JPS6222471B2 - - Google Patents
Info
- Publication number
- JPS6222471B2 JPS6222471B2 JP53104958A JP10495878A JPS6222471B2 JP S6222471 B2 JPS6222471 B2 JP S6222471B2 JP 53104958 A JP53104958 A JP 53104958A JP 10495878 A JP10495878 A JP 10495878A JP S6222471 B2 JPS6222471 B2 JP S6222471B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- type
- silicon semiconductor
- photodiode
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10495878A JPS5533031A (en) | 1978-08-30 | 1978-08-30 | Light-detecting semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10495878A JPS5533031A (en) | 1978-08-30 | 1978-08-30 | Light-detecting semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5533031A JPS5533031A (en) | 1980-03-08 |
JPS6222471B2 true JPS6222471B2 (enrdf_load_stackoverflow) | 1987-05-18 |
Family
ID=14394597
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10495878A Granted JPS5533031A (en) | 1978-08-30 | 1978-08-30 | Light-detecting semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5533031A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4765211B2 (ja) * | 2001-07-06 | 2011-09-07 | 住友電気工業株式会社 | pin型受光素子 |
KR100590775B1 (ko) | 2004-12-08 | 2006-06-19 | 한국전자통신연구원 | 실리콘 발광 소자 |
WO2006062300A1 (en) * | 2004-12-08 | 2006-06-15 | Electronics And Telecommunications Research Institute | Silicon-based light emitting diode |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2252653B1 (enrdf_load_stackoverflow) * | 1973-11-28 | 1976-10-01 | Thomson Csf | |
JPS516494A (enrdf_load_stackoverflow) * | 1974-07-05 | 1976-01-20 | Hitachi Ltd |
-
1978
- 1978-08-30 JP JP10495878A patent/JPS5533031A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5533031A (en) | 1980-03-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4481523A (en) | Avalanche photodiodes | |
JP4220688B2 (ja) | アバランシェホトダイオード | |
JPH02159775A (ja) | 半導体受光素子及びその製造方法 | |
JPS5841668B2 (ja) | ヘテロセツゴウオ ユウスル アバランシエホトダイオ−ド | |
JP4084958B2 (ja) | 半導体受光装置の製造方法 | |
CN112490302B (zh) | 一种多电极的高速光电探测器及其制备方法 | |
CN106784132A (zh) | 单行载流子光探测器结构及其制作方法 | |
JP4861388B2 (ja) | アバランシェホトダイオード | |
JPH038117B2 (enrdf_load_stackoverflow) | ||
JPS6222471B2 (enrdf_load_stackoverflow) | ||
CN101232057B (zh) | 雪崩光电二极管 | |
JP4137568B2 (ja) | 受信器 | |
JPS5936437B2 (ja) | 半導体受光装置 | |
JPH05102517A (ja) | アバランシエフオトダイオードとその製造方法 | |
JPS6138872B2 (enrdf_load_stackoverflow) | ||
JPS6259905B2 (enrdf_load_stackoverflow) | ||
CN100423291C (zh) | 具有带掩埋氧化层的金属-半导体-金属(msm)光探测器的系统和方法 | |
JPH0316275A (ja) | 半導体受光素子の製造方法 | |
JP3055030B2 (ja) | アバランシェ・フォトダイオードの製造方法 | |
JPS6146076B2 (enrdf_load_stackoverflow) | ||
JPS61144076A (ja) | 半導体受光素子 | |
JPH0719903B2 (ja) | 光導電検知器 | |
CN117650191A (zh) | 一种基于p型硅片的光电探测器结构及其制备方法 | |
Averine et al. | Geometry optimization of the interdigitated metal-semiconductor-metal photodiode structures | |
JPH041740Y2 (enrdf_load_stackoverflow) |