JPS58151037A - 半導体装置用ｐｂ合金ろう材 - Google Patents

半導体装置用ｐｂ合金ろう材

Info

Publication number
JPS58151037A
JPS58151037A JP57032678A JP3267882A JPS58151037A JP S58151037 A JPS58151037 A JP S58151037A JP 57032678 A JP57032678 A JP 57032678A JP 3267882 A JP3267882 A JP 3267882A JP S58151037 A JPS58151037 A JP S58151037A
Authority
JP
Japan
Prior art keywords
brazing material
alloy brazing
less
content
radioactive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57032678A
Other languages
English (en)
Inventor
Naoyuki Hosoda
細田　直之
Naoki Uchiyama
直樹 内山
Ryusuke Kawanaka
川中　龍介
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Electric Corp
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, Mitsubishi Metal Corp filed Critical Mitsubishi Electric Corp
Priority to JP57032678A priority Critical patent/JPS58151037A/ja
Priority to KR1019830000735A priority patent/KR900000169B1/ko
Priority to DE19833334291 priority patent/DE3334291C2/de
Priority to NL8320060A priority patent/NL8320060A/nl
Priority to GB08328561A priority patent/GB2126248B/en
Priority to PCT/JP1983/000065 priority patent/WO1983003163A1/ja
Priority to US06/552,038 priority patent/US4512950A/en
Priority to EP83900801A priority patent/EP0103025B1/en
Publication of JPS58151037A publication Critical patent/JPS58151037A/ja
Priority to SG805/89A priority patent/SG80589G/en
Priority to HK520/90A priority patent/HK52090A/xx
Pending legal-status Critical Current

