JPS58158987A - 分布帰還形半導体レ−ザ - Google Patents
分布帰還形半導体レ−ザInfo
- Publication number
- JPS58158987A JPS58158987A JP57041315A JP4131582A JPS58158987A JP S58158987 A JPS58158987 A JP S58158987A JP 57041315 A JP57041315 A JP 57041315A JP 4131582 A JP4131582 A JP 4131582A JP S58158987 A JPS58158987 A JP S58158987A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- substrate
- light
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 239000012535 impurity Substances 0.000 claims abstract description 12
- 230000003287 optical effect Effects 0.000 claims description 16
- 238000000605 extraction Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 27
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 17
- 230000010355 oscillation Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 230000000737 periodic effect Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 241000272201 Columbiformes Species 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- MODGUXHMLLXODK-UHFFFAOYSA-N [Br].CO Chemical compound [Br].CO MODGUXHMLLXODK-UHFFFAOYSA-N 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 210000001217 buttock Anatomy 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57041315A JPS58158987A (ja) | 1982-03-16 | 1982-03-16 | 分布帰還形半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57041315A JPS58158987A (ja) | 1982-03-16 | 1982-03-16 | 分布帰還形半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58158987A true JPS58158987A (ja) | 1983-09-21 |
| JPS6320037B2 JPS6320037B2 (enrdf_load_stackoverflow) | 1988-04-26 |
Family
ID=12605072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57041315A Granted JPS58158987A (ja) | 1982-03-16 | 1982-03-16 | 分布帰還形半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58158987A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4941148A (en) * | 1986-11-12 | 1990-07-10 | Sharp Kabushiki Kaisha | Semiconductor laser element with a single longitudinal oscillation mode |
-
1982
- 1982-03-16 JP JP57041315A patent/JPS58158987A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4941148A (en) * | 1986-11-12 | 1990-07-10 | Sharp Kabushiki Kaisha | Semiconductor laser element with a single longitudinal oscillation mode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6320037B2 (enrdf_load_stackoverflow) | 1988-04-26 |
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