JPS58147024A - ラテラルエピタキシヤル成長法 - Google Patents
ラテラルエピタキシヤル成長法Info
- Publication number
- JPS58147024A JPS58147024A JP57028419A JP2841982A JPS58147024A JP S58147024 A JPS58147024 A JP S58147024A JP 57028419 A JP57028419 A JP 57028419A JP 2841982 A JP2841982 A JP 2841982A JP S58147024 A JPS58147024 A JP S58147024A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- heated
- substrate
- region
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Optics & Photonics (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57028419A JPS58147024A (ja) | 1982-02-24 | 1982-02-24 | ラテラルエピタキシヤル成長法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57028419A JPS58147024A (ja) | 1982-02-24 | 1982-02-24 | ラテラルエピタキシヤル成長法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58147024A true JPS58147024A (ja) | 1983-09-01 |
JPH0419698B2 JPH0419698B2 (ru) | 1992-03-31 |
Family
ID=12248131
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57028419A Granted JPS58147024A (ja) | 1982-02-24 | 1982-02-24 | ラテラルエピタキシヤル成長法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58147024A (ru) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6076117A (ja) * | 1983-09-30 | 1985-04-30 | Sony Corp | 半導体薄膜の結晶化方法 |
JPS61136219A (ja) * | 1984-12-06 | 1986-06-24 | Seiko Epson Corp | 単結晶シリコン膜の形成方法 |
JPS62299011A (ja) * | 1986-06-18 | 1987-12-26 | Matsushita Electric Ind Co Ltd | 多結晶薄膜基板のアニ−ル方法 |
US4749438A (en) * | 1986-01-06 | 1988-06-07 | Bleil Carl E | Method and apparatus for zone recrystallization |
US4775443A (en) * | 1986-02-06 | 1988-10-04 | Bleil Carl E | Method and apparatus for zone regrowth of crystal ribbons from bulk material |
US4873063A (en) * | 1986-01-06 | 1989-10-10 | Bleil Carl E | Apparatus for zone regrowth of crystal ribbons |
JP2006032982A (ja) * | 2005-09-02 | 2006-02-02 | Semiconductor Energy Lab Co Ltd | 薄膜の加熱処理方法 |
US7214574B2 (en) | 1997-03-11 | 2007-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Heating treatment device, heating treatment method and fabrication method of semiconductor device |
US7300826B2 (en) | 1997-02-10 | 2007-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor and manufacturing method of semiconductor device |
GB2593950A (en) * | 2020-04-08 | 2021-10-13 | Corning Inc | Solid state conversion of polycrystalline material |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56142630A (en) * | 1980-04-09 | 1981-11-07 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1982
- 1982-02-24 JP JP57028419A patent/JPS58147024A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56142630A (en) * | 1980-04-09 | 1981-11-07 | Fujitsu Ltd | Manufacture of semiconductor device |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6076117A (ja) * | 1983-09-30 | 1985-04-30 | Sony Corp | 半導体薄膜の結晶化方法 |
JPS61136219A (ja) * | 1984-12-06 | 1986-06-24 | Seiko Epson Corp | 単結晶シリコン膜の形成方法 |
US4749438A (en) * | 1986-01-06 | 1988-06-07 | Bleil Carl E | Method and apparatus for zone recrystallization |
US4873063A (en) * | 1986-01-06 | 1989-10-10 | Bleil Carl E | Apparatus for zone regrowth of crystal ribbons |
US4775443A (en) * | 1986-02-06 | 1988-10-04 | Bleil Carl E | Method and apparatus for zone regrowth of crystal ribbons from bulk material |
JPS62299011A (ja) * | 1986-06-18 | 1987-12-26 | Matsushita Electric Ind Co Ltd | 多結晶薄膜基板のアニ−ル方法 |
US7300826B2 (en) | 1997-02-10 | 2007-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor and manufacturing method of semiconductor device |
US7214574B2 (en) | 1997-03-11 | 2007-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Heating treatment device, heating treatment method and fabrication method of semiconductor device |
US7410850B2 (en) | 1997-03-11 | 2008-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Heating treatment device, heating treatment method and fabrication method of semiconductor device |
JP2006032982A (ja) * | 2005-09-02 | 2006-02-02 | Semiconductor Energy Lab Co Ltd | 薄膜の加熱処理方法 |
GB2593950A (en) * | 2020-04-08 | 2021-10-13 | Corning Inc | Solid state conversion of polycrystalline material |
US11584656B2 (en) | 2020-04-08 | 2023-02-21 | Corning Incorporated | Solid state conversion of polycrystalline material |
Also Published As
Publication number | Publication date |
---|---|
JPH0419698B2 (ru) | 1992-03-31 |
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