Links

Classifications

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    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 この発明は、通常のＩＣは勿論のこと、大容量メモリー
素子である６４ＫＲＡＭや２５６ＫＲＡＭ等のメモリー
や、各種の超ＬＳＩ等の半導体装置のアッセンブリーに
際して、部材接合用ろう材として使用するのに適したｐ
ｂ金合金関するものである。
一般に、半導体装置の１つとして、第１図に概略縦断面
図で示されるＩＣセラミック・パッケージが知られて−
いる。このＩＣセラミック・パッケージは、主として所
定のキャピテイをもったセラミックケースｌと、このキ
ャビティの底部にろう付けされたシリコンチップ２と、
ボンディングアルミ線３と、セラミックケース１の上面
にろう付けされた封着板４で構成されている。また、こ
のＩＣセラミック・パッケージのアッセンブリーに際シ
ては、シリコンチップ２および封着板４のろう付けに、
Ａｕ−８ｉ合金ろう材やＡｕ−Ｓｎ合金ろう材が使用さ
れている。
このように半導体装置のアッセンブリーＫｉｄ、ろう材
としてＡｕ合金が使用されており、確かにＡｕ合金ろう
材の使用によって信頼性の高いものとなる反面、コスト
高となるのを避けることができないものである。
そこで、本発明者は、上述のような観点から、従来、半
導体装置のアッセンブリーに使用されているＡｕ合金ろ
う材に匹適する信頼性をもち、かつＡｕ合金ろう材に比
して安価なろう材を得べく研究を行なった結果、Ｓｎお
よびＩｎのうちの１種または２種＝１〜６５％を含有し
、さらに必要に応じてＡＣ１〜１０％を含有し、残りが
Ｐｂと不可避不純物からなる組成（以上重量係）を有し
、かつ不可避不純物としての放射性同位元素の含有量を
５０ｐｐｂ　（１ｐｐｂは１０億分の１）未満として、
放射性α粒子のカウント数を０．５０ＰＨ（カウント／
時）／ｃＩ！以下としたＰｂ合金は、これを半導体装置
のアッセンブリーにろう材として使用した場合、良好な
ぬれ性および接着強度を示し、かつメモリーエラーの発
生がなく、きわめて信頼性の高いものです あるという知見を得たのであり、しかもこのＰｂ合金ろ
う材はＡｕなどの高価な成分を含有しないために、きわ
めて安価なものである。
この発明は、上記知見にもとづいてなされたものであっ
て、以下に成分組成を上記の通りに限定した理由を説明
する。
（ａ）　　ＳｎおよびＩｎ これらの成分は、ろう材に良好なぬれ性を付与し、かつ
強固な接着強度を確保するために含有させるが、その含
有量が１％未満ではろう材に所定の前記特性を゛付与す
ることができず、一方６５チを越えて含有させても前記
特性改善によシ一層の向上効果が得られないことから、
その含有量を１〜６５ｑ６と定めた。
（ｂ）　　ｐ、ｙ Ａ２成分には、ぬれ性および接着強度を一段と向上させ
る作用があるので、これらの特性が要求きれる場合に必
要に応じて含有されるが、その含有量が１％未満では前
記作用に所望の向上効果が得られす、一方１０チを越え
て含有させてもより一段の向上効果が得られず、経済性
を考慮して、その含有量を１〜１０チと定めた。
（ｃ）　　不可避不純物としての放射性同位元素通常の
製錬法にて製造されたｐｂ中には、Ｕ、Ｔｈなどの放射
性同位元素が５０ｐｐｂ以上も含有し、これは放射性α
粒子のカウント数で数カラントル数１０００ＰＨ／−に
相当し、このように放射性同位元素の含有量が高いｐｂ
ｌ含有するＰｂ合金ろう材を、半導体装置のアッセンブ
リーに使用すると、このＰｂ合金ろう材から発する放射
性α粒子がメモリーエラーの原因となる匁どの悪影響を
及はし、信頼性のないものとなる。したがって、これら
の放射性同位元素による亜影響が現われないようにする
ためには、不可避不純物としての放射性同位元素の含有
量ｆ　５０　ｐｐｂ未満として、放射性α粒子のカウン
ト数ｆ　０．５０　Ｐ　Ｈ／　ｃｄ１以下にする必要が
あるのである。
つぎ゛に、この発明のＰｂ合金ろう材を実施例により比
較例と対比しながら説明する。
実施例 通常の溶解法により、それぞれ第１表に示される成分組
成をもった本発明Ｐｂ合金１〜１２および比較Ｐｂ合金
１〜１２の溶湯を調整し、通常の条件にて鋳造し、圧延
して板厚：０．０５＋＋＋＋＋１の板材とし、この板材
から打抜きにて縦：　１５　ｗｎ　Ｘ横：１０ｗ×幅＝
１簡の寸法をもった窓枠状ろう材を作製した。
ついで、この結果得られた窓枠状の本発明Ｐｂ合金ろう
材１〜１２および比較Ｐｂ合金ろう材１〜１２を、第１
図に示されるＩＣセラミック・パッケージのアラセン、
プリーに際して、封着板のセラミックケースへのろう付
けに使用し、接着強度およびぬれ性を観察するとともに
、α粒子のカウント数およびメモリーエラーの測定を行
なった。ぬれ性は、ろうが接着面に完全にまわっている
場合をＯ印、ろうの寸わらない部分が少しでもある場合
をＸ印で評価した。
第１表に示される結果から、本発明Ｐｂ合金ろう材１〜
１２は、いずれもすぐれたぬれ性および接着強度を示し
、また放射性同位元素の含有量が５０１）ｐｂ未満なの
で、放射性α粒子のカウント数もｏ、５ｃｐＨ／ｃｔＩ
ｌ以下となっており、ろう材が原因のメモリーエラーの
発生も皆無となっていることが明らかである。これに対
して比較ｐｂ金合金う材１〜１２は、ＳｎまたはＩｎの
含有量がこの発明の範囲から外れて低いために、接着強
度が低く、かつぬれ性の悪いものになっている。また比
較Ｐｂ合金ろう材３〜１２は接着強度は強く、ぬれ性は
良好であるが放射性同位元素の含有量が多いためメモリ
ーエラーが有又は多発しており信頼性に欠ける結果とな
つ℃いる。
上述のように、この発明のＰｂ合金ろう材は、すぐれた
接着強度およびぬれ性を有し、かつ放射性α粒子のカウ
ント数も０．５０　Ｐ　Ｈ／ｃＪ以下なので。
半導体装置のアッセンブリーに使用するのに適するもの
であ匁、しかも安価である。
【図面の簡単な説明】
第１図はＩＣセラミック・パッケージの概略縦断面図で
ある。図面において。 ｌ・・・セラミックケース、　　２・・シリコンチップ
、３・・・ボンディングアルミ線、　４・・・封着板。 出願人　　三菱金属株式会社 出願人　　三菱電機株式会社 代理人　　富　　１）　和　夫

