JPS5814524A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5814524A
JPS5814524A JP11186681A JP11186681A JPS5814524A JP S5814524 A JPS5814524 A JP S5814524A JP 11186681 A JP11186681 A JP 11186681A JP 11186681 A JP11186681 A JP 11186681A JP S5814524 A JPS5814524 A JP S5814524A
Authority
JP
Japan
Prior art keywords
single crystal
region
film
hole
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11186681A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6339092B2 (enrdf_load_stackoverflow
Inventor
Junji Sakurai
桜井　潤治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11186681A priority Critical patent/JPS5814524A/ja
Publication of JPS5814524A publication Critical patent/JPS5814524A/ja
Publication of JPS6339092B2 publication Critical patent/JPS6339092B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP11186681A 1981-07-17 1981-07-17 半導体装置の製造方法 Granted JPS5814524A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11186681A JPS5814524A (ja) 1981-07-17 1981-07-17 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11186681A JPS5814524A (ja) 1981-07-17 1981-07-17 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5814524A true JPS5814524A (ja) 1983-01-27
JPS6339092B2 JPS6339092B2 (enrdf_load_stackoverflow) 1988-08-03

Family

ID=14572123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11186681A Granted JPS5814524A (ja) 1981-07-17 1981-07-17 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5814524A (enrdf_load_stackoverflow)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147424A (ja) * 1983-02-10 1984-08-23 Seiko Instr & Electronics Ltd 半導体結晶膜の形成方法
JPS59158515A (ja) * 1983-02-28 1984-09-08 Fujitsu Ltd 半導体装置の製造方法
JPS59163818A (ja) * 1983-03-09 1984-09-14 Seiko Instr & Electronics Ltd 薄膜半導体装置の製造方法
JPS59194423A (ja) * 1983-04-20 1984-11-05 Agency Of Ind Science & Technol 半導体結晶層の製造方法
JPS6083322A (ja) * 1983-10-13 1985-05-11 Sony Corp 半導体薄膜の結晶化方法
JPS60147111A (ja) * 1984-01-12 1985-08-03 Agency Of Ind Science & Technol 半導体装置の製造方法
FR2560436A1 (fr) * 1984-01-17 1985-08-30 Mitsubishi Electric Corp Procede de fabrication d'un dispositif a semi-conducteur comportant un film monocristallin sur un isolant
JPS6130024A (ja) * 1984-07-21 1986-02-12 Agency Of Ind Science & Technol Ｓｏｉ形成方法
JPS6130025A (ja) * 1984-07-21 1986-02-12 Agency Of Ind Science & Technol 単結晶半導体薄膜の製造方法
JPS6130022A (ja) * 1984-07-21 1986-02-12 Agency Of Ind Science & Technol Ｓｏｉ形成方法
JPS6130023A (ja) * 1984-07-21 1986-02-12 Agency Of Ind Science & Technol Ｓｏｉ形成方法
JPS6149412A (ja) * 1984-08-17 1986-03-11 Fujitsu Ltd シリコン膜の単結晶化方法
JPS61135110A (ja) * 1984-12-05 1986-06-23 Fujitsu Ltd 半導体装置の製造方法
JPS61251113A (ja) * 1985-04-30 1986-11-08 Fujitsu Ltd 非単結晶層の単結晶化方法
JPS62250630A (ja) * 1986-04-24 1987-10-31 Agency Of Ind Science & Technol 半導体装置の製造方法
US5077233A (en) * 1984-10-09 1991-12-31 Fujitsu Limited Method for recrystallizing specified portions of a non-crystalline semiconductor material to fabricate a semiconductor device therein
US5930608A (en) * 1992-02-21 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor in which the channel region of the transistor consists of two portions of differing crystallinity
US6323069B1 (en) 1992-03-25 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using light irradiation to form impurity regions
US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
US6458200B1 (en) * 1990-06-01 2002-10-01 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin-film transistor
US6500703B1 (en) 1993-08-12 2002-12-31 Semicondcutor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147424A (ja) * 1983-02-10 1984-08-23 Seiko Instr & Electronics Ltd 半導体結晶膜の形成方法
JPS59158515A (ja) * 1983-02-28 1984-09-08 Fujitsu Ltd 半導体装置の製造方法
JPS59163818A (ja) * 1983-03-09 1984-09-14 Seiko Instr & Electronics Ltd 薄膜半導体装置の製造方法
JPS59194423A (ja) * 1983-04-20 1984-11-05 Agency Of Ind Science & Technol 半導体結晶層の製造方法
JPS6083322A (ja) * 1983-10-13 1985-05-11 Sony Corp 半導体薄膜の結晶化方法
JPS60147111A (ja) * 1984-01-12 1985-08-03 Agency Of Ind Science & Technol 半導体装置の製造方法
FR2560436A1 (fr) * 1984-01-17 1985-08-30 Mitsubishi Electric Corp Procede de fabrication d'un dispositif a semi-conducteur comportant un film monocristallin sur un isolant
JPS6130024A (ja) * 1984-07-21 1986-02-12 Agency Of Ind Science & Technol Ｓｏｉ形成方法
JPS6130025A (ja) * 1984-07-21 1986-02-12 Agency Of Ind Science & Technol 単結晶半導体薄膜の製造方法
JPS6130022A (ja) * 1984-07-21 1986-02-12 Agency Of Ind Science & Technol Ｓｏｉ形成方法
JPS6130023A (ja) * 1984-07-21 1986-02-12 Agency Of Ind Science & Technol Ｓｏｉ形成方法
JPS6149412A (ja) * 1984-08-17 1986-03-11 Fujitsu Ltd シリコン膜の単結晶化方法
US5077233A (en) * 1984-10-09 1991-12-31 Fujitsu Limited Method for recrystallizing specified portions of a non-crystalline semiconductor material to fabricate a semiconductor device therein
JPS61135110A (ja) * 1984-12-05 1986-06-23 Fujitsu Ltd 半導体装置の製造方法
JPS61251113A (ja) * 1985-04-30 1986-11-08 Fujitsu Ltd 非単結晶層の単結晶化方法
JPS62250630A (ja) * 1986-04-24 1987-10-31 Agency Of Ind Science & Technol 半導体装置の製造方法
US6458200B1 (en) * 1990-06-01 2002-10-01 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin-film transistor
US7018874B2 (en) 1990-06-01 2006-03-28 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin-film transistor
US6740547B2 (en) 1990-06-01 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin-film transistor
US6352883B1 (en) 1991-02-22 2002-03-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6717180B2 (en) 1991-02-22 2004-04-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US5930608A (en) * 1992-02-21 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor in which the channel region of the transistor consists of two portions of differing crystallinity
US6569724B2 (en) 1992-03-25 2003-05-27 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and method for forming the same
US6887746B2 (en) 1992-03-25 2005-05-03 Semiconductor Energy Lab Insulated gate field effect transistor and method for forming the same
US6323069B1 (en) 1992-03-25 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using light irradiation to form impurity regions
US6437366B1 (en) 1993-08-12 2002-08-20 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
US6500703B1 (en) 1993-08-12 2002-12-31 Semicondcutor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
US7381598B2 (en) 1993-08-12 2008-06-03 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same

Also Published As

Publication number Publication date
JPS6339092B2 (enrdf_load_stackoverflow) 1988-08-03

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