JPS58161924A - 結晶配向性ニオブ酸ランタンの透明薄帯製造法 - Google Patents
結晶配向性ニオブ酸ランタンの透明薄帯製造法Info
- Publication number
- JPS58161924A JPS58161924A JP4154482A JP4154482A JPS58161924A JP S58161924 A JPS58161924 A JP S58161924A JP 4154482 A JP4154482 A JP 4154482A JP 4154482 A JP4154482 A JP 4154482A JP S58161924 A JPS58161924 A JP S58161924A
- Authority
- JP
- Japan
- Prior art keywords
- thin strip
- lanthanum niobate
- niobate
- transparent thin
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052746 lanthanum Inorganic materials 0.000 title claims abstract description 8
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 title claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 238000005096 rolling process Methods 0.000 claims abstract description 3
- 230000004907 flux Effects 0.000 claims abstract 2
- 239000013078 crystal Substances 0.000 claims description 9
- 238000010791 quenching Methods 0.000 claims description 6
- 239000000155 melt Substances 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052697 platinum Inorganic materials 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 238000001816 cooling Methods 0.000 abstract description 2
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 2
- 239000010935 stainless steel Substances 0.000 abstract description 2
- 238000003825 pressing Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910015806 BaTiO2 Inorganic materials 0.000 description 1
- 229910003334 KNbO3 Inorganic materials 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005293 ferrimagnetic effect Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4154482A JPS58161924A (ja) | 1982-03-16 | 1982-03-16 | 結晶配向性ニオブ酸ランタンの透明薄帯製造法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4154482A JPS58161924A (ja) | 1982-03-16 | 1982-03-16 | 結晶配向性ニオブ酸ランタンの透明薄帯製造法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58161924A true JPS58161924A (ja) | 1983-09-26 |
| JPS6251206B2 JPS6251206B2 (enrdf_load_stackoverflow) | 1987-10-29 |
Family
ID=12611357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4154482A Granted JPS58161924A (ja) | 1982-03-16 | 1982-03-16 | 結晶配向性ニオブ酸ランタンの透明薄帯製造法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58161924A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6396094B1 (en) * | 2000-05-12 | 2002-05-28 | Agilent Technologies, Inc. | Oriented rhombohedral composition of PbZr1-xTixO3 thin films for low voltage operation ferroelectric RAM |
| US8426077B2 (en) | 2004-12-23 | 2013-04-23 | Universitetet I Oslo | Proton conductors |
| JP2014125656A (ja) * | 2012-12-26 | 2014-07-07 | Japan Fine Ceramics Center | 遮熱コーティング用材料 |
-
1982
- 1982-03-16 JP JP4154482A patent/JPS58161924A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6396094B1 (en) * | 2000-05-12 | 2002-05-28 | Agilent Technologies, Inc. | Oriented rhombohedral composition of PbZr1-xTixO3 thin films for low voltage operation ferroelectric RAM |
| US8426077B2 (en) | 2004-12-23 | 2013-04-23 | Universitetet I Oslo | Proton conductors |
| JP2014125656A (ja) * | 2012-12-26 | 2014-07-07 | Japan Fine Ceramics Center | 遮熱コーティング用材料 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6251206B2 (enrdf_load_stackoverflow) | 1987-10-29 |
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