Claims (2)

    【特許請求の範囲】
  1. （１）　　ＳｎおよびＩｎのうちの１種または２種：１
    〜６５％を含有し、残りがｐｂと不可避不純物からなる
    組成（以上重量％）を有し、かつ不可避不純物としての
    放射性同位元素の含有量を５０１）ｐ’ｂ未満として、
    放射性ω粒子のカウント数を０．５ＣＰＨ／ＣＩ！以下
    としたことを特徴とする半導体装置用ｐｂ金合金う材。
  2. （２）　　Ｓｎおよび工ｎのうちの１種または２種：１
    〜６５％を含有し、さらにＡｆ：１〜１０％を含有し、
    残シがｐｂと不可避不純物からなる組成（以上重量％）
    を有し、かつ不可避不純物としての放射性同位元素の含
    有量を５０　ｐｐｂ未満として、放射性α粒子のカウン
    ト数を０．５ｃＢＨ／ｃｒｌ以下としたことを特徴とす
    る半導体装置用ｐｂ金合金う材。
JP57032678A 1982-03-02 1982-03-02 半導体装置用ｐｂ合金ろう材 Pending JPS58151037A (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP57032678A JPS58151037A (ja) 1982-03-02 1982-03-02 半導体装置用ｐｂ合金ろう材
KR1019830000735A KR900000169B1 (ko) 1982-03-02 1983-02-23 반도체 장치용 Pb 합금납재
PCT/JP1983/000065 WO1983003163A1 (en) 1982-03-02 1983-03-02 Pb alloy solder for semiconductor device
NL8320060A NL8320060A (nl) 1982-03-02 1983-03-02 Zacht soldeer van pb-legering voor halfgeleiderorganen.
GB08328561A GB2126248B (en) 1982-03-02 1983-03-02 Pb alloy solder for semiconductor device
DE19833334291 DE3334291C2 (de) 1982-03-02 1983-03-02 Weichlot aus einer Pb enthaltenden Legierung für Halbleiter-Vorrichtungen
US06/552,038 US4512950A (en) 1982-03-02 1983-03-02 Lead alloy soft solder containing radioactive particles used to make more reliable semiconductor devices
EP83900801A EP0103025B1 (en) 1982-03-02 1983-03-02 Pb alloy solder for semiconductor device
SG805/89A SG80589G (en) 1982-03-02 1989-12-07 Soft solder of pb alloy for semiconductor devices
HK520/90A HK52090A (en) 1982-03-02 1990-07-12 Soft solder of pb alloy for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57032678A JPS58151037A (ja) 1982-03-02 1982-03-02 半導体装置用ｐｂ合金ろう材

Publications (1)

Publication Number Publication Date
JPS58151037A true JPS58151037A (ja) 1983-09-08

Family

ID=12365528

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57032678A Pending JPS58151037A (ja) 1982-03-02 1982-03-02 半導体装置用ｐｂ合金ろう材

Country Status (10)

Country Link
US (1) US4512950A (ja)
EP (1) EP0103025B1 (ja)
JP (1) JPS58151037A (ja)
KR (1) KR900000169B1 (ja)
DE (1) DE3334291C2 (ja)
GB (1) GB2126248B (ja)
HK (1) HK52090A (ja)
NL (1) NL8320060A (ja)
SG (1) SG80589G (ja)
WO (1) WO1983003163A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60206596A (ja) * 1984-03-30 1985-10-18 Mitsubishi Metal Corp 半導体装置用ｐｂ合金ろう材
JPS61222142A (ja) * 1985-03-27 1986-10-02 Mitsubishi Metal Corp Ｐｂ合金ろう材の製造に用いられる高純度Ｐｂ材
JPS626793A (ja) * 1985-07-03 1987-01-13 Mitsubishi Metal Corp はんだペ−スト用Ｐｂ合金粉末
JPH04352429A (ja) * 1991-05-30 1992-12-07 Sharp Corp 半田バンプの形成方法
US9666547B2 (en) 2002-10-08 2017-05-30 Honeywell International Inc. Method of refining solder materials

