JPS58158929A - プラズマ発生装置 - Google Patents

プラズマ発生装置

Info

Publication number
JPS58158929A
JPS58158929A JP57040757A JP4075782A JPS58158929A JP S58158929 A JPS58158929 A JP S58158929A JP 57040757 A JP57040757 A JP 57040757A JP 4075782 A JP4075782 A JP 4075782A JP S58158929 A JPS58158929 A JP S58158929A
Authority
JP
Japan
Prior art keywords
self
bias voltage
frequency power
plasma
variable reactance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57040757A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0119261B2 (cg-RX-API-DMAC7.html
Inventor
Kiyoshi Takahashi
清 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Kokusai Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Co Ltd filed Critical Kokusai Electric Co Ltd
Priority to JP57040757A priority Critical patent/JPS58158929A/ja
Publication of JPS58158929A publication Critical patent/JPS58158929A/ja
Publication of JPH0119261B2 publication Critical patent/JPH0119261B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP57040757A 1982-03-17 1982-03-17 プラズマ発生装置 Granted JPS58158929A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57040757A JPS58158929A (ja) 1982-03-17 1982-03-17 プラズマ発生装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57040757A JPS58158929A (ja) 1982-03-17 1982-03-17 プラズマ発生装置

Publications (2)

Publication Number Publication Date
JPS58158929A true JPS58158929A (ja) 1983-09-21
JPH0119261B2 JPH0119261B2 (cg-RX-API-DMAC7.html) 1989-04-11

Family

ID=12589490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57040757A Granted JPS58158929A (ja) 1982-03-17 1982-03-17 プラズマ発生装置

Country Status (1)

Country Link
JP (1) JPS58158929A (cg-RX-API-DMAC7.html)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6098630A (ja) * 1983-10-13 1985-06-01 アメリカン　テレフオン　アンド　テレグラフ　カムパニー デバイスの製作方法
JPS60116125A (ja) * 1983-11-29 1985-06-22 Zenko Hirose 成膜方法
JPS60187025A (ja) * 1984-03-07 1985-09-24 Ulvac Corp プラズマ放電装置に於けるセルフバイアス電圧制御装置
JPS6147642A (ja) * 1984-08-14 1986-03-08 Teru Saamuko Kk プラズマ発生装置
JPS6164123A (ja) * 1984-09-06 1986-04-02 Matsushita Electric Ind Co Ltd プラズマ化学気相堆積方法
JPS61119029A (ja) * 1984-11-14 1986-06-06 Nippon Soken Inc 水素化アモルフアス半導体薄膜の製造方法
JPS61166028A (ja) * 1985-01-17 1986-07-26 Anelva Corp ドライエツチング装置
US4602981A (en) * 1985-05-06 1986-07-29 International Business Machines Corporation Monitoring technique for plasma etching
JPH01275760A (ja) * 1988-04-26 1989-11-06 Shimadzu Corp プラズマ付着装置
US5288971A (en) * 1991-08-09 1994-02-22 Advanced Energy Industries, Inc. System for igniting a plasma for thin film processing
JPH06325897A (ja) * 1993-05-17 1994-11-25 Adtec:Kk 高周波プラズマ用インピーダンス整合装置
WO2002101784A1 (en) * 2001-06-07 2002-12-19 Lam Research Corporation Plasma processor
US6633017B1 (en) 1997-10-14 2003-10-14 Advanced Energy Industries, Inc. System for plasma ignition by fast voltage rise
WO2004059716A1 (en) 2002-12-20 2004-07-15 Lam Research Corporation A system and method for controlling plasma with an adjustable coupling to ground circuit
WO2008136491A1 (ja) * 2007-04-27 2008-11-13 Canon Kabushiki Kaisha 電子写真用ローラ部材の製造方法
US7527016B2 (en) 2002-07-12 2009-05-05 Tokyo Electron Limited Plasma processing apparatus
JP2010524156A (ja) * 2007-03-30 2010-07-15 ラム リサーチ コーポレーション ウエハに面する電極に直流電圧を誘導するための方法および装置
CN113179574A (zh) * 2021-04-23 2021-07-27 山东大学 用于标定区域等离子体分布的多通道朗缪尔探针诊断系统

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5440079A (en) * 1977-09-05 1979-03-28 Fujitsu Ltd Plasma etching method
JPS55118637A (en) * 1979-03-06 1980-09-11 Chiyou Lsi Gijutsu Kenkyu Kumiai Plasma etching apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5440079A (en) * 1977-09-05 1979-03-28 Fujitsu Ltd Plasma etching method
JPS55118637A (en) * 1979-03-06 1980-09-11 Chiyou Lsi Gijutsu Kenkyu Kumiai Plasma etching apparatus

