JPS58139443A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58139443A
JPS58139443A JP57022521A JP2252182A JPS58139443A JP S58139443 A JPS58139443 A JP S58139443A JP 57022521 A JP57022521 A JP 57022521A JP 2252182 A JP2252182 A JP 2252182A JP S58139443 A JPS58139443 A JP S58139443A
Authority
JP
Japan
Prior art keywords
film
substrate
semiconductor substrate
recess
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57022521A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0445980B2 (enrdf_load_stackoverflow
Inventor
Ryozo Nakayama
中山　良三
Akira Kurosawa
黒沢　景
Sunao Shibata
直 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57022521A priority Critical patent/JPS58139443A/ja
Publication of JPS58139443A publication Critical patent/JPS58139443A/ja
Publication of JPH0445980B2 publication Critical patent/JPH0445980B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
  • Local Oxidation Of Silicon (AREA)
JP57022521A 1982-02-15 1982-02-15 半導体装置の製造方法 Granted JPS58139443A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57022521A JPS58139443A (ja) 1982-02-15 1982-02-15 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57022521A JPS58139443A (ja) 1982-02-15 1982-02-15 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58139443A true JPS58139443A (ja) 1983-08-18
JPH0445980B2 JPH0445980B2 (enrdf_load_stackoverflow) 1992-07-28

Family

ID=12085074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57022521A Granted JPS58139443A (ja) 1982-02-15 1982-02-15 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58139443A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11434629B2 (en) 2016-05-28 2022-09-06 Neoperl Gmbh Sanitary insertion unit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54589A (en) * 1977-06-03 1979-01-05 Hitachi Ltd Burying method of insulator

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54589A (en) * 1977-06-03 1979-01-05 Hitachi Ltd Burying method of insulator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11434629B2 (en) 2016-05-28 2022-09-06 Neoperl Gmbh Sanitary insertion unit

Also Published As

Publication number Publication date
JPH0445980B2 (enrdf_load_stackoverflow) 1992-07-28

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