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US4622205A (en) * 1985-04-12 1986-11-11 Ibm Corporation Electromigration lifetime increase of lead base alloys
US4654275A (en) * 1985-11-27 1987-03-31 Allied Corporation Storage life of Pb-In-Ag solder foil by Sn addition
DE3785720T2 (de) * 1986-09-25 1993-08-12 Toshiba Kawasaki Kk Verfahren zum herstellen eines filmtraegers.
USRE33313E (en) * 1987-09-21 1990-08-28 Cominco Ltd. Method for making low alpha count lead
US5066614A (en) * 1988-11-21 1991-11-19 Honeywell Inc. Method of manufacturing a leadframe having conductive elements preformed with solder bumps
US5161729A (en) * 1988-11-21 1992-11-10 Honeywell Inc. Package to semiconductor chip active interconnect site method
US5010387A (en) * 1988-11-21 1991-04-23 Honeywell Inc. Solder bonding material
JPH02310330A (ja) * 1989-05-25 1990-12-26 Taiho Kogyo Co Ltd すべり軸受用オーバレイ合金
US5011658A (en) * 1989-05-31 1991-04-30 International Business Machines Corporation Copper doped low melt solder for component assembly and rework
AU5926490A (en) * 1989-06-01 1991-01-07 Olin Corporation Metal and metal alloys with improved solderability shelf life and method of preparing the same
FR2697125B1 (fr) * 1992-10-20 1994-12-09 Thomson Csf Procédé de montage d'une microstructure et microstructure montée selon le procédé.
DE4344193C2 (de) * 1993-12-23 1996-09-05 Foerster Inst Dr Friedrich Verfahren zur Anbringung einer Schutzschicht und Schutzelement
JP3617604B2 (ja) * 1998-09-18 2005-02-09 ヒロセ電機株式会社 パルス信号発生装置

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JPS5734352A (en) * 1980-08-09 1982-02-24 Mitsubishi Electric Corp Semiconductor device

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DE1298387C2 (de) * 1964-02-06 1973-07-26 Semikron Gleichrichterbau Halbleiter-Anordnung
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JPS6015152B2 (ja) * 1980-01-09 1985-04-17 株式会社日立製作所 樹脂封止半導体メモリ装置
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60206596A (ja) * 1984-03-30 1985-10-18 Mitsubishi Metal Corp 半導体装置用ｐｂ合金ろう材
JPS61222142A (ja) * 1985-03-27 1986-10-02 Mitsubishi Metal Corp Ｐｂ合金ろう材の製造に用いられる高純度Ｐｂ材
JPS626793A (ja) * 1985-07-03 1987-01-13 Mitsubishi Metal Corp はんだペ−スト用Ｐｂ合金粉末
JPH04352429A (ja) * 1991-05-30 1992-12-07 Sharp Corp 半田バンプの形成方法
US9666547B2 (en) 2002-10-08 2017-05-30 Honeywell International Inc. Method of refining solder materials

Also Published As

Publication number Publication date
SG80589G (en) 1990-07-06
US4512950A (en) 1985-04-23
GB8328561D0 (en) 1983-11-30
GB2126248B (en) 1986-12-10
EP0103025A4 (en) 1985-10-01
DE3334291T (de) 1984-07-12
GB2126248A (en) 1984-03-21
WO1983003163A1 (en) 1983-09-15
KR840003919A (ko) 1984-10-04
KR900000169B1 (ko) 1990-01-23
EP0103025A1 (en) 1984-03-21
DE3334291C2 (de) 1991-07-11
HK52090A (en) 1990-07-20
EP0103025B1 (en) 1989-11-02
NL8320060A (nl) 1984-02-01

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