JPS58139449A - Multilayer integrated circuit with vertical signal wirings - Google Patents
Multilayer integrated circuit with vertical signal wiringsInfo
- Publication number
- JPS58139449A JPS58139449A JP57022361A JP2236182A JPS58139449A JP S58139449 A JPS58139449 A JP S58139449A JP 57022361 A JP57022361 A JP 57022361A JP 2236182 A JP2236182 A JP 2236182A JP S58139449 A JPS58139449 A JP S58139449A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- wirings
- wiring
- multilayer
- interlayer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
(a)発明の技術分野
本発明は多層集積回路の眉間配線の配置に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to the arrangement of glabellar wiring in a multilayer integrated circuit.
(b)技術の背景
最近のs11回路技術に於ける集積量の増加は著しく、
一平面内に形成した集積回路では、集積密度を如何に高
めても、収容し切れない状況が現実のものとなりつつあ
る。(b) Technical background The recent increase in the amount of integration in S11 circuit technology has been remarkable.
It is becoming a reality that integrated circuits formed in one plane cannot be accommodated no matter how high the integration density is.
かかる状況に対処するものとして、多層集積回路が考え
られている。これは、集積回路を形成した半導体層を複
数枚積層し、眉間配線によって各層の回路を接続して、
更に大規模の集積回路を実現しようとするものであるが
、一平面型の大規模集積回路(以下LSIと略記)とし
て構成可能なものでも、多層構成を採ることにより、信
号線をより短くし得る等の利点を生ずることがある。Multilayer integrated circuits are being considered as a solution to this situation. This is done by stacking multiple semiconductor layers that form an integrated circuit, and connecting the circuits of each layer with glabellar wiring.
The aim is to realize even larger-scale integrated circuits, but even in circuits that can be configured as single-plane large-scale integrated circuits (hereinafter abbreviated as LSI), signal lines can be made shorter by adopting a multilayer configuration. There may be benefits such as gains.
多層LSIを実現するのに必要な技術の一つに、SOI
技術があるが、これは例えば、二酸化珪素上に非単結晶
シリコン層を被着し、これを単結晶化することによって
、絶縁物上に半導体層を形成する技術である。該技術の
進歩によって、既に集積回路の形成された半導体層を絶
縁物層で覆い、その上に新に単結晶半導体層を被着して
、そこに集積回路を形成することが可能となっている。One of the technologies necessary to realize multilayer LSI is SOI.
For example, there is a technique in which a semiconductor layer is formed on an insulator by depositing a non-monocrystalline silicon layer on silicon dioxide and converting it into a single crystal. Advances in this technology have made it possible to cover a semiconductor layer on which an integrated circuit has already been formed with an insulating layer, and then deposit a new single crystal semiconductor layer on top of that to form an integrated circuit there. There is.
多層LSIの設計は、一平面型のLSIの設計に於ける
と同様、機能や規模に従ってブロック化された回路を各
層毎に配置し、層内及び層間配線を行うことになるが、
この配置や配線は電子計算機システムによって行われる
ことになる。電子計算機システムを利用して行う設計を
、以下慣例に従って、CADと呼ぶことにする。In designing a multilayer LSI, as in the design of a single-plane LSI, circuits are arranged in blocks according to function and size in each layer, and wiring is performed within and between layers.
This arrangement and wiring will be performed by an electronic computer system. Design performed using an electronic computer system will hereinafter be referred to as CAD according to convention.
(C)従来技術と問題点
多層LSI技術は、現在開発途上にあり、その設計法と
して慣行化されたものは未だ存在しない。(C) Prior Art and Problems Multilayer LSI technology is currently under development, and there is no standard design method yet.
その規模の大きさからCADに依らざるを得ないが、従
来採られているのは、平面型LSIに使用されていた方
式に従って、各層の集積回路を設計し、層間配線は、必
要の生じたところにバイアホールを設けて行う方式であ
る。Due to its large scale, it has no choice but to rely on CAD, but the conventional approach is to design each layer of integrated circuits according to the method used for planar LSIs, and to design interlayer wiring as necessary. This is a method in which a via hole is provided in the area.
バイアホールを設けるには、層内配線パターンにパッド
を用意する必要があるが、このような方式ではバイアホ
ールの位置が不定である為、配線パターンの設計を複雑
にする。また、一つの層間配線毎に、その上下の層内配
線に一つずつパッドを設けなければならないので配線面
積が増加する。In order to provide a via hole, it is necessary to prepare a pad in the intralayer wiring pattern, but in such a method, the position of the via hole is uncertain, which complicates the design of the wiring pattern. Furthermore, for each interlayer wiring, one pad must be provided for each of the upper and lower intralayer wirings, which increases the wiring area.
