JPS58147165A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58147165A
JPS58147165A JP57030002A JP3000282A JPS58147165A JP S58147165 A JPS58147165 A JP S58147165A JP 57030002 A JP57030002 A JP 57030002A JP 3000282 A JP3000282 A JP 3000282A JP S58147165 A JPS58147165 A JP S58147165A
Authority
JP
Japan
Prior art keywords
layer
diode
transistor
semiconductor
auxiliary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57030002A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6357946B2 (enrdf_load_stackoverflow
Inventor
Takashi Mimura
高志 三村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57030002A priority Critical patent/JPS58147165A/ja
Publication of JPS58147165A publication Critical patent/JPS58147165A/ja
Publication of JPS6357946B2 publication Critical patent/JPS6357946B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Logic Circuits (AREA)
JP57030002A 1982-02-26 1982-02-26 半導体装置 Granted JPS58147165A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57030002A JPS58147165A (ja) 1982-02-26 1982-02-26 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57030002A JPS58147165A (ja) 1982-02-26 1982-02-26 半導体装置

Publications (2)

Publication Number Publication Date
JPS58147165A true JPS58147165A (ja) 1983-09-01
JPS6357946B2 JPS6357946B2 (enrdf_load_stackoverflow) 1988-11-14

Family

ID=12291693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57030002A Granted JPS58147165A (ja) 1982-02-26 1982-02-26 半導体装置

Country Status (1)

Country Link
JP (1) JPS58147165A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0258530A3 (de) * 1986-09-01 1990-04-25 Licentia Patent-Verwaltungs-GmbH Photoempfänger
JP2007520884A (ja) * 2004-01-23 2007-07-26 インターナショナル・レクチファイヤー・コーポレーション Ｉｉｉ族窒化物電流制御デバイスおよび製造方法
US7799456B2 (en) 2005-05-16 2010-09-21 Samsung Sdi Co., Ltd. Rechargeable battery with electrolyte injection opening sealing member
CN106910770A (zh) * 2017-03-03 2017-06-30 上海新傲科技股份有限公司 氮化镓基反相器芯片及其形成方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0258530A3 (de) * 1986-09-01 1990-04-25 Licentia Patent-Verwaltungs-GmbH Photoempfänger
JP2007520884A (ja) * 2004-01-23 2007-07-26 インターナショナル・レクチファイヤー・コーポレーション Ｉｉｉ族窒化物電流制御デバイスおよび製造方法
US7799456B2 (en) 2005-05-16 2010-09-21 Samsung Sdi Co., Ltd. Rechargeable battery with electrolyte injection opening sealing member
CN106910770A (zh) * 2017-03-03 2017-06-30 上海新傲科技股份有限公司 氮化镓基反相器芯片及其形成方法

Also Published As

Publication number Publication date
JPS6357946B2 (enrdf_load_stackoverflow) 1988-11-14

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