028A JP 4602882 A JP4602882 A JP 4602882A JP S58162078 A JPS58162078 A JP S58162078A
Authority
JP
Japan
Prior art keywords
crystal
junction
type
layer
photodetector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57046028A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6259905B2 (enrdf_load_stackoverflow
Inventor
Haruo Nagai
治男 永井
Susumu Hata
進 秦
Susumu Kondo
進 近藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57046028A priority Critical patent/JPS58162078A/ja
Publication of JPS58162078A publication Critical patent/JPS58162078A/ja
Publication of JPS6259905B2 publication Critical patent/JPS6259905B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials

Landscapes

  • Light Receiving Elements (AREA)
JP57046028A 1982-03-23 1982-03-23 半導体受光素子 Granted JPS58162078A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57046028A JPS58162078A (ja) 1982-03-23 1982-03-23 半導体受光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57046028A JPS58162078A (ja) 1982-03-23 1982-03-23 半導体受光素子

Publications (2)

Publication Number Publication Date
JPS58162078A true JPS58162078A (ja) 1983-09-26
JPS6259905B2 JPS6259905B2 (enrdf_load_stackoverflow) 1987-12-14

Family

ID=12735584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57046028A Granted JPS58162078A (ja) 1982-03-23 1982-03-23 半導体受光素子

Country Status (1)

Country Link
JP (1) JPS58162078A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002314118A (ja) * 2001-04-16 2002-10-25 Sumitomo Electric Ind Ltd 受光素子
JP2006295216A (ja) * 1995-02-02 2006-10-26 Sumitomo Electric Ind Ltd ｐｉｎ型受光素子およびｐｉｎ型受光素子の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0280908U (enrdf_load_stackoverflow) * 1988-12-09 1990-06-21

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006295216A (ja) * 1995-02-02 2006-10-26 Sumitomo Electric Ind Ltd ｐｉｎ型受光素子およびｐｉｎ型受光素子の製造方法
JP2002314118A (ja) * 2001-04-16 2002-10-25 Sumitomo Electric Ind Ltd 受光素子

Also Published As

Publication number Publication date
JPS6259905B2 (enrdf_load_stackoverflow) 1987-12-14

Similar Documents

Publication Publication Date Title
JPH02159775A (ja) 半導体受光素子及びその製造方法
JPS6016474A (ja) ヘテロ多重接合型光検出器
US4794439A (en) Rear entry photodiode with three contacts
FR2872345A1 (fr) Procede de formation d'une zone de passivation sur un dispositif semi-conducteur, reseau de photodiodes sensibles au rayonnement infrarouge, son procede de fabrication et procede de passivation d'une surface d'un corps.
JP2002314118A (ja) 受光素子
CN115295683B (zh) 一种单载流子输运的平衡探测器及其制备方法
JPH01183174A (ja) 半導体受光素子
JP4861388B2 (ja) アバランシェホトダイオード
US5296384A (en) Bake-stable HgCdTe photodetector and method for fabricating same
JPS58162078A (ja) 半導体受光素子
JPH0492481A (ja) 光検知装置
JP4137568B2 (ja) 受信器
JPH02262379A (ja) 半導体受光装置及びその製造方法
JP2670289B2 (ja) 赤外線検出用フオトダイオードおよびその製造方法
JPH05102517A (ja) アバランシエフオトダイオードとその製造方法
JPS5938748B2 (ja) 半導体光検出装置
JP2798927B2 (ja) 半導体受光装置及びその製造方法
JPS63160283A (ja) 半導体受光素子
JPH0316275A (ja) 半導体受光素子の製造方法
JPH041740Y2 (enrdf_load_stackoverflow)
JPS6222471B2 (enrdf_load_stackoverflow)
JPH0719903B2 (ja) 光導電検知器
JP3055030B2 (ja) アバランシェ・フォトダイオードの製造方法
JPS62169376A (ja) フオトダイオ−ド
JPH01223779A (ja) 赤外線検出器