この状況を模式的に示したものが第1図である。FIG. 1 schematically shows this situation.
第1図は三層構造の多層LSIを例示したもので、LL
、L2.L3は各層の平面集積回路を表しており、それ
らは複数の回路ブロックlと、それを接続する層内配線
2から成っている。平面集積回路どうしは層間配線3に
よって接続されているが、既述したように、その位置は
不規則である。Figure 1 shows an example of a multilayer LSI with a three-layer structure.
, L2. L3 represents a planar integrated circuit in each layer, which is composed of a plurality of circuit blocks 1 and intralayer wiring 2 that connects them. The planar integrated circuits are connected to each other by interlayer wiring 3, but as described above, the positions thereof are irregular.
層内配線2と層間配線3の接続点4にはバイアホールパ
ッドが設けられる。A via hole pad is provided at a connection point 4 between the intralayer wiring 2 and the interlayer wiring 3.
(d)発明の目的
本発明の目的は、前記層間配線の位置を固定することに
よって、配線設計を容易にするとともに層内配線に占め
るバイアホールバッドの面積を減少せしめることである
。(d) Object of the Invention An object of the present invention is to facilitate wiring design and reduce the area occupied by the via hole pad in the intralayer wiring by fixing the position of the interlayer wiring.
<e>発明の構成
上記の目的を達成する為、本発明の多層LSIは、各層
毎に集積回路が形成されている複数の半導体層と、該複
数の半導体層及び該複数の半導体層を相互に絶縁分離す
る絶縁体層を貫通して、前記各層の集積回路を該半導体
層に垂直な方向に接続する信号線を有し、該信号線は前
記半導体層の総てを、垂直方向にほぼ一直線に貫通する
構造となっている。<e> Structure of the Invention In order to achieve the above object, the multilayer LSI of the present invention includes a plurality of semiconductor layers in which an integrated circuit is formed in each layer, a plurality of semiconductor layers, and a plurality of semiconductor layers that are interconnected. The signal line extends through an insulating layer that is insulated from the semiconductor layer and connects the integrated circuits in each layer in a direction perpendicular to the semiconductor layer, and the signal line connects all of the semiconductor layers in a substantially vertical direction. It has a structure that penetrates in a straight line.
<1>発明の実施例 第2図に本発明の実施例を模式的に示す。<1> Examples of the invention FIG. 2 schematically shows an embodiment of the present invention.
第2図の多層LSIも、第1図と同様L1.L2、L3
の三層の平面集積回路から成っており、各々の平面集積
回路は各種回路プロ・ツクl、層内配線2を有し、層間
配線3′によって相互に接続されている。The multilayer LSI in FIG. 2 also has L1. L2, L3
It consists of three layers of planar integrated circuits, and each planar integrated circuit has various circuit programs 1, intralayer wiring 2, and is interconnected by interlayer wiring 3'.
図より明らかな如く、層間配&m3’は、Ll/L2の
接続とL2/L3の接続とが、水平面内で同じ位置に設
けられており、Ll、、L2、L3をほぼ一直線に接続
している。As is clear from the figure, in the interlayer arrangement &m3', the Ll/L2 connection and the L2/L3 connection are provided at the same position in the horizontal plane, and Ll, , L2, and L3 are connected almost in a straight line. There is.
層闘接繞が必要な配線の主なものには、各種電源線、グ
ラウンド線、データバス等の各種ノイスラインがあり、
総ての層の同種配線が平面的に交差する点が存在する場
合には、その位置にバイアホールバッドを設け、層間配
線を形成すればよいが、そのような点が存在しない場合
は、どの層の配線にも都合のよい点、或いはいずれの層
の配線にも極端な不利の生じない点が選ばれることにな
る。The main types of wiring that require layered connections include various power lines, ground lines, and various noise lines such as data buses.
If there is a point where the same type of wiring in all layers intersects in a plane, it is sufficient to provide a via hole pad at that position and form interlayer wiring, but if such a point does not exist, A point is selected that is convenient for the wiring in the layer, or a point that does not cause any extreme disadvantage to the wiring in any layer.
層間配線の形成には次のような方法が利用できる。一つ
は、通常の多層配線と同様に、下層配線に達するパイプ
ホールを形成した後、上層の配線材料層を被着し、バタ
ーニングする方法であり、いま一つは、下層集積回路を
被覆する層藺絶練層にバイアホールを設け、これを埋め
るように多結晶シリコン層を被着し、単結晶化する方法
である。The following methods can be used to form interlayer wiring. One method is to form a pipe hole that reaches the lower layer wiring, and then apply an upper layer of wiring material and pattern it, similar to normal multilayer wiring.The other method is to cover the lower layer integrated circuit. In this method, a via hole is provided in the layer to be formed, a polycrystalline silicon layer is deposited to fill the via hole, and the polycrystalline silicon layer is formed into a single crystal.