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6098630A (ja) * 1983-10-13 1985-06-01 アメリカン　テレフオン　アンド　テレグラフ　カムパニー デバイスの製作方法
JPS60116125A (ja) * 1983-11-29 1985-06-22 Zenko Hirose 成膜方法
JPS60187025A (ja) * 1984-03-07 1985-09-24 Ulvac Corp プラズマ放電装置に於けるセルフバイアス電圧制御装置
JPS6147642A (ja) * 1984-08-14 1986-03-08 Teru Saamuko Kk プラズマ発生装置
JPS6164123A (ja) * 1984-09-06 1986-04-02 Matsushita Electric Ind Co Ltd プラズマ化学気相堆積方法
JPS61119029A (ja) * 1984-11-14 1986-06-06 Nippon Soken Inc 水素化アモルフアス半導体薄膜の製造方法
JPS61166028A (ja) * 1985-01-17 1986-07-26 Anelva Corp ドライエツチング装置
US4602981A (en) * 1985-05-06 1986-07-29 International Business Machines Corporation Monitoring technique for plasma etching
JPH01275760A (ja) * 1988-04-26 1989-11-06 Shimadzu Corp プラズマ付着装置
US5288971A (en) * 1991-08-09 1994-02-22 Advanced Energy Industries, Inc. System for igniting a plasma for thin film processing
JPH06325897A (ja) * 1993-05-17 1994-11-25 Adtec:Kk 高周波プラズマ用インピーダンス整合装置
US6633017B1 (en) 1997-10-14 2003-10-14 Advanced Energy Industries, Inc. System for plasma ignition by fast voltage rise
JP2004535039A (ja) * 2001-06-07 2004-11-18 ラム　リサーチ　コーポレーション プラズマ処理装置方法および装置
WO2002101784A1 (en) * 2001-06-07 2002-12-19 Lam Research Corporation Plasma processor
JP4897195B2 (ja) * 2001-06-07 2012-03-14 ラム リサーチ コーポレーション プラズマ処理方法、プラズマ処理装置およびプラズマ処理装置の製造方法
US7527016B2 (en) 2002-07-12 2009-05-05 Tokyo Electron Limited Plasma processing apparatus
US8251011B2 (en) 2002-07-12 2012-08-28 Tokyo Electron Limited Plasma processing apparatus
US8518211B2 (en) 2002-12-20 2013-08-27 Lam Research Corporation System and method for controlling plasma with an adjustable coupling to ground circuit
CN100380606C (zh) * 2002-12-20 2008-04-09 朗姆研究公司 等离子体处理系统
JP2006511059A (ja) * 2002-12-20 2006-03-30 ラム リサーチ コーポレーション 半導体チャンバ、及びプラズマ処理チャンバ内のプラズマの制御方法
WO2004059716A1 (en) 2002-12-20 2004-07-15 Lam Research Corporation A system and method for controlling plasma with an adjustable coupling to ground circuit
US20130306240A1 (en) * 2002-12-20 2013-11-21 Lam Research Corporation System and Method for Controlling Plasma With an Adjustable Coupling to Ground Circuit
US9190302B2 (en) * 2002-12-20 2015-11-17 Lam Research Corporation System and method for controlling plasma with an adjustable coupling to ground circuit
JP2010524156A (ja) * 2007-03-30 2010-07-15 ラム リサーチ コーポレーション ウエハに面する電極に直流電圧を誘導するための方法および装置
US8450635B2 (en) 2007-03-30 2013-05-28 Lam Research Corporation Method and apparatus for inducing DC voltage on wafer-facing electrode
WO2008136491A1 (ja) * 2007-04-27 2008-11-13 Canon Kabushiki Kaisha 電子写真用ローラ部材の製造方法
US7947339B2 (en) 2007-04-27 2011-05-24 Canon Kabushiki Kaisha Process for producing electrophotographic roller member
CN101669074B (zh) 2007-04-27 2012-06-27 佳能株式会社 用于生产电子照相辊构件的方法
CN113179574A (zh) * 2021-04-23 2021-07-27 山东大学 用于标定区域等离子体分布的多通道朗缪尔探针诊断系统
CN113179574B (zh) * 2021-04-23 2022-06-07 山东大学 用于标定区域等离子体分布的多通道朗缪尔探针诊断系统

Also Published As

Publication number Publication date
JPH0119261B2 (cg-RX-API-DMAC7.html) 1989-04-11

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