後者ではバイアホール内のシリコンに高濃度の不純物を
ドーピングすることになるが、このドーピングは単結晶
化工程の前後いずれで実施してもよい。In the latter case, the silicon in the via hole is doped with impurities at a high concentration, but this doping may be performed either before or after the single crystallization step.
本発明ではバイアホールバッドは、中間の層に於ては上
方接続と下方接続に共用できるので、その必要数はほぼ
半分になる。従って中間の層が増える程、パッド数の減
少は顕著となる。In the present invention, the via hole pads can be shared for upper and lower connections in the intermediate layer, so the number of via hole pads required is approximately halved. Therefore, as the number of intermediate layers increases, the decrease in the number of pads becomes more significant.
(g)発明の詳細
な説明したように、層間配線の位置を固定しておけば、
多層LSIの設計に於て、CADのソフトウェアの複雑
さが軽減され、更に、ノイイアホールパソド数の減少に
より、配線面積が削減される。(g) As described in the detailed explanation of the invention, if the position of the interlayer wiring is fixed,
In designing a multilayer LSI, the complexity of CAD software is reduced, and the wiring area is also reduced due to the reduction in the number of Neuer Hall paths.
第1図は従来技術による多層LSIを示す図、第2図は
本発明による多層LSIを示す図であって、図に於て、
lは回路ブロック、2は層内配線、3゜3′は層間配線
\、4は層内配線と層間配線の接続点である。
−〜の
」」」FIG. 1 is a diagram showing a multilayer LSI according to the prior art, and FIG. 2 is a diagram showing a multilayer LSI according to the present invention.
1 is a circuit block, 2 is an intralayer wiring, 3°3' is an interlayer wiring, and 4 is a connection point between the intralayer wiring and the interlayer wiring. -'''''
Claims (1)
該複数の半導体層及び該複数の半導体層を相互に絶縁分
離する絶縁体層を貫通して、前記各層の集積回路を該半
導体層に垂直な方向に接続する信号線とを有する多層集
積回路であって、該信号線は前記半導体層の総てを、垂
直方向にほぼ一直線に貫通していることを特徴とする垂
直信号線を有する多層集積回路。a plurality of semiconductor layers in which an integrated circuit is formed in each layer;
A multilayer integrated circuit comprising a plurality of semiconductor layers and a signal line that connects the integrated circuits of each layer in a direction perpendicular to the semiconductor layers by passing through an insulating layer that insulates and separates the plurality of semiconductor layers from each other. A multilayer integrated circuit having a vertical signal line, characterized in that the signal line passes through all of the semiconductor layers in a substantially straight line in the vertical direction.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57022361A JPS58139449A (en) | 1982-02-15 | 1982-02-15 | Multilayer integrated circuit with vertical signal wirings |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57022361A JPS58139449A (en) | 1982-02-15 | 1982-02-15 | Multilayer integrated circuit with vertical signal wirings |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58139449A true JPS58139449A (en) | 1983-08-18 |
Family
ID=12080484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57022361A Pending JPS58139449A (en) | 1982-02-15 | 1982-02-15 | Multilayer integrated circuit with vertical signal wirings |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58139449A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02256264A (en) * | 1988-12-23 | 1990-10-17 | Matsushita Electric Ind Co Ltd | Laminated integrated circuit |
JP2008028407A (en) * | 1997-04-04 | 2008-02-07 | Glenn J Leedy | Information processing method |
JP2008251666A (en) * | 2007-03-29 | 2008-10-16 | Tohoku Univ | Three-dimensional structure semiconductor device |
-
1982
- 1982-02-15 JP JP57022361A patent/JPS58139449A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02256264A (en) * | 1988-12-23 | 1990-10-17 | Matsushita Electric Ind Co Ltd | Laminated integrated circuit |
JP2008028407A (en) * | 1997-04-04 | 2008-02-07 | Glenn J Leedy | Information processing method |
JP2008166831A (en) * | 1997-04-04 | 2008-07-17 | Glenn J Leedy | Method of processing information |
JP2008166832A (en) * | 1997-04-04 | 2008-07-17 | Glenn J Leedy | Information processing method |
JP2008172254A (en) * | 1997-04-04 | 2008-07-24 | Glenn J Leedy | Information processing method |
JP2011181176A (en) * | 1997-04-04 | 2011-09-15 | Glenn J Leedy | Information processing method and laminated integrated circuit memory |
JP2008251666A (en) * | 2007-03-29 | 2008-10-16 | Tohoku Univ | Three-dimensional structure semiconductor device |
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